Internal voltage generation circuit of semiconductor memory device | Patent Number 07468928

US 07468928 B2
Application Number11648283
Publication NumberUS 20070183246 A1
Pendency1 year, 12 months
Filled DateDec 29, 2006
Priority DateDec 29, 2006
Publication DateAug 9, 2007
Expiration DateDec 28, 2026
Inventor/ApplicantsSang Jin Byeon
ExaminesPHUNG, ANH K
Art Unit2824
Technology Center2800
Assignments
Sk Hynix
Current
Hynix Semiconductor Inc.Sk Group
Original
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