Method of forming a contact hole in an interlevel dielectric layer using dual etch stops | Patent Number 05912188
US 05912188 NAFilled DateAug 4, 1997
Priority DateAug 4, 1997
Publication Date-
Expiration DateAug 4, 2017
Inventor/Applicants Daniel Kadosh
Mark I. Gardner
Frederick N. Hause
Mark I. Gardner
Frederick N. Hause
ExaminesPOWELL, WILLIAM A
Art Unit1765
Technology Center1700
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