Led that has bounding silicon-doped regions on either side of a strain release layer | Patent Publication Number 20140131658

US 20140131658 A1
Patent NumberUS 08994064 B2
Application Number14158440
Filled DateJan 17, 2014
Priority DateSep 3, 2011
Publication DateMay 15, 2014
Original AssigneeToshiba
Current AssigneeSamsung Electronics
Inventor/ApplicantsYi Fu
Zhen Chen
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