Trench gate type semiconductor device and fabricating method of the same | Patent Publication Number 20040041207

US 20040041207 A1
Patent NumberUS 06717210 B2
Application Number10289339
Filled DateNov 7, 2002
Priority DateNov 7, 2002
Publication DateMar 4, 2004
Original AssigneeToshiba
Current AssigneeDiodes Incorporated
Inventor/ApplicantsAkio Takano
Takahiro Kawano
Akio Takano
Takahiro Kawano
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