Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Patent Number 12167699

US 12167699 B2
Application Number17208303
Publication NumberUS 20210210680 A1
Pendency3 years, 8 months, 24 days
Filled DateMar 22, 2021
Priority DateAug 22, 2018
Publication DateJul 8, 2021
Expiration DateAug 21, 2038
Inventor/ApplicantsJodi Mari Iwata
Jian Zhu
Guenole Jan
Huanlong Liu
Yuan-Jen Lee
Ru-Ying Tong
ExaminesDIAZ, JOSE R
Art Unit2815
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
Law Firm
You must be logged in to view
Login
Attorneys
Subscription-Only
View Concierge Program
Patent Prosecution report image

Empower your practice with Patexia Publication Prosecution IP Module.

Get access to our exclusive rankings and unlock powerful data.
Check our Latest ReportPurchase IP Module

Looking for a Publication Attorney?

Get in touch with our team or create your account to start exploring a network of over 120K attorneys.