3D NAND memory device and method of forming the same | Patent Number 10950623

US 10950623 B2
Application Number16365725
Publication NumberUS 20200185408 A1
Pendency1 year, 11 months, 25 days
Filled DateMar 27, 2019
Priority DateDec 7, 2018
Publication DateJun 11, 2020
Expiration DateDec 6, 2038
Inventor/ApplicantsYali Song
Ming WANG
Li Hong XIAO
Yali SONG
Li Hong Xiao
Ming Wang
ExaminesAUDUONG, GENE NGHIA
Art Unit2825
Technology Center2800
Assignments
Yangtze Memory Technologies Co. Ltd.
Current
Yangtze Memory Technologies Co. Ltd.
Original
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