TECHNICAL FIELD

The present disclosure relates to a fluorine-containing polymer.

BACKGROUND ART

Fluorine-containing polymers (fluorine-containing compounds) have continued to be used or developed in a wide range of application fields, mainly in the field of advanced materials, due to the properties of fluorine, such as water repellency, oil repellency, low water absorption, heat resistance, weather resistance, corrosion resistance, transparency, photosensitivity, low refractive index, and low dielectric properties. In particular, when it comes to coating applications, active research and development have been conducted in the fields of antireflection films using low refractive index and transparency of visible light, optical devices using transparency in the high wavelength range (optical communication wavelength band), resist materials using transparency in the ultraviolet region (especially in the vacuum ultraviolet wavelength range), etc. The common polymer design in these application fields is to achieve adhesion to the base material and a high glass transition temperature (hardness) while achieving transparency at the respective operating wavelengths by introducing as many fluorine atoms as possible.

Patent Literature 1 describes as a monomer constituting such a fluorine-containing polymer a polymerizable monomer represented by the following formula (6):

[Image Omitted]

wherein R^1prepresents a hydrogen atom, a halogen atom, or a group selected from the group consisting of a hydrocarbon group and a fluorine-containing alkyl group which is linear or branched and optionally contains a cyclic structure; R^2pis a divalent or trivalent organic group selected from an aliphatic hydrocarbon group which is linear or branched and optionally contains a cyclic structure, an aromatic ring group, or a complex substituent thereof, with a part or all of the hydrogen atoms in the organic group being optionally replaced by a fluorine atom or a hydroxy group; R^3pis a hydrogen atom, a hydrocarbon group, a fluorine-containing alkyl group which is linear or branched and optionally contains a cyclic structure, or an aromatic ring group, the hydrocarbon group or fluorine-containing alkyl group optionally internally containing a divalent linking group selected from an ether group (—O—) or a carbonyl group (—(C═O)—); and m represents an integer of 1 or 2, and when m is 2, two R^3pmay be the same as or different from each other.

The polymerizable monomer of formula (6) is a monomer compound successfully produced to contain a (CF₃)₂(OR^3p)C-moiety derived from hexafluoroacetone and have a high fluorine content while bearing polar groups in the same molecule in a balanced way.

The polymerizable monomer is also excellent in polymerizability. The fluorine-containing polymer obtained by polymerizing the polymerizable monomer is known to combine transparency brought about by the fluorine atoms with adhesion and workability brought about by the polar groups, and show excellent physical properties as antireflection film materials, optical device materials, resist materials, or other materials.

CITATION LIST
Patent Literature

Patent Literature 1: JP 4083399 B

SUMMARY OF INVENTION
Technical Problem

When the fluorine-containing polymer produced from the polymerizable monomer of formula (6) is used as a resist material, the fluorine-containing polymer is dissolved in a solvent to prepare a film-forming solution containing the fluorine-containing polymer.

When the film-forming solution is applied to a base material or a thin film such as a resist film and baked to form a film which is then immersed in a developer, a residue may sometimes be left on the base material.

The present disclosure aims to provide a fluorine-containing polymer for use in a film-forming solution capable of forming a film that is less likely to leave a residue when immersed in a developer.

Solution to Problem

In view of the above problem, the present inventors conducted extensive studies. As a result, the present inventors have found out that the minor reaction product generated during the preparation of the polymerizable monomer causes the above problem, and that the problem may be solved by reducing the amount of the minor reaction product when the polymerizable monomer is polymerized to produce a fluorine-containing polymer. This finding has led to the present disclosure.

Specifically, the present disclosure is as follows.

The fluorine-containing polymer of the present disclosure relates to a fluorine-containing polymer, containing:

- a repeating unit represented by the following formula (1); and
- a repeating unit represented by the following formula (2) in an amount, expressed in parts per million based on a mass of the repeating unit of formula (1), of 1500 ppm or less:

[Image Omitted]

wherein R¹and R²are each independently a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, or a t-butyl group; R³and R⁴are each independently a hydrogen atom, a methyl group, or an ethyl group; R⁵is a hydrogen atom or a trifluoromethyl group; and R⁶is a hydrogen atom, a chlorine atom, a methyl group, or a trifluoromethyl group.

Preferably, in the fluorine-containing polymer of the present disclosure, R⁵is a trifluoromethyl group.

Preferably, in the fluorine-containing polymer of the present disclosure, R³and R⁴are hydrogen atoms.

Preferably, in the fluorine-containing polymer of the present disclosure, R¹is a methyl group or an iso-propyl group, and R²is a hydrogen atom.

Preferably, the fluorine-containing polymer of the present disclosure contains another repeating unit other than the repeating unit of formula (1) and the repeating unit of formula (2).

Preferably, the fluorine-containing polymer of the present disclosure is for use in a film-forming solution.

Advantageous Effects of Invention

The present disclosure can provide a fluorine-containing polymer for use in a film-forming solution capable of forming a film that is less likely to leave a residue when immersed in a developer.

DESCRIPTION OF EMBODIMENTS

The present disclosure is described in detail below, but the description of the constituent elements described below relates to exemplary embodiments of the present disclosure, and the present disclosure is not limited to these specific contents. The present disclosure can be carried out in various modifications within the scope of the gist.

In the section “DESCRIPTION OF EMBODIMENTS” herein, the matters denoted by the brackets “[” and “]” and “<” and “>” are merely symbols and have no meaning per se.

The fluorine-containing polymer of the present disclosure contains a repeating unit represented by the following formula (1), and a repeating unit represented by the following formula (2) in an amount, expressed in parts per million based on the mass of the repeating unit of formula (1), of 1500 ppm or less:

[Image Omitted]

wherein R¹and R²are each independently a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, or a t-butyl group; R³and R⁴are each independently a hydrogen atom, a methyl group, or an ethyl group; R⁵is a hydrogen atom or a trifluoromethyl group; and R⁶is a hydrogen atom, a chlorine atom, a methyl group, or a trifluoromethyl group.

The fluorine-containing polymer of the present disclosure may be used as a resist film or an overlying film for protecting a resist film and/or a resist pattern (hereinafter also referred to simply as “overlying film”). In this case, the fluorine-containing polymer is dissolved in a solvent to prepare a film-forming solution containing the fluorine-containing polymer.

The repeating unit of formula (2) is a repeating unit derived from a fluorine-containing monomer that is synthesized as an unavoidable minor reaction product when the fluorine-containing polymer of the present disclosure is produced.

In the case of a fluorine-containing polymer containing the repeating unit of formula (1) and the repeating unit of formula (2) in which the proportion of the repeating unit of formula (2) is high, when a film-forming solution containing the fluorine-containing polymer is applied to a base material or a thin film such as a resist film and baked to form a film which is then immersed in a developer, a residue is more likely to be left.

In contrast, in the fluorine-containing polymer of the present disclosure, the proportion of the repeating unit of formula (2) is sufficiently low. Thus, when a film-forming solution containing the fluorine-containing polymer of the present disclosure is used to form a film which is then immersed in a developer, the film can dissolve rapidly and is less likely to leave a residue.

Here, the fluorine-containing polymer of the present disclosure contains the repeating unit of formula (2) in an amount, expressed in parts per million based on the mass of the repeating unit of formula (1), of 1500 ppm or less. The amount of the repeating unit of formula (2) is preferably 450 ppm or less, more preferably 200 ppm or less. The amount of the repeating unit of formula (2) is also preferably 10 ppm or more.

In describing the fluorine-containing polymer of the present disclosure, the production method thereof is important. Thus, a method for producing the fluorine-containing polymer of the present disclosure is described in detail.

The method for producing the fluorine-containing polymer of the present disclosure includes a fluorine-containing monomer synthesis step, a fluorine-containing monomer purification step, and a polymerization step. The following describes these steps.

Fluorine-Containing Monomer Synthesis Step

The fluorine-containing monomer synthesis step includes reacting a diol represented by the following formula (3) with at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids (hereinafter also referred to as “any of the unsaturated carboxylic acids and the like”).

Thus, a composition containing a fluorine-containing monomer represented by the following formula (4) as a main reaction product and a fluorine-containing monomer represented by the following formula (5) as a minor reaction product can be obtained.

[Image Omitted]

In the formulas (3), (4), and (5), R¹and R²are each independently a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, or a t-butyl group; R³and R⁴are each independently a hydrogen atom, a methyl group, or an ethyl group; R⁵is a hydrogen atom or a trifluoromethyl group; and R⁶is a hydrogen atom, a chlorine atom, a methyl group, or a trifluoromethyl group.

In the reaction in the fluorine-containing monomer synthesis step, the diol of formula (3) has two alcohol moieties, a fluorine-containing alcohol moiety containing a fluorine atom and an alkyl alcohol moiety containing no fluorine atom, in the same molecule. The fluorine-containing alcohol moiety contains a bulky trifluoromethyl group having electron-withdrawing properties.

It is believed that, owing to the electron-withdrawing properties of the fluorine-containing alcohol moiety and its steric effect, the nucleophilicity of the lone pair of electrons in the alcohol moiety may be reduced, so that an addition reaction of any of the unsaturated carboxylic acids and the like is less likely to occur. Thus, the fluorine-containing monomer of formula (4) can be synthesized as a main reaction product.

Moreover, the fluorine-containing monomer of formula (4) contains a residual fluorine-containing alcohol moiety. At this fluorine-containing alcohol moiety, an addition reaction of any of the unsaturated carboxylic acids and the like can slightly occur. Thus, in the synthesis of the fluorine-containing monomer of formula (4), the fluorine-containing monomer of formula (5) as an unavoidable minor reaction product will be synthesized.

As a result, the composition obtained in the fluorine-containing monomer synthesis step contains the fluorine-containing monomer of formula (4) as a main reaction product and the fluorine-containing monomer of formula (5) as a minor reaction product.

Moreover, in the fluorine-containing monomer synthesis step, any of the unsaturated carboxylic acids and the like may be further added to the site where any of the unsaturated carboxylic acids and the like is added in the fluorine-containing monomer of formula (4), to synthesize a fluorine-containing monomer represented by the following formula (7).

The composition obtained in the fluorine-containing monomer synthesis step may contain the fluorine-containing monomer of formula (7):

[Image Omitted]

wherein R¹and R²are each independently a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, or a t-butyl group; R³and R⁴are each independently a hydrogen atom, a methyl group, or an ethyl group; R⁵is a hydrogen atom or a trifluoromethyl group; and R⁶is a hydrogen atom, a chlorine atom, a methyl group, or a trifluoromethyl group.

Here, the fluorine-containing polymer of the present disclosure may contain a repeating unit derived from the monomer of formula (7).

As described above, the fluorine-containing alcohol moiety containing a fluorine atom in the diol of formula (3) is less likely to undergo an addition reaction of any of the unsaturated carboxylic acids and the like. Thus, compounds in which only the fluorine-containing alcohol moiety containing a fluorine atom has undergone an addition reaction of any of the unsaturated carboxylic acids and the like are hardly produced. Moreover, even if such a compound is produced, the highly reactive alkyl alcohol moiety containing no fluorine atom will immediately undergo an addition reaction of any of the unsaturated carboxylic acids and the like to synthesize the fluorine-containing monomer of formula (5).

Thus, compounds in which only the fluorine-containing alcohol moiety containing a fluorine atom in the diol of formula (3) has undergone an addition reaction of any of the unsaturated carboxylic acids and the like are hardly detected in the composition obtained in the fluorine-containing monomer synthesis step.

From the standpoint of easy availability, in the diol of formula (3), R¹is preferably a methyl group or an iso-propyl group, R²to R⁴are preferably hydrogen atoms, and R⁵is preferably a trifluoromethyl group.

In the repeating unit of formula (1) and the repeating unit of formula (2) in the fluorine-containing polymer of the present disclosure produced with such a diol of formula (3), R¹is a methyl group or an iso-propyl group, R²to R⁴are hydrogen atoms, and R⁵is a trifluoromethyl group.

Examples of the at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids used in the fluorine-containing monomer synthesis step include methacrylating agents, acrylating agents, and other esterifying agents.

Examples of methacrylating agents that may be used in the fluorine-containing monomer synthesis step include methacrylic acid esters such as methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, iso-propyl methacrylate, n-butyl methacrylate, iso-butyl methacrylate, sec-butyl methacrylate, and tert-butyl methacrylate; acid halides such as methacrylic acid chloride, methacrylic acid fluoride, and methacrylic acid bromide; methacrylic anhydride; and methacrylic acid.

Examples of acrylating agents that may be used in the fluorine-containing monomer synthesis step include acrylic acid esters such as methyl acrylate, ethyl acrylate, n-propyl acrylate, iso-propyl acrylate, n-butyl acrylate, iso-butyl acrylate, sec-butyl acrylate, and tert-butyl acrylate; acid halides such as acrylic acid chloride, acrylic acid fluoride, and acrylic acid bromide; acrylic anhydride; and acrylic acid.

Examples of esterifying agents that may be used in the fluorine-containing monomer synthesis step include carboxylic acid esters, acid halides such as carboxylic acid chlorides, carboxylic acid anhydrides, and carboxylic acids, which do not fall into the above-mentioned methacrylating agents and acrylating agents.

Methacrylating agents are preferred among these, with methacrylic anhydride and/or methacrylic acid chloride being more preferred.

In the fluorine-containing monomer synthesis step, when the diol of formula (3) is reacted with at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids, an acid or a base may be added as needed.

In the fluorine-containing monomer synthesis step, when the diol of formula (3) is reacted with at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids, the reaction is preferably performed at 30 to 130° C. for 0.5 to 8 hours.

In the fluorine-containing monomer synthesis step, the amount of the fluorine-containing monomer of formula (5) produced as a minor reaction product may vary depending on the type of any of the unsaturated carboxylic acids and the like, the reaction temperature, and the reaction time.

If the amount of any of the unsaturated carboxylic acids and the like used is too small, the amount of the fluorine-containing monomer of formula (5) produced can be reduced, but a large amount of the unreacted diol of formula (3) may remain. Then, it is necessary to separate the fluorine-containing monomer of formula (4) from the diol of formula (3).

Also, if the amount of any of the unsaturated carboxylic acids and the like used is too large, the amount of the fluorine-containing monomer of formula (5) produced can be increased. In addition, homopolymers of any of the unsaturated carboxylic acids and the like may be produced.

For these reasons, the molar ratio of the diol of formula (3) to the at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids used is preferably such that [the molar amount of the diol of formula (3) used]:[the molar amount of the at least one selected from the group consisting of unsaturated carboxylic acids, esters of the unsaturated carboxylic acids, acid halides of the unsaturated carboxylic acids, and anhydrides of the unsaturated carboxylic acids]=1:0.7 to 1:1.3.

Examples of compounds preferred as the fluorine-containing monomer of formula (4) obtained in the fluorine-containing monomer synthesis step include 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate, which is a fluorine-containing monomer represented by the following formula (4-1), and 1,1,1-trifluoro-2-hydroxy-2-trifluoromethylheptan-4-yl methacrylate, which is a fluorine-containing monomer represented by the following formula (4-2).

[Image Omitted]

Fluorine-Containing Monomer Purification Step

The fluorine-containing monomer purification step includes removing the fluorine-containing monomer of formula (5) from the composition obtained in the fluorine-containing monomer synthesis step to adjust the amount of the fluorine-containing monomer of formula (5), expressed in parts per million based on the mass of the fluorine-containing monomer of formula (4), to 1500 ppm or less.

Moreover, the amount of the fluorine-containing monomer of formula (5) is preferably 450 ppm or less, more preferably 200 ppm or less. The amount of the fluorine-containing monomer of formula (5) is also preferably 10 ppm or more.

This step can adjust the amount of the repeating unit of formula (2) in the fluorine-containing monomer of the present disclosure to be produced, expressed in parts per million based on the mass of the repeating unit of formula (1), to 1500 ppm or less.

The fluorine-containing monomer of formula (5) may be removed from the composition by any method such as column chromatography, precision distillation, crystallization, or other known methods. These methods may be combined in order to obtain the fluorine-containing monomer of formula (4) with high purity.

Each method is described in detail below.

(Column Chromatography)

A typical cylindrical base material for a column is filled with a filler, and the composition is passed therethrough with an organic solvent as a mobile phase to remove the fluorine-containing monomer of formula (5) from the composition.

The filler is preferably silica gel or alumina gel, more preferably alumina gel, but is not limited thereto. The filler may include one filler or two or more fillers.

The mobile phase may be a common organic solvent such as hexane, heptane, toluene, or ethyl acetate, but is not limited thereto. Moreover, the mobile phase may include one solvent or two or more solvents.

The column chromatography is preferably performed in the temperature range of 0° C. to 40° C., more preferably in the temperature range of 20° C. to 30° C.

Increasing the amount (height) of the added filler requires longer time, but improves the degree of separation. When the cylindrical base material for a column used is ILC-B22-300 (model number) available from Kiriyama Glass Works Co., the height of the filler is desirably 5 cm to 15 cm.

(Precision Distillation)

When the fluorine-containing monomer of formula (5) is removed from the composition by precision distillation, the number of theoretical stages of the distillation column is required to be at least 5 but not more than 40.

If the number of theoretical stages is less than 5, it is difficult to sufficiently remove the fluorine-containing monomer of formula (5). The larger the number of stages of the distillation column, the higher the ability to separate and remove the fluorine-containing monomer of formula (5). If the number of stages is more than 40, the ability to separate and remove approaches the upper limit, and the cost effectiveness is less likely to be improved.

Moreover, the fluorine-containing monomer of formula (4) may undergo a polymerization reaction during the precision distillation. Such a polymerization reaction may be prevented by adding a polymerization inhibitor to the composition.

Moreover, oxygen may be introduced into the distillation column.

Non-limiting examples of the polymerization inhibitor include o-cresol, m-cresol, p-cresol, 6-t-butyl-2,4-xylenol, 2,6-di-t-butyl-p-cresol, hydroquinone, catechol, 4-t-butylpyrocatechol, 2,5-bistetramethylbutylhydroquinone, 2,5-di-t-butylhydroquinone, p-methoxyphenol, 1,2,4-trihydroxybenzene, 1,2-benzoquinone, 1,3-benzoquinone, 1,4-benzoquinone, leucoquinizarin, phenothiazine, 2-methoxyphenothiazine, tetraethylthiuram disulfide, 1,1-diphenyl-2-picrylhydrazyl, and 1,1-diphenyl-2-picrylhydrazine.

Examples of commercially available polymerization inhibitors include products available from Seiko Chemical Co., Ltd. such as N,N′-di-2-naphthyl-p-phenylenediamine (trade name, Nonflex F), N,N-diphenyl-p-phenylenediamine (trade name, Nonflex H), 4,4′-bis(a,a-dimethylbenzyl)diphenylamine (trade name, Nonflex DCD), 2,2′-methylene-bis(4-methyl-6-tert-butylphenol) (trade name, Nonflex MBP), and N-(1-methylheptyl)-N′-phenyl-p-phenylenediamine (trade name, Ozonone 35), and products available from Wako Pure Chemical Industries, Ltd. such as ammonium N-nitrosophenylhydroxyamine (trade name, Q-1300) and an N-nitrosophenylhydroxyamine aluminum salt (trade name, Q-1301).

Any amount of the polymerization inhibitor may be used in the precision distillation. The amount of the polymerization inhibitor is preferably at least 0.01 parts by mass but not more than 5 parts by mass, more preferably at least 0.01 parts by mass but not more than 1 part by mass per 100 parts by mass of the fluorine-containing monomer of formula (4) when measured before the precision distillation.

If the amount of the polymerization inhibitor is less than 0.01 parts by mass per 100 parts by mass of the fluorine-containing monomer of formula (4), it is difficult to prevent the polymerization of the fluorine-containing monomer of formula (4).

If the amount of the polymerization inhibitor is more than 5 parts by mass per 100 parts by mass of the fluorine-containing monomer of formula (4), the effect of preventing the polymerization of the fluorine-containing monomer of formula (4) approaches the upper limit, and the cost effectiveness is less likely to be improved.

Here, the amount of the fluorine-containing monomer of formula (4) in the composition can be measured by gas chromatography.

(Crystallization)

The fluorine-containing monomer of formula (5) can be removed from the composition by crystallization.

The crystallization is an operation which can cause precipitation and crystal growth of the fluorine-containing monomer of formula (4) by dissolving the composition in a good solvent and adding a poor solvent or lowering the temperature.

The type of solvent used in the crystallization is not limited as long as the fluorine-containing monomer of formula (4) is readily soluble or insoluble in the solvent. Examples include alcohols, nitriles, ketones, amides, sulfoxides, ethers, hydrofluorocarbons, hydrofluoroethers, hydrocarbons, aromatic hydrocarbons, and water.

Examples of the alcohols include methanol, ethanol, n-propanol, isopropanol, ethylene glycol, and propylene glycol.

Examples of the nitriles include acetonitrile and benzonitrile.

Examples of the ketones include acetone, methyl ethyl ketone, diethyl ketone, methyl n-propyl ketone, methyl iso-propyl ketone, methyl n-butyl ketone, and methyl iso-butyl ketone.

Examples of the amides include N,N-dimethylformamide, N,N-dimethylacetamide, and N,N-dimethylimidazolidinone.

Examples of the sulfoxides include dimethyl sulfoxide.

Examples of the ethers include diethyl ether, methyl t-butyl ether, diisopropyl ether, dibutyl ether, and tetrahydrofuran.

Examples of the hydrofluorocarbons include trifluoromethane, difluoromethane, 1,1,1,2-tetrafluoroethane, 1,1,1-tetrafluoroethane, 1,1-difluoroethane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,3,3,3-hexafluoropropane, 1,1,1,3,3-heptafluoropropane, 1,1,1,3,3-pentafluorobutane, 1,1,1,2,2,3,4,5,5,5-decafluoropentane, and 1,1,2,2,3,3,4-heptafluorocyclopentane.

Examples of the hydrofluoroethers include methyl 1,1,2,2,2-pentafluoroethyl ether, methyl trifluoromethyl ether, methyl 1,1,2,2-tetrafluoroethyl ether, 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane, (2,2,3,3-tetrafluoropropyl) (1,1,2,3,3,3-hexafluoropropyl) ether, (methyl) (nonafluorobutyl) ether, (methyl) (nonafluoroisobutyl) ether, (ethyl) (nonafluorobutyl) ether, (ethyl) (nonafluoroisobutyl) ether, 1,1,1,2,2,3,4,5,5,5-decafluoro-3-methoxy-4-(trifluoromethyl)pentane, 2-trifluoromethyl-3-ethoxy-dodecafluorohexane, and 1,1,1,2,3-hexafluoro-4-(1,1,2,3,3,3-hexafluoropropoxy)pentane.

Examples of the hydrocarbons include butane, pentane, hexane, heptane, octane, nonane, and decane.

Examples of the aromatic hydrocarbons include benzene, toluene, xylene, mesitylene, and perfluorobenzene.

At least one compound selected from these solvents is preferably used as a good solvent or a poor solvent.

The amount of the solvent used in the crystallization is preferably at least 50 parts by mass but not more than 2000 parts by mass, more preferably at least 100 parts by mass but not more than 1000 parts by mass per 100 parts by mass of the fluorine-containing monomer of formula (4) when measured before the crystallization.

If the amount of the solvent is less than 50 parts by mass per 100 parts by mass of the fluorine-containing monomer of formula (4), it is difficult to stir and mix a slurry of the fluorine-containing monomer of formula (4) precipitated by crystallization.

Even if 100 parts by mass of the fluorine-containing monomer of formula (4) is dissolved by adding more than 2000 parts by mass of the solvent, the efficiency of removing impurities approaches the upper limit, and the cost effectiveness is less likely to be improved.

Here, the amount of the fluorine-containing monomer of formula (4) in the composition can be measured by gas chromatography.

Polymerization Step

The polymerization step includes polymerizing the fluorine-containing monomer of formula (4) from the composition obtained after the fluorine-containing monomer purification step to give a fluorine-containing polymer containing the repeating unit of formula (1).

Here, as the composition obtained after the fluorine-containing monomer purification step contains the fluorine-containing monomer of formula (5) that has not been completely removed therefrom, this fluorine-containing monomer of formula (5) will also be polymerized. Therefore, the resulting fluorine-containing polymer of the present disclosure contains the repeating unit of formula (2).

Here, any of the unsaturated carboxylic acids and the like added to the fluorine-containing alcohol moiety containing a fluorine atom in the fluorine-containing monomer of formula (5) may be polymerized in the polymerization step.

Thus, the resulting fluorine-containing polymer of the present disclosure may contain a repeating unit represented by the following formula (8):

[Image Omitted]

wherein R¹and R²are each independently a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, or a t-butyl group; R³and R⁴are each independently a hydrogen atom, a methyl group, or an ethyl group; R⁵is a hydrogen atom or a trifluoromethyl group; and R⁶is a hydrogen atom, a chlorine atom, a methyl group, or a trifluoromethyl group.

Moreover, any of the unsaturated carboxylic acids and the like added to the alkyl alcohol moiety containing no fluorine atom and any of the unsaturated carboxylic acids and the like added to the fluorine-containing alcohol moiety containing a fluorine atom in the fluorine-containing monomer of formula (5) may be both polymerized in the polymerization step.

Thus, the fluorine-containing polymer of the present disclosure may contain such a repeating unit.

In the polymerization step, another monomer other than the fluorine-containing monomer of formula (4) and the fluorine-containing monomer of formula (5) may be added to the composition obtained after the fluorine-containing monomer purification step, and a polymerization reaction of this composition may be performed.

In this case, the resulting fluorine-containing polymer of the present disclosure contains a repeating unit derived from the another monomer. In other words, the fluorine-containing polymer of the present disclosure may contain another repeating unit other than the repeating unit of formula (1) and the repeating unit of formula (2).

Examples of the another monomer other than the fluorine-containing monomer of formula (4) and the fluorine-containing monomer of formula (5) include the following monomers:

- monomers having a hexafluoroisopropanol group (—C(CF₃)₂OH), acrylic acid esters, methacrylic acid esters, fluorine-containing acrylic acid esters, fluorine-containing methacrylic acid esters, styrenes, fluorine-containing styrenes, vinyl ethers, fluorine-containing vinyl ethers, allyl ethers, fluorine-containing allyl ethers, unsaturated amides, olefins, fluorine-containing olefins, norbornene compounds, fluorine-containing norbornene compounds, vinylsilanes, vinylsulfonic acid or vinylsulfonic acid esters, acrylic acid, methacrylic acid, maleic acid, maleic anhydride, fumaric acid, and sulfur dioxide.

The another monomer used may also be a monomer containing an acid-decomposable group.

When a fluorine-containing polymer is produced with a monomer containing an acid-decomposable group and used as a resist, the resist film formed on a base material can be exposed to high-energy rays such as an electron beam or an electromagnetic wave with a wavelength of 300 nm or less to generate an acid in the resist film due to decomposition of the acid-decomposable group.

This acid may improve the solubility of the exposed area of the resist film in an alkaline developer in development.

The another monomer used may also be a monomer having a lactone structure.

When a fluorine-containing copolymer is produced with a monomer having a lactone structure and used as a resist, the adhesion between the resist film containing the fluorine-containing copolymer and a base material can be improved. Further, when the fluorine-containing copolymer is used to form an overlying film on a resist pattern, not only can the adhesion to the underlying resist pattern be improved, but also the affinity with a developer in development can be increased and a high-resolution resist pattern can be obtained.

One such another monomer or two or more such another monomers may be added.

Examples of the monomers having a hexafluoroisopropanol group include the following monomers:

[Image Omitted]

wherein R⁷is a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group, and the hydrogen atom of the hydroxy group may be replaced by a protecting group.

Examples of the acrylic acid esters include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, n-hexyl acrylate, n-octyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, tert-butyl acrylate, 3-oxocyclohexyl acrylate, adamantyl acrylate, methyladamantyl acrylate, ethyladamantyl acrylate, hydroxyadamantyl acrylate, cyclohexyl acrylate, and tricyclodecanyl acrylate.

Examples of the methacrylic acid esters include methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, n-hexyl methacrylate, n-octyl methacrylate, 2-ethylhexyl methacrylate, lauryl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, tert-butyl methacrylate, 3-oxocyclohexyl methacrylate, adamantyl methacrylate, methyladamantyl methacrylate, ethyladamantyl methacrylate, hydroxyadamantyl methacrylate, cyclohexyl methacrylate, and tricyclodecanyl methacrylate.

Examples of the fluorine-containing acrylic acid esters and fluorine-containing methacrylic acid esters include acrylic or methacrylic acid esters containing a fluorine atom or a fluorine-containing alkyl group at the α-position of the acrylic structure, and acrylic or methacrylic acid esters containing a fluorine atom or a fluorine-containing alkyl group in the ester structure.

The fluorine-containing acrylic or methacrylic acid esters may contain a fluorine atom or a fluorine-containing alkyl group both at the α-position of the acrylic structure and in the ester moiety. Also, a cyano group may be introduced at the α-position of the acrylic structure.

Specific examples of the fluorine-containing alkyl group to be introduced at the α-position of the acrylic structure in the fluorine-containing acrylic or methacrylic acid esters include a trifluoromethyl group, a trifluoroethyl group, and a nonafluoro-n-butyl group.

The ester structure in the fluorine-containing acrylic or methacrylic acid esters may have a fluorinated alkyl group such as a perfluoroalkyl group or a fluoroalkyl group. Moreover, the ester structure may contain both a cyclic structure and a fluorine atom. Further, the cyclic structure may have a ring such as a fluorine-containing benzene ring, a fluorine-containing cyclopentane ring, a fluorine-containing cyclohexane ring, or a fluorine-containing cycloheptane ring, each having a fluorine atom, a trifluoromethyl group, a hexafluoroisopropyl hydroxy group, etc. The ester structure may also be a t-butyl ester group having a fluorine atom.

Examples of such fluorine-containing acrylic acid esters include 2,2,2-trifluoroethyl acrylate, 2,2,3,3-tetrafluoropropyl acrylate, 1,1,1,3,3,3-hexafluoroisopropyl acrylate, heptafluoroisopropyl acrylate, 1,1-dihydroheptafluoro-n-butyl acrylate, 1,1,5-trihydrooctafluoro-n-pentyl acrylate, 1,1,2,2-tetrahydrotridecafluoro-n-octyl acrylate, 1,1,2,2-tetrahydroheptadecafluoro-n-decyl acrylate, perfluorocyclohexylmethyl acrylate, 6-[3,3,3-trifluoro-2-hydroxy-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptyl-2-yl acrylate, 6-[3,3,3-trifluoro-2-hydroxy-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptyl-2-yl-2-(trifluoromethyl)acrylate, and 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl-2-trifluoromethyl acrylate.

Examples of the fluorine-containing methacrylic acid esters include 2,2,2-trifluoroethyl methacrylate, 2,2,3,3-tetrafluoropropyl methacrylate, 1,1,1,3,3,3-hexafluoroisopropyl methacrylate, heptafluoroisopropyl methacrylate, 1,1-dihydroheptafluoro-n-butyl methacrylate, 1,1,5-trihydrooctafluoro-n-pentyl methacrylate, 1,1,2,2-tetrahydrotridecafluoro-n-octyl methacrylate, 1,1,2,2-tetrahydroheptadecafluoro-n-decyl methacrylate, perfluorocyclohexylmethyl methacrylate, 6-[3,3,3-trifluoro-2-hydroxy-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptyl-2-yl methacrylate, 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl acrylate, and 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl methacrylate.

Examples of the styrenes and fluorine-containing styrenes include styrene, hydroxystyrene, and fluorinated styrenes.

Examples of the fluorinated styrenes include styrenes in which hydrogen atoms of the aromatic ring are replaced by a fluorine atom or a trifluoromethyl group such as pentafluorostyrene, trifluoromethylstyrene, and bistrifluoromethylstyrene. Other examples include styrenes in which hydrogen atoms of the aromatic ring are replaced by a hexafluoroisopropanol group or a hexafluoroisopropanol group whose hydroxy group is protected with a protecting group. Also usable are the above-described styrenes in which a halogen, an alkyl group, or a fluorine-containing alkyl group is bonded at the α-position, and styrenes containing a perfluorovinyl group.

The vinyl ethers, fluorine-containing vinyl ethers, allyl ethers, and fluorine-containing allyl ethers may have a methyl group, an ethyl group, a propyl group, a butyl group, or a hydroxy group such as a hydroxyethyl group or a hydroxybutyl group in the structure.

These compounds may also contain in the structure a cyclic vinyl or allyl ether having a cyclohexyl group, a norbornyl group, an aromatic ring, or the ring structure thereof containing hydrogen or a carbonyl bond. The hydrogen atoms of the foregoing groups may be partially or fully replaced by a fluorine atom.

Examples of the unsaturated amides include acrylamide, methacrylamide, N-methylolacrylamide, N-methylolmethacrylamide, and diacetone acrylamide.

Examples of the olefins include ethylene, propylene, isobutene, cyclopentene, and cyclohexene.

Examples of the fluorine-containing olefins include vinyl fluoride, vinylidene fluoride, trifluoroethylene, chlorotrifluoroethylene, tetrafluoroethylene, hexafluoropropylene, and hexafluoroisobutene.

The monomers having a norbornene moiety may contain one or more norbornene moieties in which a hydrogen atom may be replaced by a fluorine-containing functional group.

Examples of such monomers include norbornene compounds synthesized by Diels-Alder addition reactions of cyclopentadiene or cyclohexadiene and unsaturated compounds.

Examples of the unsaturated compounds used in the synthesis of the norbornene compounds include acrylic acid, methacrylic acid, α-fluoroacrylic acid, α-trifluoromethylacrylic acid, acrylic acid esters, methacrylic acid esters, fluorine-containing acrylic acid esters, fluorine-containing methacrylic acid esters, fluorine-containing olefins, allyl alcohols, fluorine-containing allyl alcohols, homoallyl alcohols, fluorine-containing homoallyl alcohols, 2-(benzoyloxy)pentafluoropropane, 2-(methoxyethoxymethyloxy)pentafluoropropene, 2-(tetrahydroxypyranyloxy)pentafluoropropene, 2-(benzoyloxy)trifluoroethylene, 2-(methoxymethyloxy)trifluoroethylene, and 3-(5-bicyclo[2.2.1]hepten-2-yl)-1,1,1-trifluoro-2-(trifluoromethyl)-2-propanol.

The acid-decomposable group in the monomer containing an acid-decomposable group may be any group that can be hydrolyzed by an acid generated from the photoacid generator in the resist and detached from the fluorine-containing polymer. As such an acid-decomposable group, the monomer preferably has an acid-decomposable group represented by the following formula (9) or (10):

[Image Omitted]

wherein R⁸, R⁹, R¹⁰, and R¹²are each independently a C1-C25 linear alkyl group or a C3-C25 branched or cyclic alkyl group, in which the hydrogen atoms in the alkyl group may be partially or fully replaced by a fluorine atom, an oxygen atom, a nitrogen atom, a sulfur atom, or a hydroxy group; any two of R⁸, R⁹, and R¹⁰may be bonded to each other to form a ring; R¹¹is a hydrogen atom, a C1-C25 linear alkyl group, or a C3-C25 branched or cyclic alkyl group, in which the hydrogen atoms in the alkyl group may be partially or fully replaced by a fluorine atom, an oxygen atom, a nitrogen atom, a sulfur atom, or a hydroxy group; and the dotted lines represent bonds.

Specific examples of the acid-decomposable groups of formulas (9) and (10) include the acid-decomposable groups listed below. Here, the dotted lines represent bonds.

[Image Omitted]

Examples of the monomer having a lactone structure include monomers having a monocyclic lactone structure such as a group obtained by removing one hydrogen atom from α-butyrolactone or mevalonic lactone, and monomers having a polycyclic lactone structure such as a group obtained by removing one hydrogen atom from norbornane lactone.

Among the another monomers described above, 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl methacrylate represented by the following formula (11) and 1,1,2,2-tetrahydroheptadecafluoro-n-decyl acrylate represented by the following formula (12) are preferred.

[Image Omitted]

When 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl methacrylate is added and the resulting fluorine-containing polymer of the present disclosure is used as a component of a resist film or an overlying film, the following effects can be obtained: an increase in solubility in the organic solvent used in the preparation of a coating liquid, and improvement of solubility in the developer used in development.

When 1,1,2,2-tetrahydroheptadecafluoro-n-decyl acrylate is added and the resulting fluorine-containing polymer of the present disclosure is used as a component of an overlying film, the adhesion of the overlying film to the underlying resist film can be improved, and the water repellency of the surface of the overlying film can be improved, so that the exposure time can be shortened in immersion exposure using water as the exposure medium. In addition, the surface tension can be reduced, the surface of the overlying film can be smoothed, and the film thickness can be made uniform.

When another monomer is added, the amount thereof is not limited, but the percentage of the repeating unit derived from the another monomer based on 100 mol % of the total repeating units in the fluorine-containing polymer of the present disclosure after the polymerization is preferably at least 1 mol % but not more than 80 mol %, more preferably at least 5 mol % but not more than 70 mol %, even more preferably at least 10 mol % but not more than 60 mol %.

If the percentage of the repeating unit derived from the another monomer is less than 1 mol %, the following effects expected when the resulting fluorine-containing polymer is used as a resist can be inhibited: improvement of solubility in an organic solvent, improvement of the adhesion between a base material and the resist film formed on the base material, and improvement of the etching resistance of the resist pattern.

If the percentage of the repeating unit derived from the another monomer is more than 80 mol %, the percentage of the repeating unit of formula (1) is reduced so that the effect of improving the transparency of the resist film and the effect of improving the solvent solubility can be inhibited.

Non-limiting examples of the polymerization reaction in the polymerization step include a radical polymerization reaction, an ionic polymerization reaction, a coordinated anionic polymerization reaction, a living anionic polymerization reaction, and a cationic polymerization reaction.

A radical polymerization reaction is preferred among these.

When the polymerization reaction is a radical polymerization reaction, any polymerization initiator may be used as long as it can allow the polymerization reaction to occur. The polymerization initiator may be an azo compound, a peroxide compound, or a redox compound.

Examples of the azo compound include azobisisobutyronitrile.

Examples of the peroxide compound include t-butyl peroxypivalate, di-t-butyl peroxide, i-butyryl peroxide, lauroyl peroxide, succinic acid peroxide, dicinnamyl peroxide, di-n-propyl peroxydicarbonate, t-butyl peroxyallyl monocarbonate, benzoyl peroxide, hydrogen peroxide, and ammonium persulfate.

As the redox compound, a combination of an oxidizing agent and a reducing agent may be used. Examples of the oxidizing agent compound include hydrogen peroxide, persulfates, and cumene hydroperoxide. Examples of the reducing agent compound include iron (II) ionic salts, copper (I) ionic salts, ammonia, and triethylamine.

In the radical polymerization reaction, a polymerization solvent may also be used.

The polymerization solvent may be any one as long as it does not inhibit the radical polymerization reaction, and may be an organic solvent or water.

Examples of the organic solvent include hydrocarbon solvents, ester solvents, ketone solvents, alcohol solvents, ether solvents, cyclic ether solvents, fluorocarbon solvents, and aromatic solvents.

These solvents may be used alone or in combinations of two or more.

Examples of the ester solvents include acetic acid and n-butyl acetate.

Examples of the ketone solvents include acetone and methyl isobutyl ketone.

Examples of the hydrocarbon solvents include toluene and cyclohexane.

Examples of the alcohol solvents include methanol, isopropyl alcohol, and ethylene glycol monomethyl ether.

In the radical polymerization reaction, a molecular weight modifier such as mercaptan may also be used.

Although the reaction temperature in the radical polymerization reaction may be appropriately changed depending on the type of radical polymerization initiator or radical polymerization initiator, it is preferably at least 20° C. but not higher than 200° C., more preferably at least 30° C. but not higher than 140° C.

After the polymerization step, the organic solvent or water as the medium may be removed from the solution or dispersion containing the synthesized fluorine-containing polymer by a known method.

Specific examples of the method include reprecipitation, filtration, and thermal distillation under reduced pressure.

Through the above steps, the fluorine-containing polymer of the present disclosure containing the repeating unit of formula (1) and the repeating unit of formula (2) can be produced.

The fluorine-containing polymer of the present disclosure preferably has a weight average molecular weight of 5000 to 20000, more preferably 7000 to 12000.

Moreover, the weight average molecular weight of the fluorine-containing polymer herein refers to the numerical value measured by gel permeation chromatography (GPC) under the following conditions.

(Gpc Conditions)

Apparatus: HLC-8320GPC available from Tosoh Corporation

Column for polymerizable monomer analysis: TSKgel series (G2500HXL, G2000HXL, G1000HXL, and G1000HXL connected in series in this order) available from Tosoh Corporation

Column for polymer analysis: TSKgel series (G2500HXL, G2000HXL, G1000HXL, and G1000HXL connected in series in this order) available from Tosoh Corporation

Temperature program: 40° C. (hold)

Flow rate: 1 mL/min

Detector: Differential refractometer (RI)

Eluent: Tetrahydrofuran (THF)

Reference substance: Polystyrene standard solutions

Next, a method for using the fluorine-containing polymer of the present disclosure is described.

The fluorine-containing polymer of the present disclosure can be used as a component of a resist film.

The fluorine-containing polymer of the present disclosure can also be used as a component of an overlying film for protecting a resist film and/or a resist pattern.

In particular, when the fluorine-containing polymer of the present disclosure contains a hexafluoroisopropanol group in the structure, an overlying film can be formed from the fluorine-containing polymer of the present disclosure by immersion exposure. In this case, the resist film and/or resist pattern on which the overlying film is formed may be of either negative or positive type.

When the fluorine-containing polymer of the present disclosure contains an aliphatic chain structure and a hexafluoroisopropanol group, it has properties with a high light transmittance at a wavelength of 300 nm or less. In this case, when the fluorine-containing polymer of the present disclosure is used to form a resist film, an electromagnetic wave with a wavelength of 300 nm or less can be used in the exposure.

When the fluorine-containing polymer of the present disclosure is used to form a resist film or an overlying film, the weight average molecular weight of the fluorine-containing polymer of the present disclosure can affect the solubility in a solvent and the properties of the formed resist film or overlying film such as the glass transition temperature Tg.

When the fluorine-containing polymer of the present disclosure having a high weight average molecular weight is used to form a resist film, the rate of dissolution in a developer tends to be reduced. When the fluorine-containing polymer of the present disclosure has a low weight average molecular weight, the rate of dissolution in a developer tends to be increased.

When the fluorine-containing polymer of the present disclosure is used to form a resist film or an overlying film, the fluorine-containing polymer of the present disclosure may be dissolved and diluted in a solvent or a mixture of water and a solvent to prepare a film-forming solution.

The solvent used when the fluorine-containing polymer of the present disclosure is used to form an overlying film is preferably a solvent which is less likely to corrode the resist film and/or resist pattern on which the overlying film is formed, and in which the additives in these films are less likely to dissolve.

The solvent in which the fluorine-containing copolymer of the present disclosure is to be dissolved preferably has a boiling point of 70° C. to 170° C.

The solvent having a boiling point of lower than 70° C. may evaporate too rapidly, making it difficult to form a uniform film.

With the solvent having a boiling point of higher than 170° C., drying the coating film can take time, and the throughput tends to decrease.

Moreover, examples of the type of solvent include hydrocarbon solvents, alcohol solvents, ether solvents, ester solvents, and fluorine solvents. Preferred among these are C5-C20 alkane or alicyclic hydrocarbon solvents, C1-C20 alcohol solvents, and fluorine solvents obtained by replacing a part of the hydrogen atoms in C5-C20 alkane or alicyclic hydrocarbons or C1-C20 alcohols by a fluorine atom. Each of these solvents may be used alone, or two or more of these may be used in combination.

When two or more solvents are used in combination, the compositional mass ratio of hydrocarbon and alcohol solvents is preferably such that hydrocarbon solvent:alcohol solvent=50 to 99.9:0.1 to 50.

Examples of the hydrocarbon solvents include pentane, hexane, heptane, octane, nonane, and decane. Examples of the alcohol solvents include normal butanol, isobutanol, tertiary butanol, methylethylcarbinol, pentanol, amyl alcohol, hexyl alcohol, heptyl alcohol, and 4-methyl-2-pentanol.

Moreover, the solvent is preferably a fluorine solvent because it can rapidly dissolve the fluorine-containing polymer.

Specific examples of the fluorine solvent include 2-fluoroanisole, 3-fluoroanisole, 4-fluoroanisole, 2,3-difluoroanisole, 2,4-difluoroanisole, 2,5-difluoroanisole, 5,8-difluoro-1,4-benzodioxane, 2,3-difluorobenzyl alcohol, 1,3-difluoro-2-propanol, 2′,4′-difluoropropiophenone, 2,4-difluorotoluene, trifluoroacetaldehyde ethyl hemiacetal, trifluoroacetamide, trifluoroethanol, 2,2,2-trifluoroethylbutyrate, ethyl heptafluorobutyrate, ethyl heptafluorobutylacetate, ethyl hexafluoroglutarylmethyl, ethyl-3-hydroxy-4,4,4-trifluorobutyrate, ethyl-2-methyl-4,4,4-trifluoroacetoacetate, ethyl pentafluorobenzoate, ethyl pentafluoropropionate, ethyl pentafluoropropynylacetate, ethyl perfluorooctanoate, ethyl-4,4,4-trifluoroacetoacetate, ethyl-4,4,4-trifluorobutyrate, ethyl-4,4,4-trifluorocrotonate, ethyl trifluorosulfonate, ethyl-3-(trifluoromethyl)butyrate, ethyl trifluoropyruvate, S-ethyl trifluoroacetate, fluorocyclohexane, 2,2,3,3,4,4,4-heptafluoro-1-butanol, 1,1,1,2,2,3,3-heptafluoro-7,7-dimethyl-4,6-octanedione, 1,1,1,3,5,5,5-heptafluoropentane-2,4-dione, 3,3,4,4,5,5,5-heptafluoro-2-pentanol, 3,3,4,4,5,5,5-heptafluoro-2-pentanone, isopropyl 4,4,4-trifluoroacetoacetate, methyl perfluorodenanoate, methyl perfluoro(2-methyl-3-oxahexanoate), methyl perfluorononanoate, methyl perfluorooctanoate, methyl-2,3,3,3-tetrafluoropropionate, methyl trifluoroacetoacetate, 1,1,1,2,2,6,6,6-octafluoro-2,4-hexanedione, 2,2,3,3,4,4,5,5-octafluoro-1-pentanol, 1H,1H,2H,2H-perfluoro-1-decanol, perfluoro(2,5-dimethyl-3,6-dioxane anionic) acid methyl ester, 2H-perfluoro-5-methyl-3,6-dioxanonane, 1H,1H,2H,3H,3H-perfluorononane-1,2-diol, 1H,1H,9H-perfluoro-1-nonanol, 1H,1H-perfluorooctanol, 1H,1H,2H,2H-perfluorooctanol, 2H-perfluoro-5,8,11,14-tetramethyl-3,6,9,12,15-pentaoxaoctadecane, perfluorotributylamine, perfluorotrihexylamine, perfluoro-2,5,8-trimethyl-3,6,9-trioxadodecanoic acid methyl ester, perfluorotripentylamine, perfluorotripropylamine, 1H,1H,2H,3H,3H-perfluoroundecane-1,2-diol, trifluorobutanol 1,1,1-trifluoro-5-methyl-2,4-hexanedione, 1,1,1-trifluoro-2-propanol, 3,3,3-trifluoro-1-propanol, 1,1,1-trifluoro-2-propyl acetate, perfluorobutyltetrahydrofuran, perfluoro(butyltetrahydrofuran), perfluorodecalin, perfluoro(1,2-dimethylcyclohexane), perfluoro(1,3-dimethylcyclohexane), propylene glycol trifluoromethyl ether acetate, propylene glycol methyl ether trifluoromethyl acetate, butyl trifluoromethylacetate, methyl 3-trifluoromethoxypropionate, perfluorocyclohexanone, propylene glycol trifluoromethyl ether, butyl trifluoroacetate, 1,1,1-trifluoro-5,5-dimethyl-2,4-hexanedione, 1,1,1,3,3,3-hexafluoro-2-propanol, 1,1,1,3,3,3-hexafluoro-2-methyl-2-propanol, 2,2,3,4,4,4-hexafluoro-1-butanol, 2-trifluoromethyl-2-propanol, 2,2,3,3-tetrafluoro-1-propanol, 3,3,3-trifluoro-1-propanol, and 4,4,4-trifluoro-1-butanol.

Each of these solvents may be used alone, or two or more of these may be used in combination.

When the fluorine-containing polymer of the present disclosure is used to form a resist film or an overlying film, the fluorine-containing polymer is preferably dissolved in the solvent so that the solid concentration of the film-forming solution is at least 3% by mass but not more than 25% by mass, more preferably at least 5% by mass but not more than 15% by mass.

With the solid concentration in the above range, the resist film or overlying film can be formed rapidly and without any unevenness in the thickness.

When the fluorine-containing polymer of the present disclosure is used to form a resist film, the film-forming solution may contain components other than the fluorine-containing polymer and solvent, such as a photoacid generator, a quencher, and a non-fluorinated polymer.

When the fluorine-containing polymer of the present disclosure is used to form an overlying film, the film-forming solution may contain components other than the fluorine-containing polymer and solvent, such as a non-fluorinated polymer.

When the fluorine-containing polymer of the present disclosure is used to form a resist film, the film-forming solution may be applied to a base material and baked to form a resist film. Thereafter, the formed resist film will be immersed and dissolved in a developer.

A non-limiting example of the developer may be an aqueous solution of tetramethylammonium hydroxide at a concentration of at least 0.1% by mass but not more than 10% by mass.

The fluorine-containing polymer of the present disclosure contains the repeating unit of formula (2) in an amount, expressed in parts per million based on the mass of the repeating unit of formula (1), of 1500 ppm or less.

Thus, when the formed resist film is immersed in the developer, it can dissolve rapidly and is less likely to leave a residue.

In this case, the film-forming solution may be applied to any base material. Examples include a silicon wafer, a compound semiconductor substrate, an insulating substrate, and a central processing unit (CPU), a static random access memory (SRAM), and a dynamic random access memory (DRAM) to be placed on other substrates.

In the application of the film-forming solution, the film-forming solution may be directly applied to a base material to form a resist film, or the film-forming solution may be applied to another layer provided on a base material, to form a resist film.

Examples of the another layer include an antireflection film, a SiO₂film, and a Si₃N₄film.

The antireflection film can be formed from, for example, an anti-reflective coating agent (e.g., ARC products available from Nissan Chemical Corporation).

When the base material used is a silicon wafer, a SiO₂film can be formed on the surface of the silicon wafer by high temperature steam treatment at 900° C. in an oxidation furnace. Also, a Si₃N₄film can be formed on the SiO₂film on the surface of the silicon wafer by chemical vapor deposition (CVD) of SiH₂and NH₃.

When the fluorine-containing polymer of the present disclosure is used to form a resist film, the film-forming solution may be applied to a base material to form a resist film. Thereafter, the resist film may be subjected to exposure or immersion exposure.

Also, when the fluorine-containing polymer of the present disclosure is used to form an overlying film, the film-forming solution may be applied to a resist film and/or a resist pattern to form an overlying film. Thereafter, the overlying film may be subjected to exposure or immersion exposure.

Although the electromagnetic wave used for the exposure may have any wavelength, the electromagnetic wave preferably has a wavelength of 300 nm or less in order to obtain a high-resolution pattern.

A KrF excimer laser (wavelength: 248 nm) or an ArF excimer laser (wavelength: 193 nm) can be used as an electromagnetic wave irradiator. An ArF excimer laser is preferred among these.

Moreover, extreme ultraviolet (EUV) rays (wavelength: 13.5 nm), X-rays, and electron beams (EB) can also be used.

Moreover, the fluorine-containing polymer of the present disclosure can be used as an overlying film on a resist film in the production of a semiconductor device. In this case, the overlying film may be subjected to immersion exposure.

Non-limiting examples of the semiconductor device including the fluorine-containing polymer of the present disclosure include a central processing unit (CPU), a static random access memory (SPAM), and a dynamic random access memory (DRAM) placed on a silicon wafer, a compound semiconductor substrate, an insulating substrate, or other substrate.

Here, the immersion exposure is an exposure process in which a liquid for immersion is filled between the lens of an exposure device and a base material.

When the space between the lens of an exposure device and a base material is filled with a liquid for immersion, the exposure light incident on the base material through the lens can have a smaller incident angle than when the space between the lens of the exposure device and the base material is filled with air. Thus, the numerical aperture of the lens can be increased, and the resolution can be improved.

Moreover, even in exposure using a lens with a conventional numerical aperture, the depth of focus can be expanded, and a stable yield can be ensured.

Moreover, in patterning by immersion exposure, the liquid for immersion may penetrate into the resist film, causing patterning defects. Also, the components from the resist film may leach into the liquid for immersion, causing patterning defects. Furthermore, droplets left on the base material after the immersion exposure may result in pattern defects.

Immersion exposure may include forming an overlying film on the resist film in order to prevent such patterning defects and the like.

The fluorine-containing polymer of the present disclosure is useful as a material for such an overlying film to be formed on the resist film.

In immersion exposure, first, a resist solution is applied to a base material such as a silicon wafer using a spinner or the like. Thereafter, pre-baking is performed to form a resist film.

Next, a film-forming solution containing the fluorine-containing polymer of the present disclosure is applied to the surface of the formed resist film to a uniform thickness using a spinner or the like. Thereafter, heat treatment is performed to form an overlying film on the resist film.

While the base material on which the overlying film is formed is immersed in an exposure medium such as water, the overlying film and the resist film are irradiated with an electromagnetic wave having a wavelength of 300 nm or less through a mask or reticle on which a circuit pattern is defined. Then, the electromagnetic wave passes through the medium (e.g., water) and the overlying film and reaches the underlying resist film. Here, the resist film does not have direct contact with the exposure medium owing to the overlying film formed thereon. Thus, the exposure medium will not penetrate into the resist film to swell it, and the components in the resist film can be prevented from dissolving in the exposure medium.

The exposed base material is baked and then developed using a developer. Usually, an aqueous solution of tetramethylammonium hydroxide at a concentration of at least 0.1% by mass but not more than 10% by mass as an alkaline aqueous solution can be used as the developer. During the development, the overlying film dissolves, and only the exposed area of the underlying resist film dissolves.

The fluorine-containing polymer of the present disclosure contains the repeating unit of formula (2) in an amount, expressed in parts per million based on the mass of the repeating unit of formula (1), of 1500 ppm or less. Thus, when the formed overlying film is immersed in the developer, it can dissolve rapidly and is less likely to leave a residue. As a result, a resist pattern with sharp edges is formed.

Particular non-limiting examples of the present disclosure will be described below.

Preparation of Standard Sample of Monomer of Formula (4)
Fluorine-Containing Monomer Synthesis Step

A 1 L three-necked flask equipped with a thermometer, a reflux condenser, and a stirrer was charged with 100 g (0.44 mol) of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-1,3-diol (a compound represented by the following formula (3-1)), 74.6 g (0.48 mol) of methacrylic anhydride, 4.2 g (0.044 mol) of methanesulfonic acid, 400 g of toluene, and 0.5 g of phenothiazine. Thereafter, the bottom of the three-necked flask was immersed in an oil bath adjusted at a temperature of 50° C., and the contents were reacted for four hours with stirring to obtain a composition.

The composition was measured by gas chromatography and the reaction solution was found to contain 94.5% by mass of 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (a compound represented by the following formula (4-1)), 1.6% by mass of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-1,3-diol, 2.0% by mass of methacrylic anhydride, and 1.9% by mass of other compounds, except for methacrylic acid as a minor reaction product.

[Image Omitted]

Fluorine-Containing Monomer Purification Step

The resulting composition was placed in a separatory funnel and washed twice with 400 g of sodium bicarbonate water. Then, the organic layer was collected and dried with 30 g of magnesium sulfate. The magnesium sulfate was removed by filtration. To the filtrate was added 0.7 g of phenothiazine as a polymerization inhibitor, the solvent was evaporated off, and then distillation under reduced pressure (8 Torr=1.1 kPa) was performed to collect a fraction at 80° C. to 82° C. Thus, 112 g of the fraction was obtained. The yield was 87%.

The fraction was analyzed with a gas chromatography-mass spectrometer (GC-MS) and found to be as shown below: the purity of the target product 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)) was 97.0% and 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (a fluorine-containing monomer represented by the following formula (5-1)) as a minor reaction product was present.

[Image Omitted]

The above operation was repeated to produce 3.0 kg of a fraction containing 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)).

The resulting fraction was subjected to precision distillation in an Oldershaw distillation column to obtain 2.76 kg of a fraction having a boiling point of 80° C. at a pressure of 0.5 kPa.

The resulting fraction was measured by GC-MS and found to contain 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)) with a purity of 99.8%.

The concentration of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (the fluorine-containing monomer of formula (5-1)) measured by GC-MS before the precision distillation was 2600 ppm, while the concentration thereof after the precision distillation was decreased to 10 ppm. Thus, a composition containing 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)) whose purity had been increased by precision distillation was obtained. The composition was used as a standard sample of 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)).

Moreover, a standard sample of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (the fluorine-containing monomer of formula (5-1)) was prepared by the following method.

A 1 L three-necked flask equipped with a thermometer, a reflux condenser, and a stirrer was charged with 100 g of the standard sample of 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)) and then with 60 g of triethylamine, 4 g of N,N-dimethylaminopyridine, and 1 g of phenothiazine. The bottom of the flask was immersed in an ice bath, and 79 g of methacrylic anhydride was added dropwise with stirring. Then, the contents were returned to room temperature and stirred for one hour to obtain a reaction solution. The reaction solution was transferred to a separatory funnel and diluted with 300 g of toluene. Then, 200 mL of dilute hydrochloric acid was added thereto to terminate the reaction. The organic layer was separated. The separated organic layer was washed twice with 200 g of water, and then the solvent was evaporated off with a rotary evaporator. Then, distillation was performed in a distillation apparatus equipped with a Vigreux column. A fraction at 86° C. to 88° C. was collected at a reduced pressure of 0.5 kPa to obtain 16 g of oil. The oil was measured by GC-MS and found to contain 96% by mass of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (the fluorine-containing monomer of formula (5-1)) and 2.5% by mass of unreacted 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)). The oil was used as a standard sample of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (the fluorine-containing monomer of formula (5-1)).

Preparation of Raw Material Composition to be Used in Polymerization Step

The prepared standard sample of 5,5,5-trifluoro-4-hydroxy-4-trifluoromethylpentan-2-yl methacrylate (the fluorine-containing monomer of formula (4-1)) and the prepared standard sample of 1,1,1-trifluoro-2-(trifluoromethyl)pentane-2,4-diyl methacrylate (the fluorine-containing monomer of formula (5-1)) were used to prepare raw material compositions A to F at the ratios shown in Table 1.

TABLE 1

Purity offluorine-
Concentration of

Raw
containing monomer
fluorine-containing

material
of formula (4-1)
monome of

composition
Purity (%)
formula (5-1) (ppm)

A
99.8
10

B
99.8
100

C
99.8
400

D
99.8
500

E
99.7
1000

F
99.6
2000

Example 1
Polymerization Step

At room temperature (about 20° C.), a 500 mL vessel was charged with 100 g of the raw material composition A. To the vessel was added 200 g of 2-butanone containing 6.26 g of dimethyl-2,2′-azobis(2-methylpropionate) (Wako Pure Chemical Industries, Ltd., product name V-601) dissolved therein to give a raw material composition A solution. The solution was transferred to a dropping funnel. Next, the dropping funnel was attached to a 500 mL reactor that was separately charged with 100 g of 2-butanone, and the 2-butanone was heated to 78° C.

While the temperature of the 2-butanone in the reactor was maintained at 78±1° C., the raw material composition A solution was gradually added dropwise to the reactor from the dropping funnel over two hours under a nitrogen stream. After completion of the dropwise addition, the mixture was maintained at a temperature of 78±1° C. for six hours and then cooled. Here, the mixture was gradually cooled to 30° C. over 30 minutes. Thus, a fluorine-containing polymer containing a repeating unit represented by the following formula (1-1) and a repeating unit represented by the following formula (2-1) was obtained. The fluorine-containing polymer was used as a fluorine-containing polymer according to Example 1.

The weight average molecular weight of the fluorine-containing polymer according to Example 1 was measured by gel permeation chromatography (GPC) and found to be 9575 (N=1).

[Image Omitted]

In the same manner, the production of a fluorine-containing polymer according to Example 1 was performed five times (N=2 to 6), for a total of six times. The weight average molecular weight of the fluorine-containing polymer according to Example 1 obtained in each production was measured. Table 2 shows the results.

Next, the reaction solution containing the fluorine-containing polymer was gradually added dropwise to n-heptane adjusted at a temperature of 25° C. over one hour with stirring, followed by stirring for an additional one hour. Thus, a fluorine-containing polymer slurry was obtained. The slurry was filtered under reduced pressure to obtain a cake. The cake was dried to obtain powder of the fluorine-containing polymer according to Example 1.

Example 2 to Example 5

Fluorine-containing polymers according to Examples 2 to 5 were produced as in Example 1, except that the raw material compositions B to E, respectively, were used instead of the raw material composition A. Then, the weight average molecular weights of the fluorine-containing polymers according to Examples 2 to 5 were measured. Table 2 shows the results.

Example 6

At room temperature (about 20° C.), a 500 mL vessel was charged with 80 g of the raw material composition A and 20 g of 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl)cyclohexyl methacrylate (a monomer of formula (11)). To the vessel was added 200 g of 2-butanone containing 6.26 g of dimethyl-2,2′-azobis(2-methylpropionate) (Wako Pure Chemical Industries, Ltd., product name V-601) dissolved therein to give a solution mixture with the raw material composition A. The solution mixture was transferred to a dropping funnel. Next, the dropping funnel was attached to a 500 mL reactor that was separately charged with 100 g of 2-butanone, and the 2-butanone was heated to 78° C.

While the temperature of the 2-butanone in the reactor was maintained at 78±1° C., the solution mixture was gradually added dropwise to the reactor from the dropping funnel over two hours under a nitrogen stream. After completion of the dropwise addition, the mixture was maintained at a temperature of 78±1° C. for six hours and then cooled. Here, the mixture was gradually cooled to 30° C. over 30 minutes. Thus, a fluorine-containing polymer containing a repeating unit represented by the following formula (1-1), a repeating unit represented by the following formula (2-1), and a repeating unit represented by the following formula (11-1) was obtained. The fluorine-containing polymer was used as a fluorine-containing polymer according to Example 6.

Next, the 2-butanone was removed from the reaction solution, and the molecular weight of the fluorine-containing polymer according to Example 6 was measured by GPC and found to be 9669 (N=1).

[Image Omitted]

In the same manner, the production of a reaction solution of a fluorine-containing polymer according to Example 6 was performed five times (N=2 to 6), for a total of six times. The weight average molecular weight of the fluorine-containing polymer according to Example 6 obtained in each production was measured. Table 2 shows the results.

Example 7

A fluorine-containing polymer according to Example 7 was produced as in Example 6, except that the raw material composition C was used instead of the raw material composition A. Then, the weight average molecular weight of the fluorine-containing polymer according to Example 7 was measured. Table 2 shows the results.

Example 8

At room temperature (about 20° C.), a 500 mL vessel was charged with 95 g of the raw material composition A and 5 g of 1,1,2,2-tetrahydroheptadecafluoro-n-decyl acrylate (a monomer of formula (12)). To the vessel was added 200 g of 2-butanone containing 6.26 g of dimethyl-2,2′-azobis(2-methylpropionate) dissolved therein to give a solution mixture with the raw material composition A. The solution mixture was transferred to a dropping funnel. Next, the dropping funnel was attached to a 500 mL reactor that was separately charged with 100 g of 2-butanone, and the 2-butanone was heated to 78° C.

While the temperature of the 2-butanone in the reactor was maintained at 78±1° C., the solution mixture was gradually added dropwise to the reactor from the dropping funnel over two hours under a nitrogen stream. After completion of the dropwise addition, the mixture was maintained at a temperature of 78±1° C. for six hours and then cooled. Here, the mixture was gradually cooled to 30° C. over 30 minutes. Thus, a fluorine-containing polymer containing a repeating unit represented by the following formula (1-1), a repeating unit represented by the following formula (2-1), and a repeating unit represented by the following formula (12-1) was obtained. The fluorine-containing polymer was used as a fluorine-containing polymer according to Example 8.

The weight average molecular weight of the fluorine-containing copolymer according to Example 8 obtained by removing the 2-butanone from the reaction solution was measured by gel permeation chromatography (GPC) and found to be 9532 (N=1).

[Image Omitted]

In the same manner, the production of a reaction solution of a fluorine-containing polymer according to Example 8 was performed five times (N=2 to 6), for a total of six times. The weight average molecular weight of the fluorine-containing polymer according to Example 8 obtained in each production was measured. Table 2 shows the results.

Example 9

A fluorine-containing polymer according to Example 9 was produced as in Example 8, except that the raw material composition C was used instead of the raw material composition A. Then, the weight average molecular weight of the fluorine-containing polymer according to Example 9 was measured. Table 2 shows the results.

Comparative Example 1

A fluorine-containing polymer according to Comparative Example 1 was produced as in Example 1, except that the raw material composition F was used instead of the raw material composition A. Then, the weight average molecular weight of the fluorine-containing polymer according to Comparative Example 1 was measured. Table 2 shows the results.

Comparative Example 2

A fluorine-containing polymer according to Comparative Example 2 was produced as in Example 8, except that the raw material composition F was used instead of the raw material composition A. Then, the weight average molecular weight of the fluorine-containing polymer according to Comparative Example 2 was measured. Table 2 shows the results.

(Amount of Repeating Unit)

For each of the fluorine-containing polymers according to the examples and comparative examples, the amount of the repeating unit of formula (1-1) and the amount of the repeating unit of formula (2-1) were measured, and the amount of the repeating unit of formula (2-1) was calculated in parts per million based on the mass of the repeating unit of formula (1-1). Table 2 shows the results.

Here, the amount of the repeating unit of formula (2-1) among the repeating units in each polymer was measured as follows.

First, the reacted solution in each of the examples and comparative examples was measured by HPLC, and it was confirmed by HPLC that no raw material monomer remained in the reacted solution.

Based on this confirmation, the amount of the repeating unit of formula (2-1) in each of the polymers according to the examples and comparative examples was quantified from their ¹H-NMR, ¹⁹F-NMR, or ¹³C-NMR measurements.

TABLE 2

Amount of

repeating unit

Weight average molecular weight
of formula (2-1)

Composition
N = 1
N = 2
N = 3
N = 4
N = 5
N = 6
Average
(ppm)

Example 1
Raw material composition A
9575
9616
9587
9578
9607
9585
9591
10

Example 2
Raw material composition B
9581
9585
9619
9617
9628
9598
9605
100

Example 3
Raw material composition C
9592
9630
9647
9571
9621
9565
9604
395

Example 4
Raw material composition D
9516
9547
9617
9671
9667
9705
9621
495

Example 5
Raw material composition E
9545
9603
9622
9769
9558
9462
9593
995

Example 6
Raw material composition A +
9669
9652
9639
9671
9622
9667
9653
<10

monomer of formula (11)

Example 7
Raw material composition C +
9684
9705
9644
9603
9636
9619
9649
310

monomer of formula (11)

Example 8
Raw material composition A +
9532
9537
9544
9567
9534
9554
9545
<10

monomer of formula (12)

Example 9
Raw material composition C +
9503
9509
9590
9545
9541
9562
9542
380

monomer of formula (12)

Comparative
Raw material composition F
9780
9455
9507
9703
9614
9681
9623
1990

Example 1

Comparative
Raw material composition F +
9559
9591
9679
9747
9711
9383
9612
1895

Example 2
monomer of formula (12)

(Evaluation of Solubility in Developer and Swelling/Solubility in Water)

The fluorine-containing polymers according to the examples and comparative examples were each dissolved in a solvent mixture containing 95% by mass of n-heptane and 5% by mass of n-hexyl alcohol to prepare a film-forming solution having a solid concentration of 2.5% by mass.

Then, the respective film-forming solutions were each spin-coated on a silicon wafer and baked at 110° C. to obtain a uniform resist film.

The respective resist films were each immersed and dissolved in an aqueous solution of tetramethylammonium hydroxide at a concentration of 2.38% by mass as a developer to evaluate the solubility.

The presence or absence of a residue on the base material was evaluated with a laser microscope. The laser microscope used was VX-1100 available from Keyence Corporation.

Table 3 shows the results.

The following evaluation criteria were used.

Excellent: When the film was immersed in the developer, it rapidly dissolved in the developer and disappeared.

Good: When the film was immersed in the developer, it dissolved within 60 seconds and disappeared.

Poor: When the film was immersed in the developer and taken out after 60 seconds, it dissolved, but residual spots were observed in the area where the film had been present.

The base materials coated with these resist films were each cut in half, and one half of each base material was immersed in pure water for 30 minutes and then compared to the non-immersed base material to evaluate the swelling and solubility of the film.

The following evaluation method was used.

Observation and evaluation were made on the immersed and non-immersed base materials with a laser microscope. The laser microscope used was VX-1100 available from Keyence Corporation.

Table 3 shows the results.

The following evaluation criteria were used.

Good: Neither swelling nor dissolution of the film occurred.

Poor: Swelling and dissolution of the film occurred.

TABLE 3

Evaluation

Solubility
of swelling/

in
solubility

Composition
developer
in water

Example 1
Raw material composition A
Excellent
Good

Example 2
Raw material composition B
Excellent
Good

Example 3
Raw material composition C
Excellent
Good

Example 4
Raw material composition D
Good
Good

Example 5
Raw material composition E
Good
Good

Example 6
Raw material composition A +
Excellent
Good

monomer of formula (11)

Example 7
Raw material composition C +
Excellent
Good

monomer of formula (11)

Example 8
Raw material composition A +
Excellent
Good

monomer of formula (12)

Example 9
Raw material composition C +
Excellent
Good

monomer of formula (12)

Comparative
Raw material composition F
Poor
Good

Example 1

Comparative
Raw material composition F +
Poor
Good

Example 2
monomer of formula (12)

As shown in Table 3, the resist films prepared from the fluorine-containing polymers according to Examples 1 to 9, in which the proportion of the repeating unit of formula (2-1) was low, exhibited good solubility in the developer.

In contrast, the resist films prepared from the fluorine-containing polymers according to Comparative Examples 1 and 2, in which the proportion of the repeating unit of formula (2-1) was high, exhibited poor solubility in the developer.