High breakdown voltage semiconductor device | Patent Number 06667515

US 06667515 B2
Application Number10053660
Publication NumberUS 20020100935 A1
Pendency1 year, 11 months, 3 days
Filled DateJan 24, 2002
Priority DateJan 24, 2002
Publication DateAug 1, 2002
Expiration DateJan 24, 2022
Inventor/ApplicantsTomoki Inoue
Tomoki Inoue
ExaminesNGUYEN, THINH T
Art Unit2818
Technology Center2800
Assignments
Diodes Incorporated
Current
Toshiba
Original
Law Firm
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