Method for significant reduction of dislocations for a very high A1 composition A1GaN layer | Patent Publication Number 20060264009

US 20060264009 A1

Patent NumberUS 07776636 B2

Application Number11411191

Filled DateApr 25, 2006

Priority DateApr 25, 2005

Publication DateNov 23, 2006

Original AssigneeCao Group

Current AssigneeEpistar

Inventor/ApplicantsTao Wang

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