Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Patent Application Number 17208303

17208303
Not Appealed
Patent NumberUS 12167699 B2
Publication NumberUS 20210210680 A1
Filled DateMar 22, 2021
Priority DateAug 22, 2018
Inventor/ApplicantsJodi Mari Iwata
Jian Zhu
Guenole Jan
Huanlong Liu
Yuan-Jen Lee
Ru-Ying Tong
ExaminesDIAZ, JOSE R
Art Unit2815
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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