Gate with self-aligned ledged for enhancement mode GaN transistors | Patent Publication Number 20160035847

US 20160035847 A1

Patent NumberUS 09748347 B2

Application Number14447069

Filled DateJul 30, 2014

Priority DateApr 8, 2009

Publication DateFeb 4, 2016

Original AssigneeEfficient Power Conversion Corporation

Current AssigneeEfficient Power Conversion Corporation

Inventor/ApplicantsJianjun Cao
Alexander Lidow
Alana Nakata

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