CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority from Malaysian Application No. PI 2011700210, filed Dec. 30, 2011, the entire disclosure of which is hereby incorporated by reference herein.

BACKGROUND

The present invention relates generally to a method of manufacturing a planarised reflective layer for micromirror devices. Micromirror devices require a substantially planarised reflective layer to minimize optical loss due to topography interference. Therefore, fabricating a substantially planarised reflective layer is absolutely crucial. However, the method of manufacturing the same according to conventional methods are complex as it requires various deposition, masking and etching steps. FIG. 1 is a cross-sectional view of a micromirror device comprising a reflective layer manufactured according to conventional methods. According to the conventional methods, an intermediary layer, normally amorphous-Silicon (104), is deposited and planarised prior to depositing an aluminium reflective layer (102). This results in a complex micromirror structure as well as a complex method of manufacturing the same.

SUMMARY

This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This summary is not intended to identify key features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

The present invention provides a method for manufacturing a planarised reflective layer for micromirror devices, more particularly directly depositing a reflective layer on a hinge layer and thereafter planarising the reflective layer using Chemical Mechanical Planarization/Polishing (CMP). The present invention proposes to reduce manufacturing cost, improve manufacturing yield and reduce interfacial stress on the reflective layer.

One aspect of the present invention is a method for manufacturing a planarised reflective layer disposed on a hinge layer connected to a hinge support post. The method comprises depositing a first layer of a first material to form the hinge layer, patterning a first mask over the first layer and selectively removing the first material not covered by any of the first mask to form a plurality of recesses, depositing a second layer of a second material over the first layer, patterning a second mask over the second layer and selectively removing the second material not covered by any of the second mask to form a hinge component, depositing a reflective layer of a reflective material over the second layer and planarising the reflective layer to form a substantially planar reflective surface.

In one embodiment of the present invention, the method further comprises patterning a third mask over the reflective layer and selectively removing the reflective material not covered by any of the third mask to form a micromirror structure. The step of planarising the reflective layer to form a substantially planar reflective surface comprises performing Chemical Mechanical Planarising/Polishing (CMP) on the reflective layer to form the substantially planar reflective surface. The first material comprises a conductive material such as titanium aluminium nitride, aluminium, titanium nitride or doped amorphous silicon, the second material comprises a photoresist material and the reflective material comprises aluminium. The plurality of recesses are disposed above the hinge support post.

The present invention consists of features and a combination of parts hereinafter fully described and illustrated in the accompanying drawings, it being understood that various changes in the details may be made without departing from the scope of the invention or sacrificing any of the advantages of the present invention.

DESCRIPTION OF THE DRAWINGS

The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same become better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:

FIG. 1 is a cross-sectional view of a micromirror device comprising a reflective layer manufactured according to conventional methods.

FIG. 2 is a cross-sectional view of a micromirror device comprising a reflective layer manufactured according to the embodiments of the present invention.

FIGS. 3A-3F are cross-sectional views illustrating the method of manufacturing the planarised reflective layer for micromirror devices according to the embodiments of the present invention.

DETAILED DESCRIPTION

The present invention relates to a method for manufacturing a planarised reflective layer for micromirror devices. Hereinafter, this specification will describe the present invention according to the preferred embodiments of the present invention. However, it is to be understood that limiting the description to the preferred embodiments of the invention is merely to facilitate discussion of the present invention and it is envisioned that those skilled in the art may devise various modifications and equivalents without departing from the scope of the appended claims.

The method for manufacturing the planarised reflective layer for micromirror devices according to the present invention proposes to reduce manufacturing cost, improve manufacturing yield and reduce interfacial stress on a reflective layer of the micromirror device. This is achieved by directly depositing a reflective layer on a topography-hinge layer and thereafter planarising the reflective layer using Chemical Mechanical Planarization/Polishing (CMP).

Reference is being made to FIG. 2. FIG. 2 is a cross-sectional view of a micromirror device comprising a reflective layer manufactured according to the embodiments of the present invention. The micromirror device comprises a hinge support post 210, electrodes 208, a hinge and a micromirror structure. The hinge support post 210 and the electrodes 208 are disposed on a CMOS substrate (not shown). The hinge support post 210 supports the hinge and micromirror structure while the electrodes 208 control the tilting of the hinge. The hinge is a mechanical movable structure that further comprises a topography-hinge layer 206 and a hinge component 212 while the micromirror structure comprises a reflective layer 202. The hinge layer 206 is disposed on the hinge support post 210 and the hinge component 212 is disposed directly above the hinge support post 210. The embodiments of the present invention are focused on the fabrication of the planarised reflective layer of the micromirror structure and the other components are not discussed at length. Reference is now being made to FIGS. 3A-3F. FIGS. 3A-3F are cross sectional views illustrating the method of manufacturing the planarised reflective layer for micromirror devices according to the embodiments of the present invention.

The method for manufacturing the planarised reflective layer disposed on the hinge layer 206 comprises depositing a first layer of a first material to form the hinge layer 206 as shown in FIG. 3A. The first material comprises a conductive material such as titanium aluminium nitride (TiAlN), aluminium, titanium nitride or doped amorphous silicon. Referring to FIG. 3B, the conductive layer is then patterned by a first mask and selectively removed or etched to form the hinge layer 206 with a plurality of recesses. The plurality of recesses are disposed directly above the hinge support post 210.

Thereafter, a second layer of a second material is deposited over the hinge layer 206. The second material comprises a photoresist material. The photoresist layer is patterned by a second mask and selectively removed or etched to form a hinge component 212 as shown in FIG. 3C. FIG. 3D illustrates a deposition of a reflective layer 202 of a reflective material over the photoresist layer. The reflective material comprises aluminium (Al) due to its CMOS compatibility and high reflectance factor. Finally, the reflective layer 202 is directly planarised to form a substantially planar reflective surface as shown in FIG. 3E. The reflective layer 202 is directly planarised through Chemical Mechanical Planarising/Polishing (CMP).

In one embodiment of the present invention, the method for manufacturing the planarised reflective layer further comprises patterning a third mask over the reflective layer 202 and selectively removing or etching the reflective material not covered by any of the third mask to form a micromirror structure as shown in FIG. 3F.

Since the present invention comprises directly planarising the reflective layer 202, there is no requirement for amorphous Silicon spacers as in conventional fabrication methods. This reduces manufacturing cost, improves manufacturing yield and reduces interfacial stress on the reflective layer 202 of the micromirror device.

While illustrative embodiments have been illustrated and described, it will be appreciated that various changes can be made therein without departing from the spirit and scope of the invention.