Double-gated transistor circuit | Patent Number 07154135

US 07154135 B2
Application Number11273362
Publication NumberUS 20060060892 A1
Pendency1 year, 1 month, 12 days
Filled DateNov 14, 2005
Priority DateJul 3, 2003
Publication DateMar 23, 2006
Expiration DateJul 3, 2023
Inventor/ApplicantsStephen A. Parke
Douglas R. Hackler
Douglas R. Hackler, Sr.
ExaminesCAO, PHAT X
Art Unit2814
Technology Center2800
Assignments
American Semiconductor Inc.
Current
American Semiconductor Inc.
Original
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