Method for significant reduction of dislocations for a very high A1 composition A1GaN layer | Patent Number 07776636

US 07776636 B2
Application Number11411191
Publication NumberUS 20060264009 A1
Pendency4 years, 3 months, 25 days
Filled DateApr 25, 2006
Priority DateApr 25, 2005
Publication DateNov 23, 2006
Expiration DateApr 25, 2025
Inventor/ApplicantsTao Wang
ExaminesLEBENTRITT, MICHAEL
Art Unit2829
Technology Center2800
Assignments
Epistar
Current
Cao Group
Original
Law Firm
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