Method for forming a field effect transistor having a high-k gate dielectric and related structure | Patent Number 06797572

US 06797572 B1
Application Number10618273
Publication Number-
Pendency1 year, 2 months, 20 days
Filled DateJul 11, 2003
Priority DateJul 11, 2003
Publication Date-
Expiration DateJul 11, 2023
Inventor/ApplicantsJoong S Jeon
Huicai Zhong
ExaminesTHAI, DAVIS
Art Unit2827
Technology Center2800
Assignments
Innovative Foundry Technologies Llc
Current
Advanced Micro Devices Inc
Original
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