37:I[220912,["/_next/static/chunks/63b7fcc60674a395.js","/_next/static/chunks/15b411643421006b.js","/_next/static/chunks/c30851ce9d64320b.js","/_next/static/chunks/847e5fcc36806577.js","/_next/static/chunks/065d9764318d2368.js","/_next/static/chunks/f7a2a189989de24f.js","/_next/static/chunks/27a9a4c979a82611.js","/_next/static/chunks/e87f33aea3b409ff.js","/_next/static/chunks/07904650c727eea4.js","/_next/static/chunks/46256f925f164fc8.js","/_next/static/chunks/a0711c31e62236a2.js","/_next/static/chunks/eca0048b5bc78566.js","/_next/static/chunks/4bca121c9acf8666.js","/_next/static/chunks/16d56e63127d16d4.js","/_next/static/chunks/c4be71fec85bd2e7.js","/_next/static/chunks/5ab0d399186c6a49.js","/_next/static/chunks/dadfeb7a4bd24f1b.js","/_next/static/chunks/da5aa34b2c555ef9.js","/_next/static/chunks/f27222d8e2233cb0.js","/_next/static/chunks/f7eac714eb3d01d8.js","/_next/static/chunks/539ce0046bee31fa.js","/_next/static/chunks/8ed8cfa4d0ef712f.js","/_next/static/chunks/429b5c8b25956f0d.js","/_next/static/chunks/dd1804c804280679.js","/_next/static/chunks/4438197d884f7ef1.js","/_next/static/chunks/56e8cf1d76a80093.js"],"AppTreeView"] 39:I[814026,["/_next/static/chunks/63b7fcc60674a395.js","/_next/static/chunks/15b411643421006b.js","/_next/static/chunks/c30851ce9d64320b.js","/_next/static/chunks/847e5fcc36806577.js","/_next/static/chunks/065d9764318d2368.js","/_next/static/chunks/f7a2a189989de24f.js","/_next/static/chunks/27a9a4c979a82611.js","/_next/static/chunks/e87f33aea3b409ff.js","/_next/static/chunks/07904650c727eea4.js","/_next/static/chunks/46256f925f164fc8.js","/_next/static/chunks/a0711c31e62236a2.js","/_next/static/chunks/eca0048b5bc78566.js","/_next/static/chunks/4bca121c9acf8666.js","/_next/static/chunks/16d56e63127d16d4.js","/_next/static/chunks/c4be71fec85bd2e7.js","/_next/static/chunks/5ab0d399186c6a49.js","/_next/static/chunks/dadfeb7a4bd24f1b.js","/_next/static/chunks/da5aa34b2c555ef9.js","/_next/static/chunks/f27222d8e2233cb0.js","/_next/static/chunks/f7eac714eb3d01d8.js","/_next/static/chunks/539ce0046bee31fa.js","/_next/static/chunks/8ed8cfa4d0ef712f.js","/_next/static/chunks/429b5c8b25956f0d.js","/_next/static/chunks/dd1804c804280679.js","/_next/static/chunks/4438197d884f7ef1.js","/_next/static/chunks/56e8cf1d76a80093.js"],"UnlockOrUpdateButton"] 38:T522,

1. A nonvolatile semiconductor memory device, comprising: a memory string including a plurality of nonvolatile memory cells for data storage which are capable of storing multi-bit data connected in series;

a first dummy cell which is not used for data storage provided at at least a first end of the memory string;

select transistors connected to both ends of the memory string respectively;

word lines connected to control gate electrodes of the nonvolatile memory cells for data storage;

a first dummy word line connected to a control gate electrode of the first dummy cell;

a bit line connected to a first end of the memory string;

a source line connected to a second end of the memory string; and

a control circuit configured to perform an erasing operation by applying an erasing voltage to the nonvolatile memory cell,

wherein before a pre-program operation before an erasing operation to the nonvolatile memory cells, the control circuit performs a pre-preverify operation to the nonvolatile memory cells.