Circuit and method to enhance efficiency of memory | Patent Number 12167613

US 12167613 B2
Application Number18361897
Publication NumberUS 20230380184 A1
Pendency1 year, 4 months, 14 days
Filled DateJul 30, 2023
Priority DateSep 21, 2018
Publication DateNov 23, 2023
Expiration DateSep 20, 2038
Inventor/ApplicantsHUNG-CHANG YU
Hung-Chang Yu
ExaminesKING, DOUGLAS
Art Unit2824
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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