Multiple-stack three-dimensional memory device and fabrication method thereof | Patent Number 10868031

US 10868031 B2
Application Number16126919
Publication NumberUS 20200035699 A1
Pendency2 years, 3 months, 7 days
Filled DateSep 10, 2018
Priority DateJul 27, 2018
Publication DateJan 30, 2020
Expiration DateJul 26, 2038
Inventor/ApplicantsZhao Hui Tang
Li Hong Xiao
Yu Ting Zhou
Zhenyu Lu
Qian Tao
Yushi Hu
Zongliang Huo
Jun Liu
Zhaosong Li
Jun LIU
Sizhe Li
ExaminesNIKMANESH, SEAHVOSH J
Art Unit2812
Technology Center2800
Assignments
Yangtze Memory Technologies Co. Ltd.
Current
Yangtze Memory Technologies Co. Ltd.
Original
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