Gallium Nitride (GaN) has recently been touted as a highly effectively replacement for silicon in high power transistor applications, but... Read More

TriQuint has signed a new R&D agreement with the US Army Research Laboratory (ARL) to explore and fabricate high-frequency, mixed-signal circuits... Read More

Raytheon Company has been awarded an 18-month, $1.8 million contract by the Defense Advanced Research Projects Agency (DARPA) to develop... Read More

In 2009, those knowledgeable about the forefront of semiconductor research would have forecast dramatic growth in the market for gallium... Read More

Kopin Corporation today announced that record results from gallium nitride (GaN)-based high electron mobility transistor (HEMT) materials have been published in... Read More

Two new studies performed at the US Department of Energy’s Argonne National Laboratory have revealed a new pathway for materials... Read More