Memory device and method for fabricating the memory device | Patent Number 12127409

US 12127409 B2
Application Number18339821
Publication NumberUS 20230337430 A1
Pendency1 year, 4 months, 3 days
Filled DateJun 22, 2023
Priority DateDec 11, 2019
Publication DateOct 19, 2023
Expiration DateDec 10, 2039
Inventor/ApplicantsHye-Hyeon BYEON
Jin-Ho BIN
Tae-Hong GWON
Il-Young Kwon
Hye-Hyeon Byeon
Jin-Ho Bin
Il-Young KWON
Tae-Hong Gwon
ExaminesBERNSTEIN, ALLISON
Art Unit2824
Technology Center2800
Assignments
Sk Hynix
Current
Sk HynixSk Group
Original
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