High breakdown voltage semiconductor device | Patent Publication Number 20020100935
US 20020100935 A1Patent NumberUS 06667515 B2
Application Number10053660
Filled DateJan 24, 2002
Priority DateJan 24, 2002
Publication DateAug 1, 2002
Original AssigneeToshiba
Current AssigneeDiodes Incorporated
Inventor/ApplicantsTomoki Inoue
Tomoki Inoue
Tomoki Inoue
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