Led that has bounding silicon-doped regions on either side of a strain release layer | Patent Publication Number 20140131658
US 20140131658 A1Patent NumberUS 08994064 B2
Application Number14158440
Filled DateJan 17, 2014
Priority DateSep 3, 2011
Publication DateMay 15, 2014
Original AssigneeToshiba
Current AssigneeSamsung Electronics
Inventor/ApplicantsZhen Chen
Yi Fu
Yi Fu
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