Word line contact structure for three-dimensional memory devices and fabrication methods thereof | Patent Publication Number 20200258837
US 20200258837 A1Patent NumberUS 11101276 B2
Application Number16865056
Filled DateMay 1, 2020
Priority DateAug 20, 2018
Publication DateAug 13, 2020
Original AssigneeYangtze Memory Technologies Co. Ltd.
Current AssigneeYangtze Memory Technologies Co. Ltd.
Inventor/ApplicantsJun Chen
A Man Zheng
Jifeng ZHU
Xiaowang DAI
Lan Yao
Zhenyu LU
Haohao Yang
Lan YAO
Kun Bao
Li Hong XIAO
Zhenyu Lu
Si Ping Hu
Xiaowang Dai
Li Hong Xiao
Jun CHEN
A Man ZHENG
Kun BAO
Haohao YANG
Jifeng Zhu
Si Ping HU
A Man Zheng
Jifeng ZHU
Xiaowang DAI
Lan Yao
Zhenyu LU
Haohao Yang
Lan YAO
Kun Bao
Li Hong XIAO
Zhenyu Lu
Si Ping Hu
Xiaowang Dai
Li Hong Xiao
Jun CHEN
A Man ZHENG
Kun BAO
Haohao YANG
Jifeng Zhu
Si Ping HU
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