Capping dielectric structures for transistor gates | Patent Publication Number 20160049499

US 20160049499 A1

Patent NumberUS 09490347 B2

Application Number14925741

Filled DateOct 28, 2015

Priority DateSep 30, 2011

Publication DateFeb 18, 2016

Original AssigneeIntel Corporation

Current AssigneeDaedalus Prime Llc

Inventor/ApplicantsDin-How Mei
Sameer S. Pradhan
Aaron W. Rosenbaum

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