Through silicon via structure, method of formation, and integration in semiconductor substrate | Patent Number 09147609

US 09147609 B2
Application Number13415744
Publication NumberUS 20130087893 A1
Pendency3 years, 6 months, 25 days
Filled DateMar 8, 2012
Priority DateOct 7, 2011
Publication DateApr 11, 2013
Expiration DateOct 6, 2031
Inventor/ApplicantsDavid J. Howard
Hadi Jebory
ExaminesBACHNER, ROBERT G
Art Unit2898
Technology Center2800
Assignments
Harbour Island Rum Company Inc.
Current
Newport Fab Llc
Original
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