Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Patent Publication Number 20210210680

US 20210210680 A1

Patent NumberUS 12167699 B2

Application Number17208303

Filled DateMar 22, 2021

Priority DateAug 22, 2018

Publication DateJul 8, 2021

Original AssigneeTaiwan Semiconductor Manufacturing Company

Current AssigneeTaiwan Semiconductor Manufacturing Company

Inventor/ApplicantsJodi Mari Iwata
Jian Zhu
Guenole Jan
Huanlong Liu
Yuan-Jen Lee
Ru-Ying Tong

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