Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell | Patent Number 06243300
US 06243300 NAFilled DateFeb 16, 2000
Priority DateFeb 16, 2000
Publication Date-
Expiration DateFeb 16, 2020
Inventor/Applicants Ravi S. Sunkavalli
ExaminesLE, THONG QUOC
Art Unit2818
Technology Center2800
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