The gate driving portion GP may be connected to the plurality of scan lines SL1 to SLn, may generate a gate signal in response to a gate driving control signal GCS from the control portion CP, and may sequentially supply the gate signal to the scan lines SL1 to SLn. When the gate signal is sequentially supplied to the scan lines SL1 to SLn, the sub-pixels PX may be selected in row units (e.g., in a unit of a row). Each of the data lines DL1 to DLm may transmit a data signal DATA to the sub-pixels PX in a selected row. The scan lines SL1 to SLn may be connected to a gate of a transistor included in the sub-pixel PX. The gate signal may be a gate control signal for controlling the turning on and turning off of the transistor connected to the scan line. The gate signal may be a square wave signal repeatedly including an on voltage for turning on the transistor and an off voltage for turning off the transistor.

The data driving portion DP may convert an image signal to a data signal DATA in the form of a voltage or a current, according to a data driving control signal DCS input from the control portion CP.

The control portion CP may generate the data driving control signal DCS and the gate driving control signal GCS according to synchronization signals supplied from the outside. The control portion CP may output the data driving control signal DCS to the data driving portion DP, and may output the gate driving control signal GCS to the gate driving portion GP.

The gate driving portion GP and the control portion CP may be formed (e.g., may be directly formed) on a substrate. The data driving portion DP may be disposed on a flexible printed circuit board (FPCB) electrically connected to a pad arranged at a side of a substrate. According to another embodiment, the data driving portion DP may be disposed (e.g., may be directly disposed) on a substrate as a chip on glass (COG) or a chip on plastic (COP).

FIG. 2 is a schematic plan view of the display panel 10 according to an embodiment.

As illustrated in FIG. 2, the display panel 10 may include the display area DA, and the peripheral area PA outside the display area DA. FIG. 2 illustrates that the display area DA has a rectangular shape. However, the present disclosure is not limited thereto. The display area DA may have other suitable shapes, such as a circular shape, an oval shape, a polygonal shape, a shape of a figure (e.g., a predetermined figure), or the like.

The display area DA may be where an image is displayed, and the plurality of sub-pixels PX may be arranged in the display area DA. Each sub-pixel PX may include a display device, such as an organic light-emitting diode. Each sub-pixel PX may emit, for example, red, green, or blue light. The sub-pixel PX may be connected to a pixel circuit including a thin-film transistor, a storage capacitor, and/or the like. The pixel circuit may be connected to a scan line SL that transmits a scan signal, a data line DL crossing the scan line SL and that transmits a data signal, a driving voltage line PL that supplies a driving voltage, and/or the like. For example, the data line DL and the driving voltage line PL may extend in the y-axis direction (e.g., a first direction), and the scan line SL may extend in the x-axis direction (e.g., a second direction).

The sub-pixel PX may emit light having a desired brightness corresponding to an electrical signal from the pixel circuit electrically connected to the sub-pixel PX. The display area DA may display an image (e.g., a certain or predetermined image) through the light emitted from the sub-pixel PX. For example, the sub-pixel PX may be defined as an emission area for emitting light of any one color of red, green, or blue light.

The peripheral area PA is where the sub-pixel PX is not arranged, and may be where an image is not displayed. A power supply line or the like to drive the sub-pixel PX may be arranged in the peripheral area PA. Also, pads may be arranged in the peripheral area PA, and a PCB including the driving circuit portion or an IC device, such as a driver IC, may be electrically connected to the pads in the peripheral area PA.

For example, the display panel 10 may include a substrate 100 (e.g., see FIG. 3), and thus, the substrate 100 may be understood as including the display area DA and the peripheral area PA. The substrate 100 will be described in more detail below.

A plurality of transistors may be arranged in the display area DA. According to a kind of (e.g., an N type or a P type) and/or an operation condition of the plurality of transistors, a first terminal of the transistor may be a source electrode or a drain electrode, and a second terminal of the transistor may be a different electrode from the first terminal. For example, when the first terminal is a source electrode, the second terminal may be a drain electrode.

Hereinafter, an organic light-emitting display apparatus is described in more detail as a representative example of a display apparatus according to an embodiment. However, the present disclosure is not limited thereto. According to another embodiment, the display apparatus may include an inorganic light-emitting display apparatus, an inorganic electroluminescent (EL) display apparatus, or a quantum dot light-emitting display apparatus. In other words, an emission layer of a display device included in the display apparatus may include an organic material or an inorganic material. Also, the display apparatus may include the emission layer, and quantum dots located on a path of light emitted from the emission layer.

FIG. 3 is a schematic cross-sectional view of a portion of the display apparatus of FIG. 1.

As described above, the substrate 100 may include areas corresponding to the display area DA, and the peripheral area PA outside the display area DA. The substrate 100 may include various suitable flexible or bendable materials. For example, the substrate 100 may include glass, a metal, or one or more polymer resins. For example, the polymer resins may include polyethersulphone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

However, the present disclosure is not limited thereto. For example, the substrate 100 may have a multi-layered structure including two layers, each including one or more of the polymer resins described above, and a barrier layer disposed between the two layers and including an inorganic material (e.g., such as silicon oxide, silicon nitride, silicon oxynitride, or the like).

A first barrier layer 101a may be disposed on the substrate 100. The first barrier layer 101a may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the substrate 100 and a lower metal layer 110 (or a second barrier layer 101b). The first barrier layer 101a may have a suitable shape corresponding to the entire or substantially entire surface of the substrate 100, and may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). The first barrier layer 101a may prevent or substantially prevent a diffusion of impurity ions, may prevent or substantially prevent penetration of moisture or external substances, and may planarize or substantially planarize a surface.

The lower metal layer 110 may be disposed on the first barrier layer 101a. The lower metal layer 110 may be disposed below (e.g., disposed under) a first semiconductor layer 120a, and may include at least one metal from among Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Ti, W, and/or Cu. For example, in a plan view, at least a portion of the lower metal layer 110 may overlap with at least a portion of the first semiconductor layer 120a. For example, in a plan view, at least a portion of the lower metal layer 110 may overlap with at least a portion of a first gate layer 130.

The second barrier layer 101b may be disposed on the lower metal layer 110. The second barrier layer 101b may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the first barrier layer 101a and a buffer layer 101c. The second barrier layer 101b may have a suitable shape corresponding to the entire or substantially entire surface of the substrate 100, and may be formed by CVD or ALD. The second barrier layer 101b may prevent or substantially prevent diffusion of impurity ions, may prevent or substantially prevent penetration of moisture or external substances, and may planarize or substantially planarize a surface.

The buffer layer 101c may be disposed on the second barrier layer 101b. The buffer layer 101c may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the second barrier layer 101b and the first semiconductor layer 120a. The buffer layer 101c may planarize or substantially planarize a surface, and may control a heat provision speed during a crystallization process for forming the first semiconductor layer 120a, so that the first semiconductor layer 120a may be uniformly or substantially uniformly crystallized.

The first semiconductor layer 120a may be disposed on the buffer layer 101c. The first semiconductor layer 120a may include polysilicon (e.g., a low-temperature polycrystalline silicon (LTPS)), and may include a channel area that is not doped with impurities and a source area and a drain area that are doped with impurities at both sides (e.g., opposite sides) of the channel area. The impurities may vary according to the kind of thin-film transistor, and may include N-type impurities or P-type impurities.

A first gate insulating layer 102a may be disposed on the first semiconductor layer 120a. The first gate insulating layer 102a may have an insulating property between the first semiconductor layer 120a and the first gate layer 130. The first gate insulating layer 102a may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the first semiconductor layer 120a and the first gate layer 130. The first gate insulating layer 102a may have a suitable shape corresponding to the entire or substantially entire surface of the substrate 100, and may have contact holes in a portion (e.g., in a predetermined portion) thereof. The first gate insulating layer 102a may be formed by CVD or ALD.

The first gate layer 130 may be disposed on the first gate insulating layer 102a. The first gate layer 130 may be disposed above the first semiconductor layer 120a to overlap with the first semiconductor layer 120a, and may include at least one metal from among Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Ti, W, and/or Cu.

A second gate insulating layer 102b may be disposed on the first gate layer 130. The second gate insulating layer 102b may have an insulating property between the first gate layer 130 and a second gate layer 140. The second gate insulating layer 102b may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the first gate layer 130 and the second gate layer 140. The second gate insulating layer 102b may have a suitable shape corresponding to the entire or substantially the entire surface of the substrate 100, and may have contact holes in a portion (e.g., in a predetermined portion) thereof. The second gate insulating layer 102b may be formed by CVD or ALD.

The second gate layer 140 may be disposed on the second gate insulating layer 102b. In a plan view, the second gate layer 140 may be disposed above the first gate layer 130 and/or a second semiconductor layer 120b to overlap with the first gate layer 130 and/or the second semiconductor layer 120b, and may include at least one metal from among Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Ti, W, and/or Cu. The display panel 10 may further include another gate layer disposed on a different layer.

A first interlayer insulating layer 103a may be disposed on the second gate layer 140. The first interlayer insulating layer 103a may cover the second gate layer 140. The first interlayer insulating layer 103a may include an inorganic material. For example, the first interlayer insulating layer 103a may include a metal oxide or a metal nitride. In more detail, the inorganic material may include silicon oxide (SiO₂), silicon nitride (SiN_x), silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (TA₂O₅), hafnium oxide (HfO₂), zinc oxide (ZnO₂), or the like. For example, the first interlayer insulating layer 103a may have a dual structure of SiO_x/SiN_yor SiN_x/SiO_y.

The second semiconductor layer 120b may be disposed on the first interlayer insulating layer 103a. The second semiconductor layer 120b may include polysilicon (e.g., LTPS) or an oxide semiconductor layer (e.g., IGZO, IZO, and/or the like). The second semiconductor layer 120b may include a channel area, which is not doped with impurities, and a source area and a drain area, which are doped with impurities at both sides (e.g., opposite sides) of the channel area. For example, when the second semiconductor layer 120b includes polysilicon, the impurities may vary according to the kind of thin-film transistor, and may include N-type impurities or P-type impurities. For example, when the second semiconductor layer 120b is an oxide semiconductor layer, the second semiconductor layer 120b may generally include a P-type semiconductor layer.

A third gate insulating layer 102c may be disposed on the second semiconductor layer 120b. The third gate insulating layer 102c may have an insulating property between the second semiconductor layer 120b and a third gate layer 150. The third gate insulating layer 102c may include an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be disposed between the second semiconductor layer 120b and the third gate layer 150. The third gate insulating layer 102c may overlap with a portion of the second semiconductor layer 120b. Alternatively, the third gate insulating layer 102c may have a suitable shape corresponding to the entire or substantially the entire surface of the substrate 100, and may have contact holes in a portion (e.g., in a predetermined portion) thereof. The third gate insulating layer 102c may be formed by CVD or ALD.

The third gate layer 150 may be disposed on the third gate insulating layer 102c. The third gate layer 150 may be disposed above the second semiconductor layer 120b to overlap with the second semiconductor layer 120b, and may include at least one metal from among Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Ti, W, and/or Cu.

A second interlayer insulating layer 103b may be disposed on the third gate layer 150. The second interlayer insulating layer 103b may cover the third gate layer 150 and/or the first interlayer insulating layer 103a. The second interlayer insulating layer 103b may include an inorganic material. For example, the second interlayer insulating layer 103b may include a metal oxide or a metal nitride. In more detail, the inorganic material may include SiO₂, SiN_x, SiON, Al₂O₃, TiO₂, Ta₂O₅, HfO₂, or ZnO₂. For example, the second interlayer insulating layer 103b may have a dual structure of SiO_x/SiN_yor SiN_x/SiO_y.

A first conductive layer 160 may be disposed on the second interlayer insulating layer 103b. The first conductive layer 160 may perform a function of (e.g., may include or be) an electrode connected to the source area and the drain area of the first semiconductor layer 120a and/or the second semiconductor layer 120b through a via-hole in the second interlayer insulating layer 103b and/or a via-hole in the first interlayer insulating layer 103a and the second interlayer insulating layer 103b.

The first conductive layer 160 may include one or more metals selected from among Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and/or Cu. For example, the first conductive layer 160 may include a Ti layer, an Al layer, and/or a Cu layer. For example, the first conductive layer 160 may include a Ti/Al/Ti structure.

A first organic insulating layer 104a may be disposed on the first conductive layer 160. The first organic insulating layer 104a may cover an upper portion of the first conductive layer 160, and may have an approximately flat upper surface to serve as a planarization layer. The first organic insulating layer 104a may include, for example, an organic material, such as acryl, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). The first organic insulating layer 104a may include a single layer or a plurality of layers, and may be variously modified as needed or desired.

A second conductive layer 170 may be disposed on the first interlayer insulating layer 104a. The second conductive layer 170 may be connected, through a via-hole in the first organic insulating layer 104a, to a portion of a first conductive layer 160 that is connected to the first semiconductor layer 120a, so as to perform a function of (e.g., to include or be) an electrode.

The second conductive layer 170 may include one or more metals selected from among Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and/or Cu. For example, the second conductive layer 170 may include a Ti layer, an Al layer, and/or a Cu layer. For example, the second conductive layer 170 may include a Ti/Al/Ti structure.

The display panel 10 may further include another conductive layer disposed on a different layer from the first and second conductive layers 160 and 170, and the other conductive layer may be, for example, a line layer to perform a function of (e.g., including or being) a line.

A second organic insulating layer 104b may be disposed on the second conductive layer 170. The second organic insulating layer 104b may cover an upper portion of the second conductive layer 170, and may have an approximately flat upper surface to serve as a planarization layer. The second organic insulating layer 104b may include, for example, an organic material, such as acryl, BCB, or HMDSO. The second organic insulating layer 104b may include a single layer or multiple layers, and may be variously modified as needed or desired.

A pixel electrode layer 181 may be disposed on the second organic insulating layer 104b. The pixel electrode layer 181 may be connected to the second conductive layer 170 through a contact hole formed in the second organic insulating layer 104b. A display device may include the pixel electrode realized for each sub-pixel through the pixel electrode layer 181. For example, a light-emitting diode, such as an organic light-emitting diode, may be used as the display device. For example, an organic light-emitting diode may further include an intermediate layer 182, and the intermediate layer 182 may be disposed on a pixel electrode realized for each sub-pixel through the pixel electrode layer 181. For example, the pixel electrode layer 181 may include a transmissive conductive layer including a transmissive conductive oxide, such as ITO, In₂O₃, or IZO, and/or a reflective layer including a metal, such as Al or Ag. For example, the pixel electrode layer 181 may have a triple-layered structure of ITO/Ag/ITO.

A pixel-defining layer 105 may be disposed above the second organic insulating layer 104b, and may be disposed to cover an edge of the pixel electrode realized for each sub-pixel through the pixel electrode layer 181. For example, the pixel-defining layer 105 may cover the edge of the pixel electrode realized for each sub-pixel. The pixel-defining layer 105 may have an opening portion corresponding to the sub-pixel, and the opening portion may be formed to expose at least a central portion of the pixel electrode realized for each sub-pixel. The opening portion may be defined by the pixel-defining layer 105.

For example, the pixel-defining layer 105 may include, for example, an organic material, such as polyimide or HMDSO. In some embodiments, a spacer may be disposed on the pixel-defining layer 105. The spacer may be located in the peripheral area PA, but the present disclosure is not limited thereto, and the spacer may be located in the display area DA. The spacer may prevent or substantially prevent damage to the organic light-emitting diode, which may be caused by a sagging of a mask in a manufacturing process using the mask. The spacer may include an organic insulating material, and may include a single layer or multiple layers.

The display device may further include an opposite electrode 183. The intermediate layer 182 and the opposite electrode 183 may be disposed in the opening portion. The intermediate layer 182 may include a low molecular-weight material or a high molecular-weight material. When the intermediate layer 182 includes a low molecular-weight material, the intermediate layer 182 may include a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and/or an electron injection layer. When the intermediate layer 182 includes a high-molecular-weight material, the intermediate layer 182 may generally have a structure including a hole transport layer and an emission layer.

The structure of the intermediate layer 182 is not limited thereto, and may be variously modified as needed or desired. For example, at least one of the layers included in the intermediate layer 182 may be integrally formed (e.g., may be commonly formed) like the opposite electrode 183. According to another embodiment, the intermediate layer 182 may include layers (patterns) that are patterned to respectively correspond to the plurality of pixel electrodes.

The opposite electrode 183 may include a transmissive conductive layer including a transmissive conductive oxide, such as ITO, In₂O₃, or IZO. The pixel electrode may be used as an anode, and the opposite electrode 183 may be used as a cathode. However, the polarities of the electrodes may be the opposite from that described above.

The opposite electrode 183 may be disposed in an upper region of the display area DA, and may be disposed across the entire or substantially the entire surface of the display area DA. The opposite electrode 183 may be integrally formed to cover the plurality of pixel electrodes. The opposite electrode 183 may be electrically connected to a common power supply line arranged in the peripheral area PA. For example, in some embodiments, the opposite electrode 183 may extend to a partition wall.

A first thin-film transistor TFT1 may include the first semiconductor layer 120a described above. The first thin-film transistor TFT1 may include a p-type metal-oxide-semiconductor (pMOS) or an n-type metal-oxide semiconductor (nMOS) according to the kind of the first semiconductor layer 120a. For example, the first thin-film transistor TFT1 may include at least one of a driving thin-film transistor T1 (e.g., see FIGS. 4, 5, and 6), a switching thin-film transistor T2, a first emission control thin-film transistor T5, a second emission control thin-film transistor T6, or a bias thin-film transistor T7.

A second thin-film transistor TFT2 may include the second semiconductor layer 120b described above. The second semiconductor layer 120b of the second thin-film transistor TFT2 may include an oxide semiconductor, and according to the characteristic of the oxide semiconductor, the second thin-film transistor TFT2 may include an nMOS. For example, the second thin-film transistor TFT2 may include at least one of a compensation thin-film transistor T3 (e.g., see FIG. 4) or an initialization thin-film transistor T4. In some embodiments, the second semiconductor layer 120b may include LTPS (e.g., refer to the pixel circuit of FIG. 6).

FIG. 4 is a schematic equivalent circuit diagram of an example of a pixel circuit of the display panel 10 of FIG. 1.

As illustrated in FIG. 4, the pixel circuit may include a plurality of thin-film transistors, a storage capacitor Cst, an organic light-emitting diode OLED, and various lines.

For example, the pixel circuit may have a 7T1C (e.g., seven transistor-one capacitor) structure including seven thin-film transistors and one capacitor. The seven thin-film transistors may receive a control signal from the gate driving portion GP of FIG. 1, and may be turned on or turned off according to the control signal.

The pixel circuit may include the driving thin-film transistor T1. The driving thin-film transistor T1 may receive a data signal DATA, and may transmit a driving current loled (e.g., which may be interchangeably represented as I_DSin FIGS. 9, 10, and the like) to the organic light-emitting diode OLED based on the data signal DATA. For example, the driving thin-film transistor T1 may have a dual-gate structure having two gate electrodes. For example, the driving thin-film transistor T1 may include a pMOS thin-film transistor and an LTPS thin-film transistor.

The driving thin-film transistor T1 may include a 1a gate electrode T1_G1, a 1b gate electrode T1_G2, a 1a source-drain electrode T1_SD1, and a 1b source-drain electrode T1_SD2. In a cross-sectional view, the first semiconductor layer 120a (e.g., see FIG. 3) may be disposed between the 1a gate electrode T1_G1 and the 1b gate electrode T1_G2, and the first semiconductor layer 120a may include, for example, LTPS. In a cross-sectional view, the 1a gate electrode T1_G1 may be disposed above the 1b gate electrode T1_G2. For example, the 1a gate electrode T1_G1 may perform a function of an upper gate in the dual-gate structure, and the 1b gate electrode T1_G2 may perform a function of a lower gate in the dual-gate structure.

For example, in the 7T1C structure, the driving thin-film transistor T1 may be electrically connected to the storage capacitor Cst, the switching thin-film transistor T2, the first emission control thin-film transistor T5, the second emission control thin-film transistor T6, the bias thin-film transistor T7, the compensation thin-film transistor T3, and the initialization thin-film transistor T4.

The 1a gate electrode T1_G1 may be electrically connected to the storage capacitor Cst. The 1a gate electrode T1_G1 may be electrically connected to a first electrode CE1 of the storage capacitor Cst. The 1a gate electrode T1_G1 may be electrically connected to a first node ND1 described in more detail below. The 1a gate electrode T1_G1 may be electrically connected to the compensation thin-film transistor T3 and the initialization thin-film transistor T4 described in more detail below. For example, an initialization voltage Vinit may be transmitted to the 1a gate electrode T1_G1 according to an on/off operation of the initialization thin-film transistor T4.

The 1b gate electrode T1_G2 may be electrically connected to the bias thin-film transistor T7 described in more detail below. Thus, a bias voltage Vbias may be transmitted to the 1b gate electrode T1_G2 according to an on/off operation of the bias thin-film transistor T7. For example, when the driving thin-film transistor T1 is a pMOS thin-film transistor, the bias voltage Vbias may have a positive magnitude.

The 1a source-drain electrode T1_SD1 may be electrically connected to a power voltage line PL1 configured to transmit a power voltage ELVDD. In some embodiments, the first emission control thin-film transistor T5 described in more detail below may be electrically connected between the 1a source-drain electrode T1_SD1 and a power line (e.g., the power voltage line PL1). For example, the power voltage ELVDD may be transmitted to the 1a source-drain electrode T1_SD1 according to an on/off operation of the first emission control thin-film transistor T5.

The 1a source-drain electrode T1_SD1 may receive the data signal DATA through the switching thin-film transistor T2. For example, the data signal DATA may be transmitted to the 1a source-drain electrode T1_SD1 according to an on/off operation of the switching thin-film transistor T2.

The 1b source-drain electrode T1_SD2 may transmit the driving current loled to the organic light-emitting diode OLED through the second emission control thin-film transistor T6. For example, the driving current loled may be transmitted to the organic light-emitting diode OLED according to an on/off operation of the second emission control thin-film transistor T6.

The storage capacitor Cst may include the first electrode CE1 electrically connected to the 1a gate electrode T1_G1, and a second electrode CE2 electrically connected to the power line (e.g., the power voltage line PL1). The first electrode CE1 may be electrically connected to the first node ND1. The first node ND1 may be electrically connected to the 1a gate electrode T1_G1 of the driving thin-film transistor T1, a 3b source-drain electrode T3_SD2 of the compensation thin-film transistor T3, a 4b source-drain electrode T4_SD2 of the initialization thin-film transistor T4, a 6b source-drain electrode T6_SD2 of the second emission control thin-film transistor T6, and the organic light-emitting diode OLED. Thus, the expression “being electrically connected to the first node ND1” may denote being electrically connected to at least one of the other components electrically connected to the first node ND1.

The second electrode CE2 of the storage capacitor Cst may be electrically connected to the power voltage line PL1 configured to transmit the power voltage ELVDD. The power voltage line PL1 may be electrically connected to a 5a source-drain electrode T5_SD1 of the first emission control thin-film transistor T5 described in more detail below.

The switching thin-film transistor T2 may transmit the data signal DATA to the driving thin-film transistor T1. As such, a 2a gate electrode T2_G1 of the switching thin-film transistor T2 may receive a data control signal GW from the gate driving portion GP described above with reference to FIG. 1. A 2a source-drain electrode T2_SD1 of the switching thin-film transistor T2 may be electrically connected to a data line DL configured to transmit the data signal DATA. A 2b source-drain electrode T2_SD2 of the switching thin-film transistor T2 may be electrically connected to the driving thin-film transistor T1. The 2b source-drain electrode T2_SD2 of the switching thin-film transistor T2 may be electrically connected to the 1a source-drain electrode T1_SD1 of the driving thin-film transistor T1. The 2a source-drain electrode T2_SD1 and the 2b source-drain electrode T2_SD2 may be formed on the first semiconductor layer 120a, and the first semiconductor layer 120a may include, for example, LTPS. For example, the data signal DATA may be transmitted to the driving thin-film transistor T1 according to an on/off operation of the switching thin-film transistor T2.

The compensation thin-film transistor T3 may be used for a compensation operation of a threshold voltage of the driving thin-film transistor T1. A 3a source-drain electrode T3_SD1 of the compensation thin-film transistor T3 may be electrically connected to the 1b source-drain electrode T1_SD2 of the driving thin-film transistor T1, and the 3b source-drain electrode T3_SD2 of the compensation thin-film transistor T3 may be electrically connected to the first node ND1. A 3a gate electrode T3_G1 of the compensation thin-film transistor T3 may receive a compensation control signal from the gate driving portion GP described above with reference to FIG. 1. The compensation thin-film transistor T3 may be turned on or turned off based on the compensation control signal GC, and the on/off operation of the compensation thin-film transistor T3 may be used for the compensation operation of the threshold voltage of the driving thin-film transistor T1. The 3a source-drain electrode T3_SD1 and the 3b source-drain electrode T3_SD2 may be formed on the second semiconductor layer 120b (e.g., also see FIG. 3), and the second semiconductor layer 120b may include, for example, an oxide semiconductor.

The initialization thin-film transistor T4 may include a 4a gate electrode T4_G1, a 4b gate electrode T4_G2, the 4a source-drain electrode T4_SD1, and a 4b source-drain electrode T4_SD2. In a cross-sectional view, the second semiconductor layer 120b may be disposed between the 4a gate electrode T4_G1 and the 4b gate electrode T4_G2, and the second semiconductor layer 120b may include, for example, an oxide semiconductor. In the cross-sectional view, the 4a gate electrode T4_G1 may be disposed above the 4b gate electrode T4_G2. For example, the 4a gate electrode T4_G1 may perform a function of an upper gate in the dual-gate structure, and the 4b gate electrode T4_G2 may perform a function of a lower gate in the dual-gate structure.

The initialization thin-film transistor T4 may transmit the initialization voltage Vinit to the storage capacitor Cst. The 4a source-drain electrode T4_SD1 of the initialization thin-film transistor T4 may be electrically connected to an initialization voltage line PL2 configured to transmit the initialization voltage Vinit. The 4b source-drain electrode T4_SD2 of the initialization thin-film transistor T4 may be electrically connected to the first node ND1. The 4a source-drain electrode T4_SD1 and the 4b source-drain electrode T4_SD2 may be formed on the second semiconductor layer 120b, and the second semiconductor layer 120b may include, for example, an oxide semiconductor.

The 4a gate electrode T4_G1 of the initialization thin-film transistor T4 may receive an initialization control signal GI from the gate driving portion GP described above with reference to FIG. 1. The initialization thin-film transistor T4 may be turned on or turned off based on the initialization control signal GI, and the initialization voltage Vinit may be transmitted to the storage capacitor Cst according to the on/off operation of the initialization thin-film transistor T4.

The 4b gate electrode T4_G2 of the initialization thin-film transistor T4 may be electrically connected to the bias thin-film transistor T7 described in more detail below. Thus, the bias voltage Vbias may be transmitted to the 4b gate electrode T4_G2 according to an on/off operation of the bias thin-film transistor T7.

A 5a source-drain electrode T5_SD1 of the first emission control thin-film transistor T5 may be electrically connected to the power voltage line PL1 configured to transmit the power voltage ELVDD. A 5b source-drain electrode T5_SD2 of the first emission control thin-film transistor T5 may be electrically connected to the 1a source-drain electrode T1_SD1 of the driving thin-film transistor T1. The 5b source-drain electrode T5_SD2 of the first emission control thin-film transistor T5 may be electrically connected to the 2b source-drain electrode T2_SD2 of the switching thin-film transistor T2. A 5a gate electrode T5_G1 of the first emission control thin-film transistor T5 may receive an emission control signal EM from the gate driving portion GP described above with reference to FIG. 1. The first emission control thin-film transistor T5 may be turned on or turned off based on the emission control signal EM, and the power voltage ELVDD may be transmitted to the driving thin-film transistor T1 according to the on/off operation of the first emission control thin-film transistor T5.

The second emission control thin-film transistor T6 may include a 6a source-drain electrode T6_SD1, the 6b source-drain electrode T6_SD2, and a 6a gate electrode T6_G1. The 6a source-drain electrode T6_SD1 may be electrically connected to the 1b source-drain electrode T1_SD2 of the driving thin-film transistor T1. The 6a source-drain electrode T6_SD1 may be electrically connected to the 3a source-drain electrode T3_SD1 of the compensation thin-film transistor T3. The 6b source-drain electrode T6_SD2 may be electrically connected to the organic light-emitting diode OLED. The 6b source-drain electrode T6_SD2 may be electrically connected to the first node ND1. The 6a source-drain electrode T6_SD1 and the 6b source-drain electrode T6_SD2 may be formed on the first semiconductor layer 120a, and the first semiconductor layer 120a may include, for example, LTPS.

The 6a gate electrode T6_G1 of the second emission control thin-film transistor T6 may receive an emission control signal EM from the gate driving portion GP described above with reference to FIG. 1. For example, the emission control signal EM transmitted to the 6a gate electrode T6_G1 may be the same as the control signal transmitted to the first emission control thin-film transistor T5. The second emission control thin-film transistor T6 may be turned on or turned off based on the emission control signal EM, and the driving current loled may be transmitted to the organic light-emitting diode OLED according to the on/off operation of the second emission control thin-film transistor T6.

The bias thin-film transistor T7 may include a 7a source-drain electrode T7_SD1, a 7b source-drain electrode T7_SD2, and a 7a gate electrode T7_G1. The 7b source-drain electrode T7_SD2 may be electrically connected to the 1b gate electrode T1_G2 of the driving thin-film transistor T1. The 7a source-drain electrode T7_SD1 may be electrically connected to a bias voltage line PL4 configured to transmit the bias voltage Vbias. The 7a source-drain electrode T7_SD1 and the 7b source-drain electrode T7_SD2 may be formed on the first semiconductor layer 120a, and the first semiconductor layer 120a may include, for example, LTPS.

The 7a gate electrode T7_G1 may receive a bias control signal EB from the gate driving portion GP described above with reference to FIG. 1. The bias thin-film transistor T7 may be turned on or turned off based on the bias control signal EB, and the bias voltage Vbias may be transmitted to the 1b gate electrode T1_G2 of the driving thin-film transistor T1 according to the on/off operation of the bias thin-film transistor T7.

The organic light-emitting diode OLED may be connected (e.g., may be directly connected) to the first node ND1 and the second emission control thin-film transistor T6. The organic light-emitting diode OLED may include an anode AE, and the anode AE may be connected (e.g., may be directly or electrically connected) to the second emission control thin-film transistor T6. It may be understood that the anode AE may be electrically connected to other elements of the pixel circuit through the first node ND1 and the second emission control thin-film transistor T6. The anode AE may be electrically connected to the driving thin-film transistor T1 (e.g., through the first node ND1 or the second emission control thin-film transistor T6). The organic light-emitting diode OLED may be electrically connected to a second power voltage line PL3 configured to transmit a second power voltage ELVSS. In more detail, the organic light-emitting diode OLED may further include a cathode, and the cathode may be electrically connected to the second power voltage line PL3. For example, in the cross-sectional view, an organic material layer that emits light when a current flows may be disposed between the anode AE and the cathode.

The pixel circuit according to an embodiment may include the driving thin-film transistor T1, the storage capacitor Cst, the bias thin-film transistor T7, and the organic light-emitting diode OLED. The driving thin-film transistor T1 may include the 1a gate electrode T1_G1, the 1b gate electrode T1_G2, and the first semiconductor layer 120a disposed, in a cross-sectional view, between the 1a gate electrode T1_G1 and the 1b gate electrode T1_G2. The storage capacitor Cst may include the first electrode CE1 electrically connected to the 1a gate electrode T1_G1, and the second electrode CE2 spaced apart from the first electrode CE1. The bias thin-film transistor T7 may include the 7b source-drain electrode T7_SD2 electrically connected to the 1b gate electrode T1_G2, and the 7a source-drain electrode T7_SD1 for receiving the bias voltage Vbias. The organic light-emitting diode OLED may include the anode AE electrically connected to the driving thin-film transistor T1. The 7a source-drain electrode T7_SD1 of the bias thin-film transistor T7 may be electrically connected to the bias voltage line PL4 configured to transmit the bias voltage Vbias.

According to an embodiment, when the bias thin-film transistor T7 is turned on, the bias voltage Vbias may be applied to the 1b gate electrode T1_G2.

According to an embodiment, the driving thin-film transistor T1 may have a threshold voltage, and when the bias voltage Vbias is applied to the 1b gate electrode T1_G2, the threshold voltage may be shifted by the bias voltage Vbias.

According to an embodiment, the driving thin-film transistor T1 may be a pMOS thin-film transistor, and the bias voltage Vbias may be a positive number (e.g., a positive voltage).

According to an embodiment, the initialization thin-film transistor T4 electrically connected to the first electrode CE1 may further be provided.

According to an embodiment, the initialization thin-film transistor T4 may include the second semiconductor layer 120b including an oxide semiconductor.

According to an embodiment, the 4b source-drain electrode T4_SD2 of the initialization thin-film transistor T4 may be electrically connected to the anode AE of the organic light-emitting diode OLED.

According to an embodiment, the 4b source-drain electrode T4_SD2 may be electrically connected to the first electrode CE1.

According to an embodiment, the 4a source-drain electrode T4_SD1 of the initialization thin-film transistor T4 may be electrically connected to the initialization voltage line PL2 configured to transmit the initialization voltage Vinit.

According to an embodiment, the initialization thin-film transistor T4 may include the 4a gate electrode T4_G1, the 4b gate electrode T4_G2, and the second semiconductor layer 120b disposed, in the cross-sectional view, between the 4a gate electrode T4_G1 and the 4b gate electrode T4_G2.

According to an embodiment, the 7b source-drain electrode T7_2 may be electrically connected to the 4b gate electrode T4_G2.

According to an embodiment, when the bias thin-film transistor T7 is turned on, the bias voltage Vbias may be applied to the 1b gate electrode T1_G2 and the 4b gate electrode T4_G2.

According to an embodiment, when the initialization thin-film transistor T4 is turned on according to the bias voltage Vbias, the anode AE may be initialized.

According to an embodiment, the initialization thin-film transistor T4 may include an NMOS thin-film transistor.

According to an embodiment, the initialization thin-film transistor T4 may include a PMOS thin-film transistor, the bias thin-film transistor T7 may be turned on or turned off according to the control signal, and the 4b gate electrode T4_G2 may be receive the control signal.

According to an embodiment, the second electrode CE2 may be electrically connected to the power line configured to transmit the power voltage ELVDD.

The pixel circuit according to an embodiment may further include the switching thin-film transistor T2 electrically connected to the 1a source-drain electrode T1_SD1 of the driving thin-film transistor T1, the first emission control thin-film transistor T5 electrically connecting the power line to the driving thin-film transistor T1, and the second emission control thin-film transistor T6 electrically connecting the anode AE to the driving thin-film transistor T1.

FIG. 5 is a timing diagram of control signals respectively transmitted to the thin-film transistors of the pixel circuit of FIG. 4.

As illustrated in FIG. 5, the emission control signal EM, the initialization control signal GI, the data control signal GW, the compensation control signal GC, and the bias control signal EB may be applied to the pixel circuit. According to a type by which the control signal is applied, operations of driving the pixel circuit may be described. For example, for pMOS thin-film transistor, when the control signals of FIG. 5 rise, the control signals may be off signals, and when the control signals of FIG. 5 fall, the control signals may be on signals. And for NMOS thin-film transistor, when the control signals of FIG. 5 fall, the control signals may be off signals, and when the control signals of FIG. 5 rise, the control signals may be on signals. Hereinafter, other control signals than the control signal described in each operation may be the off signals.

In a first operation (e.g., section {circle around (1)} of FIG. 5), the initialization control signal GI may have an on level.

The first operation may be an operation in which the initialization control signal GI (e.g., only the initialization control signal GI) may have on level. The first operation may be for initializing the storage capacitor Cst. When the initialization control signal GI that rises is applied to the 4a gate electrode T4_G1 of the initialization thin-film transistor T4, the initialization thin-film transistor T4 may be turned on. When the initialization thin-film transistor T4 is turned on, the initialization voltage Vinit may be applied to the first electrode CE1 of the storage capacitor Cst, and thus, the storage capacitor Cst may be initialized.

In a second operation (e.g., section {circle around (2)} of FIG. 5), the data control signal GW and the compensation control signal GC may have on levels.

The second operation may be an operation in which the initialization control signal GI falls, and the data control signal GW falls and the compensation control signal GC rises. The second operation may be for writing a data signal DATA. When the data control signal GW that falls is applied to the 2a gate electrode T2_G1 of the switching thin-film transistor T2, the switching thin-film transistor T2 may be turned on. When the compensation control signal GC that rises is applied to the 3a gate electrode T3_G1 of the compensation thin-film transistor T3, the compensation thin-film transistor T3 and the driving thin-film transistor T1 may be turned on. When the switching thin-film transistor T2 and the driving thin-film transistor T1 are turned on, the data signal DATA may be applied to the driving thin-film transistor T1. When the data signal DATA is applied to the driving thin-film transistor T1, the magnitude of a current flowing through the driving thin-film transistor T1 may be changed based on the data signal DATA.

In a third operation (e.g., section {circle around (3)} of FIG. 5), the compensation control signal GC may have an on level.

The third operation may be an operation in which the data control signal GW rises, and the compensation control signal GC is still in a falling state. The third operation may be an operation for compensating for a threshold voltage. For example, the third operation may proceed during a time period that is about 5 μs or less.

When the data control signal GW that rises is applied to the 2a gate electrode T2_G1 of the switching thin-film transistor T2, the switching thin-film transistor T2 may be turned off. The compensation control signal GC is still in the rising state, and thus, the compensation thin-film transistor T3 and the driving thin-film transistor T1 may be in a turned-on state. When the compensation thin-film transistor T3 and the driving thin-film transistor T1 are still in the turned-on state, a compensation voltage based on the data signal DATA may be applied to the first electrode CE1 of the storage capacitor Cst. For example, the compensation voltage (e.g., “Vdata-Vth”, where Vdata indicates the data signal and Vth indicates the threshold voltage) having a magnitude obtained by subtracting a threshold voltage of the driving thin-film transistor T1 from the data signal DATA, may be applied to the first electrode CE1 of the storage capacitor Cst. The third operation may be an example of the compensation operation realized in the pixel circuit described above.

In a fourth operation (e.g., section {circle around (4)} of FIG. 5), the bias control signal EB may have an on level.

The fourth operation may be an operation in which the compensation control signal GC falls, and the bias control signal EB falls. The fourth operation may be an on-biasing operation. For example, the fourth operation may be an operation (e.g., a threshold voltage initialization operation) in which the bias voltage Vbias is applied to the 1b gate electrode T1_G2 to shift the threshold voltage.

When the bias control signal EB that falls is applied to the 7a gate electrode T7_G1, which is the upper gate electrode of the bias thin-film transistor T7, the bias thin-film transistor T7 may be turned on. When the bias thin-film transistor T7 is turned on, the bias voltage Vbias applied to the 7a source-drain electrode T7_SD1 of the bias thin-film transistor T7 may be transmitted to the 7b source-drain electrode T7_SD2 of the bias thin-film transistor T7.

When the bias voltage Vbias is transmitted to the 7b source-drain electrode T7_SD2, the bias voltage Vbias may be transmitted to the 1b gate electrode T1_G2, which is the lower gate electrode of the driving thin-film transistor T1 electrically connected to the 7b source-drain electrode T7_SD2. When the bias voltage Vbias is applied to the 1b gate electrode T1_G2 of the driving thin-film transistor T1, the threshold voltage of the driving thin-film transistor T1 may be initialized based on the characteristic of a dual gate.

For example, there may be trapped holes between a semiconductor layer and a gate insulating layer included in the driving thin-film transistor T1 of a pMOS type. The threshold voltage of the driving thin-film transistor T1 may be changed due to the trapped holes. The driving current loled flowing through the driving thin-film transistor T1 may also be changed (e.g., may be distorted) due to the changed threshold voltage, and the changed driving current loled may generate adverse effects on a display quality. In other words, it may be desired to initialize the threshold voltage of the driving thin-film transistor T1 that is changed by the trapped holes.

In order to transmit the trapped holes to the source area, a positive voltage (e.g., +6V or higher) may be applied to the lower gate electrode in the dual gate structure. When the positive voltage is applied, at least a portion of the trapped holes may be removed, and the effect of the trapped holes on the threshold voltage of the driving thin-film transistor T1 may be reduced or removed. As a result, the changed threshold voltage may be initialized. As the threshold voltage is initialized, the change (e.g., the distortion) of the driving current loled that may be caused by the change of the threshold voltage may be reduced, and the reduction of the change or the distortion of the driving current loled may be a significant effect obtained by using the bias thin-film transistor T7.

In the pixel circuit of FIG. 4, the 7b source-drain electrode T7_SD2 of the bias thin-film transistor T7 may be electrically connected to the 4b gate electrode T4_G2, which is the lower gate electrode of the initialization thin-film transistor T4. When the bias thin-film transistor T7 is turned on, the bias voltage Vbias may be transmitted to the 4b gate electrode T4_G2 of the initialization thin-film transistor T4. When the bias voltage Vbias is transmitted to the 4b gate electrode T4_G2 of the initialization thin-film transistor T4, the initialization thin-film transistor T4 may be turned on. When the initialization thin-film transistor T4 is turned on, the initialization voltage Vinit may be transmitted to the first node ND1 or the anode AE electrically connected to the first node ND1. The anode AE may be initialized by the initialization voltage Vinit. The initialization of the anode AE may denote the extinction of the hole or charges remaining in the anode AE by the initialization voltage Vinit.

For example, the initialization thin-film transistor T4 may be an nMOS type. When the initialization thin-film transistor T4 is an nMOS type, it may be desired to apply a positive voltage to the 4b gate electrode T4_G2, which is the lower gate electrode of the initialization thin-film transistor T4, in order to turn on the initialization thin-film transistor T4. Because the bias voltage Vbias is a positive voltage (e.g., 6V or higher), when the bias voltage Vbias is applied to the 4b gate electrode T4_G2, the initialization thin-film transistor T4 may be turned on.

Thus, the pixel circuit of FIG. 4 may perform the initialization of the threshold voltage of the driving thin-film transistor T1 and the initialization of the anode AE included in the organic light-emitting diode OLED, by using the operation of (e.g., by using only the operation of) the turning on of the bias thin-film transistor T7.

In a fifth operation (e.g., section {circle around (5)} of FIG. 5), the emission control signal EM may have an on level.

The fifth operation may be an operation in which the bias control signal EB rises, and the emission control signal EM falls. The fifth operation may be an emission operation. For example, the fifth operation may include an operation of applying a driving voltage (e.g., the power voltage ELVDD or the voltage difference between the power voltage ELVDD and the second power voltage ELVSS) to the driving thin-film transistor T1, and may be an operation of transmitting the driving current loled to the organic light-emitting diode OLED based on the shifted threshold voltage and the driving voltage described above.

The emission control signal EM that falls may be applied to the 5a gate electrode T5_G1 of the first emission control thin-film transistor T5 and the 6a gate electrode T6_G1 of the second emission control thin-film transistor T6. When the emission control signal EM that falls is applied to the 5a gate electrode T5_G1 and the 6a gate electrode T6_G1, the first emission control thin-film transistor T5 and the second emission control thin-film transistor T6 may be turned on. When the first emission control thin-film transistor T5 and the second emission control thin-film transistor T6 are turned on, the power voltage ELVDD may be applied to the driving thin-film transistor T1. Thus, the driving current loled generated by the power voltage ELVDD may flow through the driving thin-film transistor T1, and the driving current loled may be transmitted to the organic light-emitting diode OLED. The organic light-emitting diode OLED may emit light through the driving current loled.

A method of driving the pixel circuit, according to an embodiment, may include the first to fifth operations described above.

The method of driving the pixel circuit may be provided, according to an embodiment. The pixel circuit may include the plurality of thin-film transistors including the driving thin-film transistor T1, the storage capacitor Cst including the first electrode CE1 and the second electrode CE2, and the organic light-emitting diode OLED including the anode AE and for emitting light by receiving the driving current loled from the driving thin-film transistor T1. The driving thin-film transistor T1 may include the 1a gate electrode T1_G1 and the 1b gate electrode T1_G2 disposed below the 1a gate electrode T1_G1.

The method of driving the pixel circuit, according to an embodiment, may include shifting the threshold voltage of the driving thin-film transistor T1 by applying the bias voltage Vbias to the 1b gate electrode T1_G2, applying the driving voltage to the driving thin-film transistor T1, and transmitting the driving current loled to the organic light-emitting diode OLED based on the shifted threshold voltage and the driving voltage.

According to an embodiment, the plurality of thin-film transistors may further include the initialization thin-film transistor T4 electrically connected to the anode AE. The initialization thin-film transistor T4 may be an nMOS thin-film transistor and may include the 4a gate electrode T4_G1 and the 4b gate electrode T4_G2 disposed below the 4a gate electrode T4_G1. The shifting of the threshold voltage may include initializing the anode AE by applying the bias voltage Vbias simultaneously to the 1b gate electrode T1_G2 and the 4b gate electrode T4_G2.

FIG. 6A is a schematic equivalent circuit diagram of an example of a pixel circuit of the display panel 10 of FIG. 1.

Hereinafter with reference to FIG. 6A, redundant description of the aspects and features that are the same or substantially the same as those described above may not be repeated. For example, control signals for driving the pixel circuit illustrated in FIG. 6 may be provided to the thin-film transistors the same or substantially the same as those described above with reference to the timing diagram of FIG. 5.

As illustrated in FIG. 6A, the initialization thin-film transistor T4 may be a pMOS type. When the initialization thin-film transistor T4 is a pMOS type, the voltage applied to the 4b gate electrode T4_G2, which is the lower gate electrode, may fall, or the voltage applied to the 4b gate electrode T4_G2 may be a negative voltage, in order to turn on the initialization thin-film transistor T4.

The bias control signal EB may fall in order to turn on the bias thin-film transistor T7, and thus, the bias control signal EB may be applied to the 4b gate electrode T4_G2, which is the lower gate electrode of the initialization thin-film transistor T4. Thus, when the bias control signal EB falls, the bias thin-film transistor T7 and the initialization thin-film transistor T4 may be turned on. For example, the bias control signal EB that falls may have a negative voltage.

The initialization thin-film transistor T4 and the compensation thin-film transistor T3 illustrated in FIG. 6A may be the pMOS type, unlike the initialization thin-film transistor T4 and the compensation thin-film transistor T3 described above with reference to FIG. 4. The semiconductor layer included in each of the initialization thin-film transistor T4 and the compensation thin-film transistor T3 illustrated in FIG. 6A may not include an oxide semiconductor.

According to an embodiment, referring to FIGS. 6A and 6B, the plurality of thin-film transistors may further include the initialization thin-film transistor T4 electrically connected to the anode AE, and the bias thin-film transistor T7 electrically connected to the 1b gate electrode T1_G2. The initialization thin-film transistor T4 may be the pMOS thin-film transistor, and may include the 4a gate electrode T4_G1 and the 4b gate electrode T4_G2 disposed below the 4a gate electrode T4_G1. The bias thin-film transistor T7 may be turned on or turned off according to the control signal (e.g., the bias control signal EB) received from the gate driving portion GP described above with reference to FIG. 1. The shifting of the threshold voltage may include initializing the anode AE by applying the control signal to the 4b gate electrode T4_G2.

FIG. 7 is a schematic equivalent circuit diagram of an example of a pixel circuit of the display panel 10 of FIG. 1.

Hereinafter with reference to FIG. 7, redundant description of the aspects and features that are the same or substantially the same as those described above may not be repeated. For example, control signals for driving the pixel circuit illustrated in FIG. 7 may be provided to the thin-film transistors the same or substantially the same as those described above with reference to the timing diagram of FIG. 5.

As illustrated in FIG. 7, the pixel circuit of FIG. 7 may have an 8T1C (e.g., an eight transistor-one capacitor) structure. The pixel circuit of FIG. 7 may further include a second initialization thin-film transistor T8. Because the pixel circuit of FIG. 7 may further include the second initialization thin-film transistor T8, the first node ND1 described above with reference to FIGS. 4 and 6A may be changed to a second node ND2 in FIG. 7. Unlike the first node ND1 described above with reference to FIGS. 4 and 6A, the second node ND2 may not be directly connected to the anode AE included in the organic light-emitting diode OLED. The compensation thin-film transistor T3 may be disposed between the second node ND2 and the anode AE, and by the on/off operation of the compensation thin-film transistor T3 and the second emission control thin-film transistor T6, the second node ND2 may or may not be electrically connected to the anode AE.

The initialization thin-film transistor T4 illustrated in FIG. 7 may be electrically connected to the second node ND2, and unlike the pixel circuits described above with reference to FIGS. 4 and 6A, the initialization thin-film transistor T4 may not be directly connected to the anode AE.

The second initialization thin-film transistor T8 may include an 8a source-drain electrode T8_SD1, an 8b source-drain electrode T8_SD2, and an 8a gate electrode T8_G1. For example, the second initialization thin-film transistor T8 may be a pMOS type.