Method of manufacturing a magnetoresistive random access memory (MRAM) | Patent Number 11968909
US 11968909 B2Filled DateJul 7, 2023
Priority DateMar 10, 2005
Publication DateNov 9, 2023
Expiration DateMar 9, 2025
Inventor/ApplicantsShinji Yuasa
Shinji YUASA
Shinji YUASA
ExaminesCHAMBLISS, ALONZO
Art Unit2897
Technology Center2800
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