Photoresist composition and method of forming photoresist pattern | Patent Number 11016386

US 11016386 B2
Application Number16163425
Publication NumberUS 20190384170 A1
Pendency2 years, 7 months, 11 days
Filled DateOct 17, 2018
Priority DateJun 15, 2018
Publication DateDec 19, 2019
Expiration DateJun 14, 2038
Inventor/ApplicantsChin-Hsiang Lin
Ching-Yu Chang
An-Ren Zi
An-Ren ZI
Ching-Yu CHANG
Chin-Hsiang LIN
ExaminesDUDA, KATHLEEN
Art Unit1737
Technology Center1700
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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