Gate with self-aligned ledged for enhancement mode GaN transistors | Patent Number 09748347

US 09748347 B2
Application Number14447069
Publication NumberUS 20160035847 A1
Pendency3 years, 1 month, 1 day
Filled DateJul 30, 2014
Priority DateApr 8, 2009
Publication DateFeb 4, 2016
Expiration DateApr 7, 2029
Inventor/ApplicantsAlana Nakata
Alexander Lidow
Jianjun Cao
ExaminesNIESZ, JAMIE C
Art Unit2822
Technology Center2800
Assignments
Efficient Power Conversion Corporation
Current
Efficient Power Conversion Corporation
Original
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