Double-gated transistor circuit | Patent Publication Number 20060060892

US 20060060892 A1

Patent NumberUS 07154135 B2

Application Number11273362

Filled DateNov 14, 2005

Priority DateJul 3, 2003

Publication DateMar 23, 2006

Original AssigneeAmerican Semiconductor Inc.

Current AssigneeAmerican Semiconductor Inc.

Inventor/ApplicantsStephen A. Parke
Douglas R. Hackler
Douglas R. Hackler, Sr.

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