Enhancement mode GaN HEMT device and method for fabricating the same | Patent Number 08404508

US 08404508 B2
Application Number12756960
Publication NumberUS 20100258843 A1
Pendency2 years, 11 months, 23 days
Filled DateApr 8, 2010
Priority DateApr 8, 2009
Publication DateOct 14, 2010
Expiration DateApr 7, 2029
Inventor/ApplicantsGuang Yuan Zhao
Alana Nakata
Robert Beach
Jianjun Cao
Alexander Lidow
ExaminesLEBENTRITT, MICHAEL
Art Unit2829
Technology Center2800
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