3D NAND memory device and method of forming the same | Patent Publication Number 20200185408

US 20200185408 A1
Patent NumberUS 10950623 B2
Application Number16365725
Filled DateMar 27, 2019
Priority DateDec 7, 2018
Publication DateJun 11, 2020
Original AssigneeYangtze Memory Technologies Co. Ltd.
Current AssigneeYangtze Memory Technologies Co. Ltd.
Inventor/ApplicantsYali Song
Li Hong Xiao
Ming Wang
Li Hong XIAO
Ming WANG
Yali SONG
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