120B, and the dielectric film 160 is also located adjacent to the portion of the bonding material 126.

FIG. 3 is a schematic top view of a MEMS package 100 according to another embodiment of the present disclosure. In the MEMS package 100 of FIG. 3, a hole 142 is disposed in the second bond seal ring 125B and vertically passes through the second bond seal ring 125B in the Z-axis direction. From the top-view, the hole 142 is surrounded by the second bond seal ring 125B without laterally passing through the second bond seal ring 125B in the Y-axis or X-axis direction. Moreover, in this embodiment, the pre-cut line 152 adjacent to the second bond seal ring 125B has a protruding portion (terrace structure) 152P corresponding to the location of the hole 142. The protruding portion 152P is protruded outwards away from the hole 142 to provide a stage structure outside a vent hole formed through the hole 142. In some embodiments, multiple holes 142 are formed in the second bond seal ring 125B, and the pre-cut line 152 has multiple protruding portions 152P corresponding to the holes 142. The details of other features of the MEMS package 100 of FIG. 3 may refer to the aforementioned descriptions of the MEMS package 100 of FIG. 1, and not repeated herein.

FIG. 4 is a schematic cross-sectional view of a MEMS package 100 according to another embodiment of the present disclosure. The MEMS package 100 includes the hole 142 disposed in the second bond seal ring 125B. The hole 142 vertically passes through the second bond seal ring 125B in the Z-axis direction and is further extended to pass through the second device substrate 120B. In this embodiment, a portion of the second bonding layer 116B between the second device substrate 120B and the second handle substrate 110B is removed by an etching process through the hole 142 to form a vent hole 141 in the second bonding layer 116B. As shown in FIG. 4, in some embodiments, the vent hole 141 is laterally extended along the X-axis direction between the second device substrate 120B and the second handle substrate 110B. Moreover, the vent hole 141 is connected to the second cavity 114 and the hole 142. The second pressure P2 in the second cavity 114 is adjusted to a desired vacuum level through the vent hole 141, so that the second pressure P2 in the second cavity 114 is different from the first pressure P1 in the first cavity 112.

Furthermore, in this embodiment, as shown in FIG. 3, the pre-cut line 152 adjacent to the second bond seal ring 125B has the protruding portion 152P. After a sawing process is performed on the scribe line SL, as shown in FIG. 4, the second device substrate 120B and the second handle substrate 110B construct a step structure 150 adjacent to the hole 142, and the vent hole 141 formed through the hole 142 is located in the step structure 150. Moreover, an anti-stiction coating layer 145 may be conformally disposed on the second device substrate 120B to wrap around the second MEMS device 124 through the vent hole 141 during the process step of adjusting the pressure in the second cavity 114. After the second pressure P2 in the second cavity 114 is adjusted to the desired vacuum level and the anti-stiction coating layer 145 is formed on the second MEMS device 124 through the vent hole 141, a sealing layer 170 is deposited on the stage of the step structure 150 to reseal the vent hole 141. A portion of the vent hole 141 is filled with the sealing layer 170. In addition, a dielectric film 160 is formed on the passivation layer 134 of the interconnect layer 132 and located adjacent to the first bond seal ring 125A and the second bond seal ring 125B. In some embodiments, the sealing layer 170 and the dielectric film 160 may be formed by the same deposition process and have the same composition, for example, silicon oxide.

In some embodiments, as shown in FIG. 4, the first bonding layer 116A is disposed between the first device substrate 120A and the first handle substrate 110A, and not extended onto the sidewalls and the bottom surface of the first cavity 112. The second bonding layer 116B is also disposed between the second device substrate 120B and the second handle substrate 110B, and not extended onto the sidewalls and the bottom surface of the second cavity 114. A portion of the second bonding layer 116B corresponding to the hole 142 is removed to form the vent hole 141. In some embodiments, in the Z-axis direction, the height of the vent hole 141 may be the same as or slightly smaller than the thickness of the second bonding layer 116B. For example, the height of the vent hole 141 may be about 1000 Å to about 2000 Å. In some embodiments, the width of the vet hole 141 in the Y-axis direction may be in a range of about 1 μm to about 100 μm. The length of the vet hole 141 in the X-axis direction is the same as the width of the second bonding layer 116B. The details of other features of the MEMS package 100 of FIG. 4 may refer to the aforementioned descriptions of the MEMS package 100 of FIG. 2, and not repeated herein.

FIG. 5, FIG. 6 and FIG. 7 are schematic cross-sectional views of some intermediate stages of a method of fabricating a MEMS package according to one embodiment of the present disclosure. Referring to FIG. 5, in step S101, firstly, a handle wafer 110 such as a silicon wafer is provided. A first cavity 112 and a second cavity 114 are formed by an etching process performed on a surface 110F of the handle wafer 110. Then, a bonding layer 116 is conformally deposited on the handle wafer 110 and in the first cavity 112 and the second cavity 114 to wrap around the handle wafer 110. The composition of the bonding layer 116 is, for example, silicon oxide. The bonding layer 116 may be formed by a thermal oxidation or a deposition process. In addition, a device wafer 120 such as a silicon wafer is provided and bonded on the surface 110F of the handle wafer 110 to cover the first cavity 112 and the second cavity 114. The device wafer 120 is patterned by photolithography and etching processes to form the first MEMS device 122 and the second MEMS device 124 laterally spaced apart from each other. The device wafer 120 includes the first device substrate 120A with the first MEMS device 122, the second device substrate 120B with the second MEMS device 124, and a portion 120P of the device wafer 120 between the first device substrate 120A and the second device substrate 120B. A pre-cut line 151 is formed in the device wafer 120