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where R is a group including 1-10 carbon atoms and R′ is a group including 1-6 carbon atoms. As used in this regard, a “carbon group” may be linear, branched, cyclic, saturated or unsaturated. Additionally, a styrene derivative monomer may include a group on the benzene ring with 0-10 carbon atoms and an R′ group on the vinyl comprising 1-6 carbon atoms. A benzyl alcohol derivative monomer or a benzyl chloride derivative monomer may include a group on the benzene ring comprising 0-10 carbon atoms and a R′ group on the benzyl carbon comprising 1-6 carbon atoms.

In some embodiments, the monomers include two bifunctional monomers, each functional group being the same. In this way the functional groups of one monomer react with the functional groups of a second monomer. Those skilled in the art may recognize this as an “AB” polymer.

In some embodiments, the monomers include at least two amine, aldehyde, ketone, or alcohol groups. In some embodiments, the monomers have a general formula of X—R″—X, where X is a functional group selected from NH₂, NHR′, O, OH, CHO, CR′O, COOH, or COOR′, R′ is a group comprising 1-6 carbon atoms, and R″ is a group including 1-15 carbon atoms. In some embodiments, R′ includes 1-4 carbon atoms. In some embodiments, R″ is an ethylene or propylene group. In specific embodiments, the monomers comprise terephthalic acid (TPA, C₆H₄(COOH)₂) and ethylene diamine (C₂H₄(NH₂)₂).

In some embodiments, the monomers include a monofunctional monomer. When combined with the above embodiments, those skilled in the art may recognize this as an “AC” or “ABC” polymer. Without being bound by theory, in these embodiments, it is believed that the monofunctional monomer acts as a terminal group and limits any further chain reactions.

In some embodiments, the monofunctional monomer comprises an amine, aldehyde, ketone, or alcohol group. In some embodiments, the monofunctional monomer has a general formula of RX, where R is a group including 1-10 carbon atoms, X is a functional group selected from NH₂, NHR′, O, OH, or COOH, and R′ is a group including 1-6 carbon atoms.

In order to control the “flowability” of the resulting film, it has been found that it may be necessary to control the size of the resulting oligomers. Accordingly, in some embodiments, the formation of polymer material 340 is performed on a substrate maintained at a temperature in a range of 0° C. to 400° C. In some embodiments, the substrate is maintained at a temperature greater than or equal to about 0° C., greater than or equal to about 30° C., greater than or equal to about 50° C., greater than or equal to about 100° C., greater than or equal to about 200° C., or greater than or equal to about 300° C. In some embodiments, the substrate is maintained at a temperature less than or equal to about 400° C., less than or equal to about 300° C., less than or equal to about 200° C., less than or equal to about 100° C., less than or equal to about 50° C., or less than or equal to about 30° C. Further, other process parameters may be controlled during the formation of polymer material 340. Examples of parameters which may be controlled include, but are not limited to: processing chamber pressure, monomer selections, the use of an inert diluent or carrier gas, partial pressures of monomers, pulse sequence of monomers, and pause periods to permit flow of the polymer material.

FIG. 4 is a flowchart of an example method of implementing an RID processes for dielectric material formation, in accordance with some embodiments. At block 410, a base structure including at least one opening is obtained. More specifically, the base structure can include at least one opening and at least one feature. In some embodiments, obtaining the base structure includes receiving a preformed base structure. In some embodiments, obtaining the base structure includes forming the base structure from a substrate.

At block 420, a dielectric material is formed within the at least one opening using an RID process. Generally, RID involves using high energy directional ions to deposit a target layer (e.g., film). Due to directionality of the plasma treatment, the target layer can be grown bottom-up without growing significant amount of material on sidewalls of the structure. For example, plasma can be generated from a gas mixture including a process gas. The plasma can include reactive species such as charged particles (e.g., ions) and/or neutral particles (e.g., atoms and/or radicals). The surface of the at least one exposed region of the target layer reacts with the plasma, which results in the etching of the exposed portions of the target layer. The type of process gas within the gas mixture is dependent on the material of the target layer. The reactions between the target layer and the reactive species can generate volatile etch byproducts (e.g., smaller molecules), which can be removed by a vacuum system. The gas mixture can further include an inert gas. For example, the inert gas can include a noble gas, such as helium (He), argon (Ar), neon (Ne), xenon (Xe), krypton (Kr), radon (Rn), etc. In some implementations, the gas mixture can include a mixture of inert gases (i.e., an inert gas mixture). The inert gas (or inert gas mixture) can be used to dilute the gas mixture to control material deposition.

In some embodiments, a dielectric material is a silicon-containing dielectric material. Examples of silicon containing dielectric materials include silicon oxide (SiO_x) materials, silicon nitride (SiN) materials, silicon carbide (SiC) materials, silicon oxycarbide (SiCO) materials, silicon oxycarbonitride (SiCON) materials, etc.

In some embodiments, an RID process is a single source precursor process that utilizes a single source precursor to form a dielectric material. More specifically, a single source precursor can be used with a suitable plasma.

In some embodiments, the dielectric material is a silicon oxide material (e.g., SiO₂) Examples of single source precursors for RID processes that can be used to form silicon oxide materials include siloxanes and siloxane derivatives (e.g., replacing at least one hydrogen (H) atom in a siloxane with a methyl group (CH₃). Examples of suitable plasmas for RID processes that can be used to form silicon oxide materials include oxygen (O₂)-containing plasmas and/or ammonia (NH₃)-containing plasmas.

In some embodiments, the dielectric material is a silicon nitride material (e.g., Si₃N₄). Examples of single source precursors for RID processes that can be used to form silicon nitride materials include silazanes or aminosilanes, and derivatives of silazanes or aminosilanes. Examples of suitable plasmas for RID processes that can be used to form silicon nitride materials include NH₃containing plasmas.

In some embodiments, the dielectric material is a silicon carbide material (e.g., Sic). Examples of single source precursors for RID processes used to form silicon carbide materials include carbosilanes and carbosilane derivatives (e.g., replacing at least one H atom in a carobsilane with CH₃).