Semiconductor device having junction-termination structure of resurf type | Patent Publication Number 20030006497
US 20030006497 A1Publication DateJan 9, 2003
Original AssigneeToshiba
Current AssigneeDiodes Incorporated
Inventor/ApplicantsNaoyuki Inoue
Michiaki Hiyoshi
Shigeru Hasegawa
Naoyuki Inoue
Shigeru Hasegawa
Michiaki Hiyoshi
Tatsuo Harada
Tatsuo Harada
Michiaki Hiyoshi
Shigeru Hasegawa
Naoyuki Inoue
Shigeru Hasegawa
Michiaki Hiyoshi
Tatsuo Harada
Tatsuo Harada
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