122. For example, the size of the conductive element 150 corresponding to the connector 1221 may be greater than the size of the conductive element 150 corresponding to the connector 1222, so as to improve the heat transfer efficiency or heat dissipation efficiency, but not limited herein.

In some embodiments, the number of the connection pads 140 disposed on one side of the circuit layer 110 may be the same as or different from the number of the conductive elements 150 disposed on the other side of the circuit layer 110 by changing contact positions of the circuit through a metal wiring process and a connection pad process. For example, the number of the connection pads 140 may be less than the number of the conductive elements 150. The number of the connection pads 140 may be 6 as shown in the top view of FIG. 2A, and the number of the conductive elements 150 may be 25 as shown in the bottom view of FIG. 2B, but the number of the connection pads 140 and the number of the conductive elements 150 are not limited herein, which may be adjusted according to the design of practical structure of the device. In other embodiments, the number of the connection pads 140 may be the same as the number of the conductive elements 150, and each of the connection pads 140 is not overlapped with each of conductive elements 150 in the direction Y. In other embodiments, the number of the connection pads 140 may be greater than the number of the conductive elements 150, but not limited herein.

Some embodiments of the present disclosure will be detailed in the following. In order to simplify the illustration, the same elements in the following would be labeled with the same symbols. The differences between different embodiments are described in detail below, and each of the embodiments and another embodiment of the present disclosure may be combined and adjusted with each other.

Please refer to FIG. 3 and FIG. 4. FIG. 3 is a partial cross-sectional schematic diagram of an electronic device according to a second embodiment of the present disclosure. FIG. 4 is a top-view perspective schematic diagram of the electronic device according to the second embodiment of the present disclosure, that is, a perspective schematic diagram viewed from the top of the electronic device along the direction Y, wherein FIG. 3 is a partial cross-sectional schematic diagram along the section line A-A′ of FIG. 4. As shown in FIG. 3 and FIG. 4, an electronic device 200 according to a second embodiment of the present disclosure may include a circuit layer 110, an electronic element 120 and a thermal conducting element 130. The circuit layer 110 may include a plurality of conductive layers 112 and a plurality of insulating layers 114 stacked in the direction Y, and the circuit layer 110 may be a redistribution layer (RDL) to redistribute the circuit. For example, the contact positions of the circuit may be changed through a metal wiring process and a connection pad process, but not limited herein. The electronic element 120 is disposed on the circuit layer 110 and electrically connected to the circuit layer 110, and the electronic element 120 includes a plurality of connectors 122. The thermal conducting element 130 is disposed between the circuit layer 110 and the electronic element 120. The thermal conducting element 130 has a plurality of openings 134, and the plurality of connectors 122 of the electronic element 120 correspond to the plurality of openings 134 of the thermal conducting element 130. For example, each of the plurality of connectors 122 may be at least partially overlapped with each of the plurality of openings 134 in the direction Y, but not limited herein. The thermal conducting element 130 is used for performing heat exchange with the electronic element 120, so as to improve the heat dissipation efficiency of the electronic device 200.

The disposing range of the thermal conducting element 130 may extend beyond a peripheral edge 120S of the electronic element 120, that is, an edge 130S of the thermal conducting element 130 may be more protruding relative to the edge 120S of the electronic element 120. In the top view of FIG. 4, it may be seen that the edge 120S of the electronic element 120 is located in the region constructed by the edge 130S of the thermal conducting element 130. The above design may increase the heat transfer area. For example, through process such as coating, exposure and/or development, the thermal conducting element 130 may be formed on the circuit layer 110, and the plurality of openings 134 may be formed, so as to reserve space for subsequent disposing the plurality of connectors 122 of the electronic element 120 to be electrically connected to the circuit layer 110. The surface of the thermal conducting element 130 may have an arc shape or other irregular shapes, but not limited herein.

In some embodiments, as shown in FIG. 3 and FIG. 4, the electronic device 200 of the present disclosure may further include a plurality of connection pads 140 disposed on the circuit layer 110, and the plurality of connection pads 140 are electrically connected to the conductive layer 112 which is the uppermost layer in the circuit layer 110 and may respectively correspond to one of the openings 134 of the thermal conducting element 130. A gap g1 may exist between each of the plurality of connection pads 140 and the thermal conducting element 130, that is, the thermal conducting element 130 does not directly contact with the connection pads 140, but not limited herein. Furthermore, each of the connectors 122 of the electronic element 120 may be electrically connected to one of the connection pads 140 through a conductive element 124. In some embodiments, the electronic device 200 of the present disclosure may further include a plurality of conductive elements 150 disposed on one side of the circuit layer 110 opposite to the electronic element 120, and the plurality of conductive elements 150 may be electrically connected to the conductive layer 112 which is the lowest layer in the circuit layer 110, but not limited herein.

Please refer to FIG. 5 and FIG. 6. FIG. 5 is a partial cross-sectional schematic diagram of an electronic device according to a third embodiment of the present disclosure. FIG. 6 is a top-view perspective schematic diagram of the electronic device according to the third embodiment of the present disclosure, that is, a perspective schematic diagram viewed from the top of the electronic device along the direction Y, wherein FIG. 5 is a partial cross-sectional schematic diagram along the section line A-A′ of FIG. 6. As shown in FIG. 5 and FIG. 6, an electronic device 300 according to a third embodiment of the present disclosure may include a circuit layer 110, a connection pad 140 and an electronic element 120. The circuit layer 110 may include a plurality of conductive layers 112 and a plurality of insulating layers 114 stacked in the direction Y. The connection pad 140 is disposed on the circuit layer 110, and the electronic element 120 is disposed on the circuit layer 110 and electrically connected to the circuit layer 110. The electronic element 120 includes a plurality of connectors 122, and the plurality of connectors 122 are electrically connected to the connection pad 140, wherein multiple connectors 122 may correspond to the same connection pad 140, so as to increase the heat transfer area, thereby improving the heat transfer efficiency. For example, multiple connectors 122 may be overlapped or partially overlapped with the same connection pad 140 in the direction Y. In FIG. 6, four connectors 122 correspond to one connection pad 140 as an example, but the number of the connectors 122 corresponding to one connection pad 140 is not limited herein, which may be adjusted according to the design of practical structure of the device.

In some embodiment, as shown in FIG. 5 and FIG. 6, the electronic device 300 of the present disclosure may further include a thermal conducting element 130 disposed on the circuit layer 110, and a gap g2 may exist between the thermal conducting element 130 and the electronic element 120 in the direction Y. That is to say, the thermal conducting element 130 does not directly contact with the electronic element 120. The thermal conducting element 130 may have an arc shape or other irregular shapes, but not limited herein. In addition, the disposing range of the thermal conducting element 130 may not extend beyond a peripheral edge 120S of the electronic element 120, that is, an edge 130S of the thermal conducting element 130 is located within the range of the edge 120S of the electronic element 120 in the top view. The thermal conducting element 130 may directly contact with the connection pad 140, that is, no gap exists between the connection pad 140 and the thermal conducting element 130, so as to improve the heat transfer efficiency, but not limited herein. In the embodiment shown in FIG. 5, the connection pad 140 may be located in an opening 134 of the thermal conducting element 130, or the connection pad 140 may be disposed corresponding to the opening 134 of the thermal conducting element 130.

Please refer to FIG. 7. FIG. 7 is a partial cross-sectional schematic diagram of an electronic device according to a fourth embodiment of the present disclosure. As shown in FIG. 7, an electronic device 400 according to a fourth embodiment of the present disclosure may include a circuit layer 110, an electronic element 120, a first flow-path structure 160 and a fluid material 170. The electronic element 120 is disposed on the circuit layer 110 and electrically connected to the circuit layer 110. The first flow-path structure 160 includes a first flow path P1, and the electronic element 120 is disposed in the first flow-path structure 160. The fluid material 170 is disposed in the first flow path P1, and the fluid material 170 is used for performing heat exchange with the electronic element 120, so as to improve the heat dissipation efficiency of the electronic device 400. The first flow path P1 may be a space surrounded by the first flow-path structure 160. The fluid material 170 may include a thermal conductive material of liquid or gas, such as deionized water, thermal conductive silicone grease, refrigerant, acetone, isopropanol, nitrogen, inert gas, other suitable materials or combinations of the above materials, but not limited herein.

Specifically, in some embodiments, the first flow-path structure 160 may include a substrate 162 and a support member 164. The substrate 162 is disposed corresponding to the electronic element 120, and the electronic element 120 is disposed between the substrate 162 and the circuit layer 110. The substrate 162 may be at least partially overlapped with the electronic element 120 in the direction Y. The support member 164 may be disposed at opposite two sides of the electronic element 120 in the direction X. In some embodiments, the support member 164 may be disposed at the periphery of the electronic element 120. For example, the support member 164 may be located at the outer side of the electronic element 120 and annularly surround the electronic element 120, but not limited herein. The first flow-path structure 160 may surround the electronic element 120. For example, the support member 164 is connected to the substrate 162 and the circuit layer 110, so the substrate 162 and the support member 164 may surround the electronic element 120 above the circuit layer 110. Through the above design of the first flow-path structure 160, the first flow path P1 may be formed between the substrate 162, the support member 164 and the electronic element 120, and the fluid material 170 may be disposed in the first flow path P1 for performing heat exchange with the electronic element 120. In some embodiments, the substrate 162 and/or the support member 164 may include thermal conductive materials. For example, the substrate 162 may include metal, graphene, ceramic, thermal conductive silicone, other suitable materials or combinations of the above materials, and the support member 164 may include sealant, but not limited herein. In some embodiments, the first flow-path structure 160 may be a structure formed integrally for surrounding the electronic element 120 and forming the first flow path P1 with the electronic element 120. For example, the substrate 162 and the support member 164 include the same material and may be formed together, but not limited herein.

In some embodiments, as shown in FIG. 7, the circuit layer 110 may include a plurality of conductive layers 112 and a plurality of insulating layers 114 stacked in the direction Y. The connector 122 of the electronic element 120 may be electrically connected to the conductive layer 112 which is the uppermost layer in the circuit layer 110 through the connection pad 140. In addition, the electronic device 400 may further include a plurality of conductive elements 150 disposed on one side of the circuit layer 110 opposite to the electronic element 120, and the plurality of conductive elements 150 may be electrically connected to the circuit layer 110, but not limited herein.

Please refer to FIG. 8. FIG. 8