Photoresist composition and method of forming photoresist pattern | Patent Publication Number 20190384170

US 20190384170 A1
Patent NumberUS 11016386 B2
Application Number16163425
Filled DateOct 17, 2018
Priority DateJun 15, 2018
Publication DateDec 19, 2019
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsChin-Hsiang Lin
Ching-Yu Chang
An-Ren Zi
An-Ren ZI
Ching-Yu CHANG
Chin-Hsiang LIN
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