FeRAM MFM structure with selective electrode etch | Patent Number 12167611

US 12167611 B2
Application Number18357240
Publication NumberUS 20230371263 A1
Pendency1 year, 4 months, 20 days
Filled DateJul 24, 2023
Priority DateApr 25, 2019
Publication DateNov 16, 2023
Expiration DateApr 24, 2039
Inventor/ApplicantsSheng-Hung Shih
Tzu-Yu Chen
Kuo-Chi Tu
Fu-Chen Chang
Chih-Hsiang Chang
Wen-Ting Chu
ExaminesWARD, ERIC A
Art Unit2891
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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