The tensile strength of the bonding wire can be measured by using a tensile test. A commercially available tensile testing machine (TENSILON RTF-1225 manufactured by A&D Company, Limited) can be used for the tensile test. Measurement can be performed assuming that a distance between gauge points is 100 mm, a tensile speed is 10 mm/min, and a load cell rating load is 250 N. In the present invention, the tensile strength means a maximum stress in the tensile test.

Si, Au, Ag

The bonding wire of the present invention may further contain equal to or larger than 3 mass ppm and equal to or smaller than 10000 mass ppm of one or more of Si, Au, and Ag in total. Due to this, a further favorable high-temperature and high-humidity service life can be achieved.

As the reason why the high-temperature and high-humidity service life is further improved when the bonding wire of the present invention further contains equal to or larger than 3 mass ppm and equal to or smaller than 10000 mass ppm of one or more of Si, Au, and Ag in total, it can be considered that a catalytic action is exerted by adding one or more of Si, Au, and Ag under presence of Pd and Pt, that is, adding Pd and Pt in combination with one or more of Si, Au, and Ag.

From the viewpoint of achieving a further favorable high-temperature and high-humidity service life, a total concentration of one or more of Si, Au, and Ag contained in the bonding wire of the present invention is preferably equal to or larger than 3 mass ppm, more preferably equal to or larger than 5 mass ppm, and even more preferably equal to or larger than 6 mass ppm, equal to or larger than 8 mass ppm, equal to or larger than 10 mass ppm, equal to or larger than 12 mass ppm, equal to or larger than 14 mass ppm, or equal to or larger than 15 mass ppm. The total concentration of one or more of Si, Au, and Ag is preferably equal to or smaller than 1000 mass ppm, and more preferably smaller than 1000 mass ppm, equal to or smaller than 950 mass ppm, equal to or smaller than 900 mass ppm, equal to or smaller than 850 mass ppm, equal to or smaller than 800 mass ppm, equal to or smaller than 750 mass ppm, equal to or smaller than 700 mass ppm, equal to or smaller than 650 mass ppm, or equal to or smaller than 600 mass ppm. It has been found that, when the bonding wire of the present invention further contains one or more of Si, Au, and Ag in the preferred range described above, corrosion of the wire can be suppressed and favorable electrical connection can be maintained even after 3000 hours elapses in the uHAST.

Fe, Mg

The bonding wire of the present invention may further contain equal to or larger than 3 mass ppm and equal to or smaller than 700 mass ppm of one or more of Fe and Mg in total. Due to this, the shear force of the wedge bonded part can be further improved.

It is estimated that the reason why the shear force of the wedge bonded part is improved when the bonding wire of the present invention further contains a predetermined amount of one or more of Fe and Mg is mainly because a yield stress in the wire axis direction is increased due to solid-solution strengthening.

From the viewpoint of improving the shear force of the wedge bonded part, a total concentration of one or more of Fe and Mg contained in the bonding wire of the present invention is preferably equal to or larger than 3 mass ppm, more preferably equal to or larger than 5 mass ppm, and even more preferably equal to or larger than 6 mass ppm, equal to or larger than 8 mass ppm, equal to or larger than 10 mass ppm, equal to or larger than 12 mass ppm, equal to or larger than 14 mass ppm, or equal to or larger than 15 mass ppm. Additionally, the total concentration of one or more of Fe and Mg is preferably equal to or smaller than 700 mass ppm, and more preferably smaller than 700 mass ppm, equal to or smaller than 650 mass ppm, equal to or smaller than 600 mass ppm, equal to or smaller than 550 mass ppm, equal to or smaller than 500 mass ppm, equal to or smaller than 450 mass ppm, or equal to or smaller than 400 mass ppm.

The balance, the remaining part, of the bonding wire of the present invention contains Al. As an aluminum raw material for manufacturing the bonding wire, Al having a purity of 4N (Al: 99.99% by mass or more) can be used. More preferably, Al having a purity equal to or higher than 5N (Al: 99.999% by mass or more) the amount of impurities of which is smaller is used. In a range of not inhibiting the effect of the present invention, the balance of the bonding wire of the present invention may contain an element other than Al. The content of Al in the bonding wire of the present invention is not limited so long as the content does not inhibit the effect of the present invention, and is preferably equal to or larger than 95% by mass, equal to or larger than 96% by mass, or equal to or larger than 97% by mass, and more preferably equal to or larger than 98% by mass, equal to or larger than 98.5% by mass, equal to or larger than 98.6% by mass, equal to or larger than 98.8% by mass, or equal to or larger than 99% by mass. According to the preferred embodiment, the balance of the bonding wire of the present invention consists of Al and inevitable impurities.

In the preferred embodiment, the bonding wire of the present invention does not have a coating that contains a metal other than Al as a main component on the outer periphery of the wire. Herein, the “coating that contains a metal other than Al as a main component” means the coating in which the content of the metal other than Al is 50% by mass or more.

The bonding wire of the present invention can achieve a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices while satisfying basic characteristics such as wedge bondability, electrical conductivity, heat resistance, and the like. Thus, the bonding wire of the present invention can be preferably used as an Al bonding wire for semiconductor devices, especially for power semiconductor devices (particularly, for vehicle-mounted power semiconductor devices).

A wire diameter of the bonding wire of the present invention is not particularly limited, and may be 50 to 600 μm, for example.

(Method for Manufacturing Bonding Wire)

A manufacturing method for the Al wiring material of the present invention is not particularly limited. For example, the Al wiring material of the present invention may be manufactured by using a known processing method such as extrusion processing, swaging processing, wire-drawing processing, and rolling processing, for example. When the wire diameter is small to some extent, it is preferable that wire-drawing processing with diamond dies be performed. With regard to the cold working in which the wire-drawing is performed at an ordinary temperature, a production device and the like therefor have a relatively simple configuration and a workability thereof is excellent. When the resistance during wire-drawing is decreased so as to increase the productivity, there may be used the hot working in which the wire-drawing is performed while heating.

After weighing pure metals of Al and additive elements as starting materials so that the content of each additive element falls within a specific range, these materials are mixed and then molten and solidified to form an ingot. Alternatively, as the raw material for each additive element, a mother alloy containing the additive element in high concentration may be used. In the process of melting for producing the ingot, a batch process or a continuous casting process can be used. A diameter of the cylindrical ingot is preferably equal to or smaller than φ8 mm (for example, equal to or larger than φ3 mm and equal to or smaller than 8 mm) while taking into account workability in the following processing step.

Wire-drawing processing and the like can be performed on the obtained cylindrical ingot to manufacture the wire having a predetermined wire diameter. A thermal refining heat treatment is preferably performed with the wire diameter before reaching the final wire diameter (hereinafter, referred to as an “intermediate wire diameter”) or at the final wire diameter. By performing the thermal refining heat treatment, processing strain can be removed, or recrystallization and the like can be caused. A condition for the thermal refining heat treatment is, for example, heating at a temperature range equal to or higher than 300° C. and equal to or lower than 600° C. for a time equal to or longer than 1 second and shorter than 600 seconds.

As a result of measuring the crystal orientation on the cross-section parallel to the wire axis direction including the wire axis of the bonding wire, to control the orientation ratio of the <100> crystal orientation angled at 15 degrees or less to the wire axis direction to be equal to or higher than 30% and equal to or lower than 90%, for example, it is effective to perform heat treatment with an intermediate wire diameter (hereinafter, also referred to as “intermediate heat treatment”).

For the intermediate heat treatment, a method of continuously sweeping the wire can be used. In a case of using this method, it is effective to perform the intermediate heat treatment multiple times with the intermediate wire diameter at a temperature range equal to or higher than 300° C. and equal to or lower than 550° C. It is effective to set a heat treatment time at the time of the intermediate heat treatment to be equal to or longer than 1 second and shorter than 600 seconds. It is effective to perform the intermediate heat treatment once with a wire diameter of 1.3 to 2.0 times the final wire diameter, and once with a wire diameter of 2.3 to 4.0 times the final wire diameter. An atmosphere of the heat treatment is preferably caused to be an inert atmosphere such as an Ar gas atmosphere to prevent oxidation.

The following describes the reason why the method described above is effective to control the orientation ratio of the <100> crystal orientation described above to be equal to or higher than 30% and equal to or lower than 90%. A crystal grain having the <100> crystal orientation described above is formed when recrystallization is caused in the intermediate heat treatment or the heat treatment step with the final wire diameter. Thus, it is important to control growth of the crystal grain by performing the intermediate heat treatment step with a predetermined wire diameter. Herein, the crystal grain grows using, as driving force, strain energy accumulated in a material due to wire-drawing processing, so that it is important to control growth of the crystal grain by performing the intermediate heat treatment with the predetermined wire diameter. A growth rate of the crystal grain is increased as a heat treatment temperature is increased, so that it is important to control the heat treatment temperature or the heat treatment time. According to the present invention, it can be considered that growth of the crystal grain can be controlled by performing the intermediate heat treatment step with the predetermined wire diameter, heat treatment temperature, and heat treatment time, and the orientation ratio of the <100> crystal orientation of the wire manufactured through the final heat treatment step can be controlled to be in a desired range.

[Semiconductor Device]

The semiconductor device can be manufactured by connecting the electrode on the semiconductor chip to an external electrode on a lead frame or a substrate by using the bonding wire of the present invention.

In one embodiment, the semiconductor device of the present invention includes the circuit board, the semiconductor chip, and the bonding wire for bringing the circuit board and the semiconductor chip into conduction with each other, and is characterized in that the bonding wire is the bonding wire of the present invention.

In the semiconductor device of the present invention, the circuit board and the semiconductor chip are not particularly limited, and a known circuit board and semiconductor chip that may be used for constituting the semiconductor device may be used. Alternatively, a lead frame may be used in place of the circuit board. For example, like the semiconductor device disclosed in JP-A-2002-246542, the semiconductor device may include a lead frame and a semiconductor chip mounted on the lead frame.

Examples of the semiconductor device include various semiconductor devices used for electric products (for example, a computer, a cellular telephone, a digital camera, a television, an air conditioner, a solar power generation system), vehicles (for example, a motorcycle, an automobile, an electric train, a ship, and an aircraft), and the like, a semiconductor device for electric power (power semiconductor device) is especially preferred, and a vehicle-mounted power semiconductor device is particularly preferred.

EXAMPLE

Hereinafter, the present invention will be described in detail with reference to Examples. However, the present invention is not limited to the following Examples.

(Sample)

A method for manufacturing a sample will be described. As a raw material, Al having a purity of 4N (99.99% by mass or more) and including inevitable impurities as a balance was used. Pd, Pt, Si, Au, Ag, Fe, and Mg each having a purity of 99.9% by mass or more and including inevitable impurities as a balance were also used. An Al alloy used for the bonding wire was manufactured by loading an alumina crucible having an inner diameter equal to or larger than mm and smaller than 70 mm with a raw material to be alloyed with the Al raw material, and melting it by using a high-frequency melting furnace. An atmosphere in the furnace at the time of melting was caused to be an Ar atmosphere, the highest end-point temperature at the time of melting was caused to fall within a range equal to or higher than 1050° C. and lower than 1300° C. In the process of melting for producing the ingot, a batch-type high-frequency melting furnace was used. Cooling after the melting was air cooling. In a case where an organic matter or the like was attached to a surface of the ingot after the melting, polishing, degreasing, or pickling was performed as needed.

The cylindrical ingot having a diameter equal to or larger than φ3 mm and equal to or smaller than 8 mm was obtained by melting, and wire-drawing processing and the like were performed on the ingot using dies to prepare the wire having a diameter of φ300 μm. At the time of wire-drawing processing, a commercially available lubricating liquid was used for securing lubricity on a contact interface between the wire and the dies. A reduction of area per die at the time of wire-drawing processing was equal to or higher than 10% and lower than 15%. Herein, the reduction of area is a value representing, as a percentage, a ratio of a cross-sectional area of the wire that is reduced by the wire-drawing processing to the cross-sectional area of the wire before performing the wire-drawing processing. A wire feeding speed at the time of wire-drawing processing was set to be equal to or higher than 10 m/min and lower than 300 m/min. The intermediate heat treatment with the intermediate wire diameter and the final heat treatment with the final wire diameter were performed under the conditions described later.

The intermediate heat treatment was performed while continuously sweeping the wire. The atmosphere at the time of intermediate heat treatment was caused to be an Ar gas atmosphere. In the intermediate heat treatment, the heat treatment temperature was set to be equal to or higher than 300° C. and equal to or lower than 550° C., and the heat treatment time was set to be equal to or longer than 1 second and shorter than 600 seconds. The intermediate heat treatment was performed once with a wire diameter of 1.3 to 2.0 times the final wire diameter, and performed once with a wire diameter of 2.3 to 4.0 times the final wire diameter.

The wire after the wire-drawing processing was subjected to the final heat treatment so that the tensile strength finally becomes equal to or larger than 25 MPa and equal to or smaller than 85 MPa, and a breaking elongation becomes equal to or higher than 15% and lower than 25%. The final heat treatment was performed while continuously sweeping the wire. The atmosphere at the time of final heat treatment was caused to be the Ar gas atmosphere. In the final heat treatment, the heat treatment temperature was set to be equal to or higher than 400° C. and equal to or lower than 600° C., and the heat treatment time was set to be equal to or longer than 1 second and shorter than 600 seconds.

In manufacturing the wire according to Comparative Examples 7 to 11, the intermediate heat treatment temperature was set to be 250° C., and the heat treatment time was set to be 5 seconds. The intermediate heat treatment was performed once with a wire diameter of 500 μm, and performed once with a wire diameter of 900 μm. The final heat treatment temperature was set to be lower than 400° C., and the heat treatment time was set to be shorter than 1 second. In manufacturing the wire according to Comparative Example 12, the intermediate heat treatment temperature was set to be 350° C., and the heat treatment time was set to be 8 seconds. The intermediate heat treatment was performed once with a wire diameter of 450 μm, and performed once with a wire diameter of 1100 μm. The final heat treatment temperature was set to be 450° C., and the heat treatment time was set to be 4 seconds. Furthermore, in manufacturing the wire according to Examples 39 to 44, the intermediate heat treatment temperature was set to be 570° C., and the heat treatment time was set to be 400 seconds. The intermediate heat treatment was performed once with a wire diameter of 600 μm, and performed once with a wire diameter of 1000 μm. The final heat treatment temperature was set to be equal to or higher than 600° C., and the heat treatment time was set to be equal to or longer than 600 seconds.

(Measurement of Element Content)

The content of elements in the bonding wire was measured by using ICP-OES (“PS3520UVDDII” manufactured by Hitachi High-Tech Corporation) or ICP-MS (“Agilent 7700x ICP-MS” manufactured by Agilent Technologies, Inc.) as an analysis device.

(Measurement of Orientation Ratio of <100> Crystal Orientation)

The orientation ratio of the <100> crystal orientation was measured by using, as an inspection surface, the cross-section parallel to the wire axis including the wire axis of the bonding wire. In the present invention, the wire axis means an axis A illustrated in FIG. 1, that is, a center axis of the bonding wire. Additionally, the cross-section parallel to the wire axis direction means a plane B illustrated in FIG. 1, that is, a cross-section parallel to the wire axis direction (wire longitudinal direction) including the center axis of the bonding wire. A value of the orientation ratio of the <100> crystal orientation was assumed to be an arithmetic mean of values obtained in five measurement regions. For the bonding wire as a measurement target, samples for measurement were acquired at intervals of 1 m or more with respect to the wire axis direction to be measured. The measurement region had a length equal to or larger than 300 μm and smaller than 600 μm in the wire axis direction, and had a length larger than the entire wire in a direction perpendicular to the wire axis direction. As a method for measuring the crystal orientation, the EBSD method was used. For analysis of data obtained by the EBSD method, dedicated software (OIM analysis and the like manufactured by TSL solutions) was used. Measurement results are indicated in a column of “orientation ratio of <100> crystal orientation” in Table 1-1, Table 1-2, Table 1-3, Table 1-4, and Table 2-1.

(Measurement of Tensile Strength)

The tensile strength of the bonding wire was measured by using a tensile test. A commercially available tensile testing machine (TENSILON RTF-1225 manufactured by A&D Company, Limited) was used for the tensile test, and measurement was performed under conditions of a distance between gauge points of 100 mm, a tensile speed of 10 mm/min, and a load cell rating load of 250 N. A maximum stress in the tensile test was assumed to be the tensile strength. Arithmetic mean values of the tensile strength of 10 bonding wires are indicated in a column of “tensile strength” in Table 1-1, Table 1-2, Table 1-3, Table 1-4, and Table 2-1.

(Method for Evaluating Bonding Wire)

The following describes a method for evaluating the bonding wire. The wire diameter of the bonding wire used for evaluation was set to be 000 μm. As a substrate, a Ni-plated Al substrate was used. For bonding of the bonding wire, a commercially available wire bonder (REBO-7 manufactured by Ultrasonic Engineering Co., Ltd.) was used. The temperature at the time of bonding was set to be an ordinary temperature, and the atmosphere at the time of bonding was set to be an air atmosphere.

(Method for Evaluating High-Temperature and High-Humidity Service Life)

The following describes a method for evaluating the high-temperature and high-humidity service life. The high-temperature and high-humidity service life was evaluated by the uHAST as the accelerated evaluation test under a high-temperature and high-humidity environment. Conditions for the uHAST were set to be 85% RH and 150° C., which is higher than a typical temperature, while taking into account an operation in a higher-temperature environment.

Under typical bonding conditions for the Al wire, five wires were wedge-bonded onto the substrate. Subsequently, the prepared sample was allowed to stand in a high-temperature and high-humidity furnace. Conditions for the uHAST were set to be 150° C. and 85% RH, and the atmosphere inside the high-temperature and high-humidity furnace was set to be an air atmosphere. Regarding the sample after the uHAST ended, a cross-section of a wire loop portion parallel to the wire axis direction including the wire axis was exposed by mechanical polishing to check whether corrosion was caused in the wire. To check whether corrosion was caused, a Scanning Electron Microscope (SEM) was used. A visual field to be observed was set to be 99% or more of the wire diameter, with the length in the wire axis direction equal to or larger than 1 mm. A point where to check whether corrosion was caused was set to be the entire visual field to be observed. After 2000 hours elapsed, the entire cross-sections of five wires were observed with 200-fold magnification. In a case where an area ratio of corrosion of at least one wire was equal to or higher than 10%, it was determined that there was a practical problem and evaluated as “cross”. In a case where the area ratios of corrosion of the five wires were lower than 10%, it was determined that there was no practical problem and evaluated as “circle”. Herein, the area ratio is a value calculated by dividing a corroded region in the observed visual field by the cross-sectional area of the wire. Furthermore, in a case where the area ratios of corrosion of the five wires were all lower than 10% at the time when 3000 hours elapsed, it was determined to be excellent and evaluated as “double circle”. Evaluation results are indicated in a column of “high-temperature and high-humidity service life” in Table 1-1, Table 1-2, Table 1-3, Table 1-4, and Table 2-1. “cross” means “failure”, and “circle” and “double circle” mean “passed”.

(Method for Evaluating Loop Straightness at Time of Forming Long-Span Loop)

The following describes a method for evaluating loop straightness at the time of forming a long-span loop. As conditions for forming a loop, a distance between the wire bonded parts was set to be 30.0 mm and a loop height was set to be 6 mm, which are conditions severer than normal loop forming conditions, while taking into account a long-span loop. Assuming that the distance between the wire bonded parts is a, and a length of a line passing through the wire axis at the time of observing the substrate from right above with an optical microscope is b, regarding 10 bonding wires that are bonded, it was determined to be fault and evaluated as “cross” if there was at least one point where a value obtained by dividing b by a (that is, b/a) satisfied 1.02≤b/a, and it was determined to be fine and evaluated as “circle” if there was no point where 1.0 2≤b/a was satisfied. Evaluation results are indicated in a column of “loop straightness” in Table 1-1, Table 1-2, Table 1-3, Table 1-4, and Table 2-1. “cross” means “failure”, and “circle” means “passed”.

(Method for Evaluating Shear Force of Wedge Bonded Part)

The following describes a method for evaluating the shear force of the wedge bonded part. The shear force of the wedge bonded part was evaluated by performing wedge bonding at 10 points under typical bonding conditions, and measuring the shear force of the wedge bonded parts. A commercially available micro shear strength tester was used for measuring the shear force. A shear rate was set to be 200 μm/sec, and a height of a shearing tool from the substrate was set to be 10 μm. The shear force was measured while fixing, by a jig, the substrate to which the wire was bonded. It was determined to be failure and evaluated as “cross” if there was at least one point where a value of the shear force obtained by a shear strength test for the wedge bonded part was smaller than 9 N, and it was determined that there was no practical problem and evaluated as “circle” in a case where the shear force obtained by the shear strength test for the wedge bonded part was equal to or larger than 9 N and smaller than 14 N at all of the 10 points. Furthermore, it was determined to be excellent and evaluated as “double circle” in a case where the shear force obtained by the shear strength test for the wedge bonded part was equal to or larger than 14 N at all of the 10 points. Evaluation results are indicated in a column of “shear force of wedge bonded part” in Table 1-1, Table 1-2, Table 1-3, Table 1-4, and Table 2-1. “cross” means “failure”. “circle” and “double circle” mean “passed”.

The composition, the orientation ratio (%) of the <100> crystal orientation, the tensile strength, and the evaluation results of the bonding wires according to Examples are summarized in Tables 1-1, 1-2, 1-3, and 1-4. The composition and the like of the bonding wires according to Comparative Examples are indicated in Table 2-1.

TABLE 1-1

Pd, Pt
Si, Au, Ag
Fe, Mg
Orientation ratio

High-tem-

concentration
concentration
concentration
of <100> crystal
Tensile
perature and
Loop
Shear force

(mass ppm)
(mass ppm)
(mass ppm)
orientation ^{* 1}
strength
high-humidity
straight-
of wedge

No.
Pd
Pt
Total
Si
Au
Ag
Total
Fe
Mg
Total
(%)
(MPa)
service life
ness
bonded part

Ex-
1
3
—
3
—
—
—
0
—
—
0
33
28
◯
◯
◯

ample
2
496
—
496
—
—
—
0
—
—
0
31
83
◯
◯
◯

3
3
—
3
—
—
—
0
—
—
0
88
27
◯
◯
◯

4
492
—
492
—
—
—
0
—
—
0
87
82
◯
◯
◯

5
10
—
10
—
—
—
0
—
—
0
67
38
◯
◯
◯

6
20
—
20
—
—
—
0
—
—
0
66
39
◯
◯
◯

7
31
—
31
—
—
—
0
—
—
0
60
42
◯
◯
◯

8
50
—
50
—
—
—
0
—
—
0
63
44
◯
◯
◯

9
100
—
100
—
—
—
0
—
—
0
55
50
◯
◯
◯

10
302
—
302
—
—
—
0
—
—
0
42
80
◯
◯
◯

11
—
3
3
—
—
—
0
—
—
0
34
26
◯
◯
◯

12
—
494
494
—
—
—
0
—
—
0
32
85
◯
◯
◯

13
—
3
3
—
—
—
0
—
—
0
88
28
◯
◯
◯

14
—
495
495
—
—
—
0
—
—
0
85
81
◯
◯
◯

15
—
50
50
—
—
—
0
—
—
0
65
37
◯
◯
◯

16
—
71
71
—
—
—
0
—
—
0
59
46
◯
◯
◯

17
—
100
100
—
—
—
0
—
—
0
56
52
◯
◯
◯

18
—
150
150
—
—
—
0
—
—
0
51
63
◯
◯
◯

19
—
300
300
—
—
—
0
—
—
0
41
81
◯
◯
◯

20
10
30
40
—
—
—
0
—
—
0
57
33
◯
◯
◯

21
11
40
51
—
—
—
0
—
—
0
72
36
◯
◯
◯

22
10
72
82
—
—
—
0
—
—
0
65
42
◯
◯
◯

23
20
30
50
—
—
—
0
—
—
0
57
38
◯
◯
◯

24
20
50
70
—
—
—
0
—
—
0
68
39
◯
◯
◯

25
20
100
120
—
—
—
0
—
—
0
60
48
◯
◯
◯

26
40
20
60
—
—
—
0
—
—
0
72
44
◯
◯
◯

27
40
50
90
—
—
—
0
—
—
0
67
53
◯
◯
◯

28
51
50
101
—
—
—
0
—
—
0
63
60
◯
◯
◯

29
50
99
149
—
—
—
0
—
—
0
59
70
◯
◯
◯

30
100
101
201
—
—
—
0
—
—
0
52
74
◯
◯
◯

^{* 1}As a result of measuring crystal orientation on cross-section parallel to wire axis direction including wire axis of bonding wire, orientation ratio of <100> crystal orientation angled at 15 degrees or less to wire axis direction (%)

TABLE 1-2

Pd, Pt
Si, Au, Ag
Fe, Mg
Orientation ratio

High-tem-

concentration
concentration
concentration
of <100> crystal
Tensile
perature and
Loop
Shear force

(mass ppm)
(mass ppm)
(mass ppm)
orientation ^{* 1}
strength
high-humidity
straight-
of wedge

No.
Pd
Pt
Total
Si
Au
Ag
Total
Fe
Mg
Total
(%)
(MPa)
service life
ness
bonded part

Ex-
31
24
—
24
—
—
—
0
—
—
0
64
26
◯
◯
◯

ample
32
50
—
50
—
—
—
0
—
—
0
52
84
◯
◯
◯

33
—
71
71
—
—
—
0
—
—
0
65
35
◯
◯
◯

34
—
103
103
—
—
—
0
—
—
0
51
82
◯
◯
◯

35
10
32
42
—
—
—
0
—
—
0
62
35
◯
◯
◯

36
20
50
70
—
—
—
0
—
—
0
58
40
◯
◯
◯

37
12
60
72
—
—
—
0
—
—
0
55
81
◯
◯
◯

38
30
40
70
—
—
—
0
—
—
0
52
83
◯
◯
◯

39
20
—
20
—
—
—
0
—
—
0
67
23
◯
X
◯

40
—
63
63
—
—
—
0
—
—
0
65
24
◯
X
◯

41
50
—
50
—
—
—
0
—
—
0
63
21
◯
X
◯

42
—
100
100
—
—
—
0
—
—
0
60
22
◯
X
◯

43
10
30
40
—
—
—
0
—
—
0
75
24
◯
X
◯

44
15
50
65
—
—
—
0
—
—
0
71
20
◯
X
◯

^{* 1}As a result of measuring crystal orientation on cross-section parallel to wire axis direction including wire axis of bonding wire, orientation ratio of <100> crystal orientation angled at 15 degrees or less to wire axis direction (%)

TABLE 1-3

Pd, Pt
Si, Au, Ag
Fe, Mg
Orientation ratio

High-tem-

concentration
concentration
concentration
of <100> crystal
Tensile
perature and
Loop
Shear force

(mass ppm)
(mass ppm)
(mass ppm)
orientation ^{* 1}
strength
high-humidity
straight-
of wedge

No.
Pd
Pt
Total
Si
Au
Ag
Total
Fe
Mg
Total
(%)
(MPa)
service
ness
bonded part

Ex-
45
25
—
25
4
—
—
4
—
—
0
60
38
⊚
◯
◯

ample
46
30
—
30
—
3
—
3
—
—
0
58
37
⊚
◯
◯

47
29
—
29
—
—
5
5
—
—
0
55
41
⊚
◯
◯

48
—
72
72
9900
—
—
9900
—
—
0
44
75
⊚
◯
◯

49
—
80
80
—
9900
—
9900
—
—
0
42
77
⊚
◯
◯

50
—
81
81
—
—
9900
9900
—
—
0
46
78
⊚
◯
◯

51
14
—
14
50
—
—
50
—
—
0
60
40
⊚
◯
◯

52
18
—
18
500
—
—
500
—
—
0
57
45
⊚
◯
◯

53
12
—
12
1000
—
—
1000
—
—
0
66
56
⊚
◯
◯

54
10
—
10
5001
—
—
5001
—
—
0
35
81
⊚
◯
◯

55
25
—
25
52
—
—
52
—
—
0
38
40
⊚
◯
◯

56
24
—
24
1000
—
—
1000
—
—
0
52
55
⊚
◯
◯

57
50
—
50
503
—
—
503
—
—
0
82
40
⊚
◯
◯

58
—
70
70
600
—
—
600
—
—
0
62
46
⊚
◯
◯

59
—
100
100
1000
—
—
1000
—
—
0
61
51
⊚
◯
◯

60
20
30
50
500
—
—
500
—
—
0
59
44
⊚
◯
◯

61
50
—
50
—
102
—
102
—
—
0
60
49
⊚
◯
◯

62
—
63
63
—
—
100
100
—
—
0
62
43
⊚
◯
◯

63
—
100
100
—
500
—
500
—
—
0
57
52
⊚
◯
◯

64
—
150
150
—
—
503
503
—
—
0
50
59
⊚
◯
◯

65
50
—
50
1
—
—
1
—
—
0
62
43
◯
◯
◯

66
—
71
71
—
1
—
1
—
—
0
63
41
◯
◯
◯

67
30
—
30
—
—
2
2
—
—
0
54
50
◯
◯
◯

68
—
103
103
1
1
—
2
—
—
0
50
64
◯
◯
◯

69
20
—
20
—
1
1
2
—
—
0
59
45
◯
◯
◯

70
—
50
50
1
—
1
2
—
—
0
63
51
◯
◯
◯

71
20
50
70
2
—
—
2
—
—
0
58
60
◯
◯
◯

72
20
20
40
—
1
—
1
—
—
0
60
53
◯
◯
◯

73
10
30
40
—
—
2
2
—
—
0
64
47
◯
◯
◯

^{* 1}As a result of measuring crystal orientation on cross-section parallel to wire axis direction including wire axis of bonding wire, orientation ratio of <100> crystal orientation angled at 15 degrees or less to wire axis direction (%)

TABLE 1-4

Pd, Pt
Si, Au, Ag
Fe, Mg
Orientation ratio

High-tem-

concentration
concentration
concentration
of <100> crystal
Tensile
perature and
Loop
Shear force

(mass ppm)
(mass ppm)
(mass ppm)
orientation ^{* 1}
strength
high-humidity
straight-
of wedge

No.
Pd
Pt
Total
Si
Au
Ag
Total
Fe
Mg
Total
(%)
(MPa)
service
ness
bonded part

Ex-
74
19
—
19
501
—
—
501
3
—
3
56
40
⊚
◯
⊚

ample
75
30
—
30
510
—
—
510
—
4
4
51
44
⊚
◯
⊚

76
30
—
30
916
—
—
916
698
—
698
40
77
⊚
◯
⊚

77
52
—
52
960
—
—
960
—
695
695
38
79
⊚
◯
⊚

78
50
—
50
—
51
—
51
51
—
51
62
49
⊚
◯
⊚

79
71
—
71
—
—
60
60
—
50
50
68
43
⊚
◯
⊚

80
—
51
51
500
—
—
500
202
—
202
59
54
⊚
◯
⊚

81
—
70
70
972
—
—
972
—
200
200
52
60
⊚
◯
⊚

82
—
103
103
502
—
—
502
—
400
400
50
67
⊚
◯
⊚

83
20
—
20
1001
—
—
1001
50
20
70
66
58
⊚
◯
⊚

84
50
—
50
550
—
—
550
15
41
56
65
53
⊚
◯
⊚

85
100
—
100
501
—
—
501
30
30
60
57
50
⊚
◯
⊚

86
—
80
80
—
10
—
10
30
—
30
66
41
⊚
◯
⊚

87
—
120
120
—
—
15
15
—
32
32
59
61
⊚
◯
⊚

88
10
30
40
510
—
—
510
50
—
50
63
48
⊚
◯
⊚

89
10
50
60
511
—
—
511
—
50
50
65
55
⊚
◯
⊚

90
18
—
18
505
—
—
505
2
—
2
64
52
⊚
◯
◯

91
50
—
50
988
—
—
988
—
1
1
60
59
⊚
◯
◯

92
—
70
70
560
—
—
560
1
—
1
58
48
⊚
◯
◯

93
—
100
100
950
—
—
950
—
2
2
61
60
⊚
◯
◯

94
10
30
40
510
—
—
510
2
—
2
67
52
⊚
◯
◯

95
12
50
62
906
—
—
906
—
2
2
55
62
⊚
◯
◯

96
10
40
50
550
—
—
550
1
1
2
59
56
⊚
◯
◯

^{* 1}As a result of measuring crystal orientation on cross-section parallel to wire axis direction including wire axis of bonding wire, orientation ratio of <100> crystal orientation angled at 15 degrees or less to wire axis direction (%)

TABLE 2-1

Pd, Pt
Si, Au, Ag
Fe, Mg
Orientation ratio

High-tem-

concentration
concentration
concentration
of <100> crystal
Tensile
perature and
Loop
Shear force

(mass ppm)
(mass ppm)
(mass ppm)
orientation ^{* 1}
strength
high-humidity
straight-
of wedge