124 and the first point or region of the surface 106, or other value.

In some embodiments, the second measure of electrostatic field strength is generated based upon a second measure of intensity indicated by the electrical signal generated by the light sensor 136. The second measure of intensity is generated based upon filtered light filtered by the optical filter 134 from second light of the reflection signal 118, wherein the second light of the reflection signal 118 comprises light, of the laser signal 108, reflected by the second point or region of the surface 106 of the component 104. In some embodiments, the computer 140 performs one or more operations, such as one or more mathematical operations, using the second measure of intensity to determine the second measure of electrostatic field strength. The second measure of electrostatic field strength is a function of at least one of the second measure of intensity, a distance between the reflection detection device 124 and the second point or region of the surface 106, or other value.

In some embodiments, the computer 140 generates an electrostatic field strength map based upon the plurality of measures of electrostatic field strength. The electrostatic field strength map is indicative of the plurality of measures of electrostatic field strength. In some embodiments, the electrostatic field strength map is indicative of the plurality of points or regions, of the surface 106 of the component 104, associated with the plurality of measures of electrostatic field strength. In some embodiments, the electrostatic field strength map comprises an array of values, wherein a value in the array is associated with a point or region of the surface 106 of the component 104, and is indicative of a measure of electrostatic field strength associated with the point or region. In some embodiments, a first value of the array of values is associated with the first point or region of the surface 106, and is indicative of the first measure of electrostatic field strength. A second value of the array of values is associated with the second point or region of the surface 106, and is indicative of the second measure of electrostatic field strength.

In some embodiments, the electrostatic field strength map comprises an electrostatic field strength image. In some embodiments, the electrostatic field strength image is indicative of the plurality of measures of electrostatic field strength, and the plurality of points or regions, of the surface 106 of the component 104, associated with the plurality of measures of electrostatic field strength. In some embodiments, the computer 140 comprises an image signal processor configured to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a color-coded image, where a color of a pixel of the electrostatic field strength image is indicative of a measure of electrostatic field strength associated with a point, of the surface 106 of the component 104, corresponding to the pixel.

In some embodiments, the computer 140 determines a plurality of pixel colors of the electrostatic field strength image based upon the plurality of measures of electrostatic field strength. In some embodiments, the computer 140 determines a first pixel color, of the plurality of pixel colors, based upon the first measure of electrostatic field strength associated with the first point or region. The computer 140 generates one or more first pixels, of the electrostatic field strength image, according to the first pixel color. At least one of a shade, tint, tone, color, etc. of the first pixel color is based upon the first measure of electrostatic field strength. The one or more first pixels of the electrostatic field strength image correspond to the first point or region of the surface 106.

In some embodiments, the computer 140 determines a second pixel color, of the plurality of pixel colors, based upon the second measure of electrostatic field strength associated with the second point or region. The computer 140 generates one or more second pixels, of the electrostatic field strength image, according to the second pixel color. At least one of a shade, tint, tone, color, etc. of the second pixel color is based upon the measure of electrostatic field strength. The one or more second pixels of the electrostatic field strength image correspond to the second point or region of the surface 106.

In some embodiments, if the first measure of electrostatic field strength is different than the second measure of electrostatic field strength, at least one of a shade, tint, tone, color, etc. of the first pixel color is different than at least one of a shade, tint, tone, color, etc. of the second pixel color. In an embodiment, at least one of a first range of measures of electrostatic field strength correspond to red, a second range of measures of electrostatic field strength correspond to blue, a third range of measures of electrostatic field strength correspond to purple, etc. In some embodiments, the first range of measures of electrostatic field strength are associated with varying shades, tints, tones, etc. of red, wherein a higher measure of electrostatic field strength in the first range corresponds to a darker or lighter shade, tint, tone, etc. of red than a lower measure of electrostatic field strength in the first range.

In some embodiments, the apparatus 102 comprises an image sensor configured to generate a visual image of the component 104. In some embodiments, the image sensor is part of the computer 140, or is separate from the computer 140. The image sensor comprises at least one of a charge coupled device (CCD) image sensor, a complementary metal oxide semiconductor (CMOS) image sensor, a contact image sensor (CIS), recording film, or other device. The image sensor generates the visual image to be a visual representation of the component 104. In some embodiments, the computer 140, such as the image signal processor of the computer 140, generates the electrostatic field strength image based upon the plurality of measures of electrostatic field strength and the visual image. In some embodiments, the computer 140 generates the electrostatic field strength image using the visual image and the plurality of pixel colors determined based upon the plurality of measures of electrostatic field strength, such as by combining the visual image with the plurality of pixel colors to generate the electrostatic field strength image. In some embodiments, the computer 140 modifies the visual image based upon the plurality of pixel colors to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a visual representation of the component 104 and the plurality of measures of electrostatic field strength.

In some embodiments, the apparatus 102 is positioned facing the component 104 such that the laser signal 108 is emitted towards the component 104. In some embodiments, the apparatus 102 is positioned at least one of level with the component 104, over the component 104, under the component 104, within the component 104, outside the component 104, within a threshold distance of the component 104, touching the component 104, etc. In some embodiments, at least one of during operation of the component 104, before the operation of the component 104, or after the operation of the component 104, the apparatus 102 determines measures of electrostatic field strength associated with the component 104, generates electrostatic field strength maps associated with the component 104, or detects one or more electrostatic events associated with the component 104. In some embodiments, the operation of the component 104 corresponds to a state of the component 104 in which the component 104 is actively used to perform one or more operations, such as at least one of conduct fluid through a tube, perform CVD, perform plasma CVD, perform high density plasma CVD, perform surface treatment, perform plasma surface treatment, perform implantation process, perform PVD, perform plasma enhanced PVD, perform etching, perform dry etching, perform wet etching, perform plasma etching, activate a robot arm, etc.

In some embodiments, the component 104 is used in a facility, such as an industrial facility, in which semiconductor devices are fabricated. In some embodiments, the component 104 is used to perform one or more semiconductor fabrication acts corresponding to at least a part of a semiconductor fabrication process performed to at least partially fabricate the semiconductor devices. In some embodiments, the one or more semiconductor fabrication acts correspond to at least one of front-end-of-line (FEOL) fabrication, back-end-of-line (BEOL) fabrication, semi-completed product fabrication, or other types of semiconductor fabrication. In some embodiments, the component 104 corresponds to equipment that directly processes the semiconductor devices. In some embodiments, the component 104 corresponds to equipment that manages at least one of a temperature, an air pressure, a humidity, etc. of the facility. In some embodiments, the component 104 corresponds to equipment, such as tubes, valves, manifolds, power lines, etc., that is configured to supply tools in the facility with resources comprising at least one of gas, liquid, heat, energy, etc., wherein the resources are used by the tools to perform semiconductor fabrication acts. In some embodiments, the semiconductor devices comprise at least one of transistors, gate-all-around field-effect-transistors (GAA FETs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), fin field-effect-transistors (finFETs), two-dimensional (2D) devices, or other types of semiconductor devices.

In some embodiments, the apparatus 102 is in a fixed position, such as coupled to a fixed position mount. In some embodiments, the apparatus 102 is coupled to a mobile or portable device or vehicle. In some embodiments, the apparatus 102 is rotatable around an axis, such as coupled to a motor that automatically controls an angular position of the apparatus 102 with respect to the axis. In some embodiments, a scope for which the apparatus 102 at least one of determines the plurality of measures of electrostatic field strength or generates the electrostatic field strength map is adjustable. In some embodiments, increasing the scope corresponds to zooming-out such that at least one of the plurality of measures of electrostatic field strength or the electrostatic field strength map cover a larger area. In some embodiments, decreasing the scope corresponds to zooming-in such that at least one of the plurality of measures of electrostatic field strength or the electrostatic field strength map cover a smaller area.

Embodiments are contemplated in which at least some of the apparatus 102, such as at least one of the laser generation device 116 or the reflection detection device 124, is implemented in an inspection device that can be inserted through a cavity, such as in an endoscopy-like fashion. In some embodiments, the inspection device comprises merely some of the apparatus 102, and the inspection device is smaller than an implementation of the entirety of the apparatus 102 in a single package, and can thus be inserted through smaller openings and/or be positioned in smaller spaces than the single package. In some embodiments, the inspection device is positioned within the component 104, such as at least one of a process chamber, a valve manifold box, a tube, etc., such that at least one of measures of electrostatic field strength, electrostatic field strength maps, or electrostatic events are determined from within the component 104. Embodiments are contemplated in which the entirety of the apparatus 102 is implemented in a single package.

FIGS. 2A-2D illustrate generation of the electrostatic field strength image using the apparatus 102, according to some embodiments in which the component 104 comprises a first valve 204, a second valve 206, and a tube 208, such as an insulated tube configured to conduct fluid 210 comprising at least one of liquid or gas. FIG. 2A illustrates a perspective view of the apparatus 102 and the component 104, according to some embodiments. In some embodiments, the apparatus 102 is positioned facing the component 104, and emits the laser signal 108 (shown in FIG. 1) towards the component 104. The first valve 204 is at least one of a manual valve, an automatic valve, or other type of valve. The second valve 206 is at least one of a manual valve, an automatic valve, or other type of valve. In some embodiments, the fluid 210 is conducted from the second valve 206, through the tube 208, to the first valve 204.

FIG. 2B illustrates the visual image (shown with reference number 220) of the component 104 generated using the image sensor of the apparatus 102, according to some embodiments. The visual image 220 comprises a visual representation of the component 104. FIG. 2C illustrates a representation 230 of the plurality of pixel colors determined based upon the plurality of measures of electrostatic field strength, according to some embodiments.

FIG. 2D illustrates the electrostatic field strength map generated by the apparatus 102, according to some embodiments in which the electrostatic field strength map comprises an electrostatic field strength image 240. In some embodiments, the computer 140 combines the visual image 220 (shown in FIG. 2B) with the representation 230 of the plurality of pixel colors (shown in FIG. 2C) to generate the electrostatic field strength image 240 (shown in FIG. 2D). In some embodiments, the computer 140 modifies the visual image 220, based upon the plurality of pixel colors, to generate the electrostatic field strength image 240. In some embodiments, the electrostatic field strength image 240 comprises a visual representation of the component 104 and the plurality of measures of electrostatic field strength.

In some embodiments, the electrostatic field strength image 240 (shown in FIG. 2D) is displayed via a display 142 (shown in FIG. 1) of the apparatus 102. In some embodiments, the computer 140 updates the display 142 to display an updated and/or current electrostatic field strength image. The computer 140 updates the display 142 at least one of periodically, continuously, or in response to generating an updated and/or current electrostatic field strength image based upon at least one of updated and/or current measures of electrostatic field strength or an updated and/or current visual image generated using the image sensor. In accordance with some embodiments, an electrostatic field strength image displayed via the display 142 is a real-time representation of measures of electrostatic field strength of the component 104. Embodiments are contemplated in which the display 142 is separate from the apparatus 102, and is controlled to display the electrostatic field strength image 240 at least one of wirelessly or over a physical connection.

In some embodiments, the computer 140 detects an electrostatic event based upon the plurality of measures of electrostatic field strength. In some embodiments, the electrostatic event is detected based upon the electrostatic field strength map, such as the electrostatic field strength image 240. In some embodiments, the electrostatic event corresponds to at least one of an accumulation of electrostatic charge, an electrostatic field hotspot, or a potential ESD event on the component 104. If the electrostatic event is not detected or addressed, the electrostatic event can cause damage to the component 104 by at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the computer 140 detects the electrostatic event based upon a determination that one or more measures of electrostatic field strength, of the plurality of measures of electrostatic field strength, associated with one or more points or regions of the surface 106 of the component 104 exceed a threshold measure of electrostatic field strength. In some embodiments, the electrostatic event is determined to be associated with the one or more points or regions of the surface 106 of the component 104. In some embodiments, the computer 140 detects the electrostatic event based upon a determination that an area covered by the one or more points or regions exceeds a threshold size. In some embodiments, the one or more measures of electrostatic field strength exceeding the threshold measure of electrostatic field strength indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the computer 140 detects the electrostatic event based upon a determination that a change in electrostatic field strength, at one or more points or regions of the surface 106 of the component 104, exceeds a threshold change in electrostatic field strength. In some embodiments, the change in electrostatic field strength is determined based upon one or more first measures of electrostatic field strength, of the plurality of measures of electrostatic field strength, associated with the one or more points or regions of the surface 106 and one or more second measures of electrostatic field strength, associated with the one or more points or regions of the surface 106, previously determined by the apparatus 102. In some embodiments, the change in electrostatic field strength is determined based upon a difference between a measure of electrostatic field strength of the one or more first measures of electrostatic field strength and a measure of electrostatic field strength of the one or more second measures of electrostatic field strength. In some embodiments, the change in electrostatic field strength corresponds to an increase in electrostatic field strength at the one or more points or regions. In some embodiments, the change in electrostatic field strength exceeding the threshold change in electrostatic field strength indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the computer 140 detects the electrostatic event based upon a determination that one or more pixels, of the electrostatic field strength image 240, associated with one or more points or regions of the surface 106 of the component 104 are one or more colors of a defined set of colors associated with electrostatic events. In some embodiments, the electrostatic event is determined to be associated with the one or more points or regions of the surface 106 of the component 104. In some embodiments, the computer 140 detects the electrostatic event based upon at least one of a determination that the one or more pixels that are the one or more colors have a pixel density that exceeds a threshold pixel density or a determination that a quantity of the one or more pixels exceed a threshold quantity. In some embodiments, the one or more pixels at least one of being the one or more colors of the defined set of colors, having the pixel density that exceeds the threshold pixel density, or having the quantity that exceeds the threshold quantity indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the computer 140 detects the electrostatic event based upon identification of a change in pixel color of one or more pixels associated with one or more points or regions of the surface 106 of the component 104. In some embodiments, the change in pixel color of the one or more pixels is determined by comparing the electrostatic field strength image 240 and a second electrostatic field strength image previously generated by the apparatus 102. In some embodiments, based upon the one or more pixels associated with the change in pixel color, the electrostatic event is determined to be associated with the one or more points or regions of the surface 106 of the component 104. In some embodiments, the one or more pixels associated with the one or more points or regions undergoing the change in pixel color from the second electrostatic field strength image to the electrostatic field strength image 240 indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the computer 140 detects the electrostatic event based upon a pattern in the electrostatic field strength image 240, such as a pattern of pixels. In some embodiments, the electrostatic field strength image 240 is analyzed to identify the pattern. In some embodiments, the pattern corresponds to a set of pixels in the electrostatic field strength image 240. In some embodiments, the electrostatic event is detected based upon the pattern matching a defined pattern of pixels associated with electrostatic events. In some embodiments, the pattern is compared with a plurality of defined patterns of pixels associated with electrostatic events to determine that the pattern matches the defined pattern of pixels. In some embodiments, comparing the pattern with the defined pattern of pixels comprises determining a similarity score representative of a similarity, such as a visual similarity, between the pattern and the defined pattern of pixels. In some embodiments, the pattern is determined to match the defined pattern of pixels based upon a determination that the similarity score exceeds a threshold similarity score. In some embodiments, the pattern matching the defined pattern of pixels indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106 corresponding to the set of pixels of the pattern, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, electrostatic field strength maps generated by the apparatus 102 are monitored, such as monitored in real-time as the electrostatic field strength maps are generated, to detect the electrostatic event. In some embodiments, the computer 140 detects the electrostatic event based upon detection of an anomalous event. In some embodiments, one or more patterns of electrostatic field strength behavior are identified by monitoring the electrostatic field strength maps. In some embodiments, the one or more patterns are identified by performing pattern recognition. In some embodiments, the one or more patterns correspond to temporal patterns of electrostatic field strength over time that result from operation, such as typical operation, of the component 104. In some embodiments, the anomalous event is detected based upon identifying a deviation from the one or more patterns. In some embodiments, the deviation from the one or more patterns is associated with one or more points or regions of the surface 106. In some embodiments, the anomalous event indicates an increased likelihood of an event occurring, at the one or more points or regions of the surface 106 associated with the anomalous event, that can cause damage to the component 104, such as at least one of ESD, arcing, micro-arcing, or other event

In some embodiments, the computer 140 detects the electrostatic event using a trained machine learning model. In some embodiments, the trained machine learning model is trained using training information comprising electrostatic field strength maps, such as electrostatic field strength images, generated over a period of time. In some embodiments, the electrostatic field strength maps are retrieved from an electrostatic field strength map datastore used to store generated electrostatic field strength maps. In some embodiments, the electrostatic field strength maps are generated by the apparatus 102. In some embodiments, the electrostatic field strength maps are generated in association with at least one of the component 104 or one or more other components, such as where the electrostatic field strength maps are generated based upon electrostatic field strength measures, determined during the period of time, of at least one of the component 104 or the one or more other components. In some embodiments, the trained machine learning model comprises at least one of an artificial neural network, an artificial intelligence model, a pattern recognition model, a tree-based model, a machine learning model used to perform linear regression, a machine learning model used to perform logistic regression, a decision tree model, a support vector machine (SVM), a Bayesian network model, a k-Nearest Neighbors (k-NN) model, a K-Means model, a random forest model, a machine learning model used to perform dimensional reduction, a machine learning model used to perform gradient boosting, or other machine learning model. In some embodiments, the trained machine learning model is trained to perform electrostatic event detection to detect electrostatic events. In some embodiments, the trained machine learning model performs anomalous event detection to identify anomalous electrostatic field strength events considered to be electrostatic events. In some embodiments, the trained machine learning model performs pattern recognition to identify one or more patterns of measures of electrostatic field strength that result from operation, such as typical operation, of the component 104, and detects one or more electrostatic events by identifying a deviation from the one or more patterns. In some embodiments, the trained machine learning model is updated, such as updated periodically or continuously, using newly generated electrostatic field strength maps. In some embodiments, electrostatic field strength maps generated by the apparatus 102 are used to update the trained machine learning model in real-time as the electrostatic field strength maps are generated. In some embodiments, training and/or updating the trained machine learning model comprises adjusting trainable parameters of the trained machine learning model to increase an accuracy of electrostatic event detection performed using the trained machine learning model.

FIG. 2D illustrates a first electrostatic event 242 and a second electrostatic event 244 detected by the computer 140, according to some embodiments. In some embodiments, the first electrostatic event 242 is detected based upon one or more pixels associated with one or more points or regions corresponding to the first valve 204 (shown in FIG. 2A). In some embodiments, the first electrostatic event 242 is detected based upon a determination that the one or more pixels are one or more colors of the defined set of colors associated with electrostatic events. In some embodiments, the first electrostatic event 242 is detected based upon a determination that the one or more pixels are indicative of measures of electrostatic field strength that exceed the threshold measure of electrostatic field strength. In some embodiments, the first electrostatic event 242 is detected based upon a determination that a change in pixel color over time, of the one or more pixels, is indicative of a change in electrostatic field strength that exceeds the threshold change in electrostatic field strength. In some embodiments, the first electrostatic event 242 is detected using the trained machine learning model. In some embodiments, the first electrostatic event 242 is a result of the fluid 210 (shown in FIG. 2A), such as high resistance fluid, flowing through at least one of the tube 208 or the first valve 204 and introducing electrostatic charge to the first valve 204.

FIG. 3A illustrates a perspective view of the apparatus 102 and the component 104, according to some embodiments. In some embodiments, the component 104 comprises at least a portion of semiconductor processing equipment. The semiconductor processing equipment comprises at least one of a semiconductor processing chamber 304, a semiconductor wafer 310 (e.g., substrate, die, etc. and/or device (e.g., transistor, diode, etc.) formed therein, thereon, therefrom, etc. comprising semiconductor and/or other material(s)), a target 306, a wafer support 312, or one or more other components. In some embodiments, the semiconductor wafer 310 and/or one or more other components are merely associated with the semiconductor processing equipment and thus are not necessarily part of the semiconductor processing equipment (e.g., are merely placed within the semiconductor processing equipment to be processed). In some embodiments, the semiconductor processing equipment comprises PVD equipment, CVD equipment, plating equipment, etching equipment, lithography equipment, CMP equipment, equipment that utilizes plasma 314, or other equipment used to process the semiconductor wafer 310 in the semiconductor processing chamber 304. In some embodiments, the apparatus 102 is positioned outside the semiconductor processing chamber 304, and utilizes a window 308 in an outer wall of the semiconductor processing chamber 304 to generate electrostatic field strength maps associated with electrostatic field strength measurements of an interior of the semiconductor processing chamber 304, thereby enabling the apparatus 102 to detect one or more electrostatic events within the semiconductor processing chamber 304. In some embodiments, the one or more electrostatic events comprise an electrostatic event caused by the plasma 314, such as high-density plasma. In some embodiments, the window 308 is an opening, or is made of a material, such as a transparent material, through which the laser signal 108 and the reflection signal 118 can pass. Embodiments are contemplated in which the apparatus 102 generates electrostatic field strength maps associated with electrostatic field strength measurements of an exterior of the semiconductor processing chamber 304, such as the outer wall of the semiconductor processing chamber 304, thereby enabling the apparatus 102 to detect one or more electrostatic events at the exterior of the semiconductor processing chamber 304.

FIG. 3B illustrates a perspective view of the apparatus 102 and the component 104 comprising at least a portion of the semiconductor processing equipment, according to some embodiments in which the apparatus 102 is positioned inside the semiconductor processing chamber 304. Accordingly, the apparatus 102 generates electrostatic field strength maps associated with electrostatic field strength measurements of the interior of the semiconductor processing chamber 304, thereby enabling the apparatus 102 to detect one or more electrostatic events within the semiconductor processing chamber 304.

FIGS. 4A-4B illustrate operation of the apparatus 102, according to some embodiments in which the component 104 comprises at least one of a valve manifold box 414 or one or more tubes coupled to the valve manifold box 414. FIG. 4A illustrates a perspective view of the apparatus 102 and the component 104, according to some embodiments. In some embodiments, the apparatus 102 is positioned facing the component 104. In some embodiments, the valve manifold box 414 is configured to distribute, using the one or more tubes, fluid from a source to one or more tools. In some embodiments, the tools use the fluid, comprising at least one of gas or liquid, for fabricating semiconductor devices. In some embodiments, the one or more tubes comprise at least one of a tube 404, a tube 406, a tube 408, or a tube 410. In some embodiments, the valve manifold box 414 comprises one or more gauges to display measurements, such as pressure measurements, associated with at least one of valves or tubes that are within or coupled to the valve manifold box 414. The one or more gauges comprise at least one of a gauge 418, a gauge 420, a gauge 422, or a gauge 424.

FIG. 4B illustrates an electrostatic field strength image 432 generated by the apparatus 102, according to some embodiments. In some embodiments, the electrostatic field strength image 432 is generated using measures of electrostatic field strength across points or regions of the component 104 comprising at least one of the valve manifold box 414 or the one or more tubes, such as using one or more of the techniques shown in and/or described with respect to FIGS. 2A-2D. In some embodiments, the electrostatic field strength image 240 is a visual representation of the component 104 and the plurality of measures of electrostatic field strength.

A third electrostatic event 428 and a fourth electrostatic event 430 are detected by the computer 140, according to some embodiments. In some embodiments, the third electrostatic event 428 is detected based upon one or more pixels associated with one or more points or regions corresponding to the valve manifold box 414 (shown in FIG. 4A). In some embodiments, the third electrostatic event 428 is detected based upon a determination that the one or more pixels are one or more colors of the defined set of colors associated with electrostatic events. In some embodiments, the third electrostatic event 428 is detected based upon a determination that the one or more pixels are indicative of measures of electrostatic field strength that exceed the threshold measure of electrostatic field strength. In some embodiments, the third electrostatic event 428 is detected based upon a determination that a change in pixel color over time, of the one or more pixels, is indicative of a change in electrostatic field strength that exceeds the threshold change in electrostatic field strength. In some embodiments, the third electrostatic event 428 is detected using the trained machine learning model. In some embodiments, at least one of the third electrostatic event 428 or the fourth electrostatic event 430 is a result of fluid, such as high resistance fluid, flowing through the valve manifold box 414.

FIG. 5 illustrates a schematic view of a system 500 according to some embodiments. The system 500 comprises at least one of a set of electrostatic field monitoring devices 504 comprising the apparatus 102, facility equipment 502 of a facility, a controller 514, an electrostatic information display system 506, or one or more client devices 508. The set of electrostatic field monitoring devices 504 comprises electrostatic field monitoring devices distributed at various locations of the facility. The electrostatic field monitoring devices are used to perform electrostatic field strength measurements of a plurality of components, such as semiconductor fabrication components, throughout the facility. The plurality of components comprise at least one of (i) one or more components comprising PVD equipment, such as plasma enhanced PVD equipment, (ii) one or more components comprising CVD equipment, (iii) one or more components comprising plating equipment, (iv) one or more components comprising etching equipment, (v) one or more components comprising lithography equipment, (vi) one or more components comprising CMP equipment, (vii) one or more components comprising semiconductor wafer storage equipment, such as one or more FOUPs, (viii) one or more components that that utilize plasma, (ix) one or more components comprising one or more tubes, such as one or more pipes or one or more other type of tubes that are configured to conduct at least one of liquid or gas, (x) one or more manifolds, (xi) one or more components comprising fluid storage equipment, (xii) one or more processing chambers, (xiii) one or more pumps, (xiv) one or more robotic arms, (xv) one or more stocker tools, (xvi) one or more management tools, (xvii) one or more handling tools, (xviii) inspection equipment, (xix) one or more components of an automated material handling system, (xx) one or more components of an automated transport system, (xxi) a lorry tank, (xxii) one or more masks, (xxiii) one or more mask boxes, or (xxiv) one or more other components.

In some embodiments, the set of electrostatic field monitoring devices 504 transmit a set of electrostatic field signals 512 to the controller 514. In some embodiments, each signal of the set of electrostatic field signals 512 is transmitted by an electrostatic field monitoring device of the set of electrostatic field monitoring devices 504. In some embodiments, a first electrostatic field signal of the set of electrostatic field signals 512 is provided by a first electrostatic field monitoring device of the set of electrostatic field monitoring devices 504, a second electrostatic field signal of the set of electrostatic field signals 512 is provided by a second electrostatic field monitoring device of the set of electrostatic field monitoring devices 504, etc.

In some embodiments, the first electrostatic field monitoring device is positioned at least one of proximate a first component of the plurality of components or facing the first component, and is configured to at least one of (i) determine measures of electrostatic field strength associated with the first component, (ii) generate electrostatic field strength maps associated with the first component, or (iii) detect electrostatic events associated with the first component. In some embodiments, the first electrostatic field signal is indicative of at least one of the measures of electrostatic field strength associated with the first component or the electrostatic field strength maps associated with the first component. In some embodiments, in response to the first electrostatic field monitoring device detecting an electrostatic event, the first electrostatic field monitoring device includes an indication of the electrostatic event in the first electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

In some embodiments, the second electrostatic field monitoring device is positioned at least one of proximate a second component of the plurality of components or facing the second component, and is configured to at least one of (i) determine measures of electrostatic field strength associated with the second component, (ii) generate electrostatic field strength maps associated with the second component, or (iii) detect electrostatic events associated with the second component. In some embodiments, the second electrostatic field signal is indicative of at least one of the measures of electrostatic field strength associated with the second component or the electrostatic field strength maps associated with the second component. In some embodiments, in response to the second electrostatic field monitoring device detecting an electrostatic event, the second electrostatic field monitoring device includes an indication of the electrostatic event in the second electrostatic field signal, thereby informing the controller 514 of the electrostatic event.

Thus, in accordance with some embodiments, the set of electrostatic field monitoring devices 504 determine electrostatic field strength information associated with the plurality of components throughout the facility, and provide the electrostatic field strength information to the controller 514 via the set of electrostatic field signals 512. In some embodiments, the electrostatic field strength information of the set of electrostatic field signals 512 is indicative of one or more electrostatic events detected by one or more electrostatic field monitoring devices of the set of electrostatic field monitoring devices 504. In some embodiments, instead of the one or more electrostatic events being detected by the set of electrostatic field monitoring devices 504, the set of electrostatic field signals 512 provided by the set of electrostatic field monitoring devices 504 are indicative of at least one of measures of electrostatic field strength or electrostatic field strength maps associated with the plurality of components, wherein the at least one of the measures of electrostatic field strength or the electrostatic field strength maps are analyzed by the controller 514 to detect the one or more electrostatic events.

In some embodiments, the controller 514 comprises a set of status indicators 520 associated with components of the plurality of components of the facility. In some embodiments, an indicator of the set of status indicators 520 comprises a light, such as indicator light, that indicates whether or not an electrostatic event at a component in the facility is detected, wherein the light being in a first state indicates that an electrostatic event at the component is detected and/or the light being in a second state indicates that an electrostatic event at the component is not detected. In some embodiments, the first state corresponds to a first color emitted by the light, such as red or other color, and the second state corresponds to a second color emitted by the light, such as green or other color. The set of status indicators comprises at least one of a first indicator “CP1” associated with the first component, a second indicator “CP2” associated with the second component, a third indicator “CP3” associated with a third component of the plurality of components, a fourth indicator “CP4” associated with a fourth component of the plurality of components, or other indicator.

In some embodiments, the controller 514 determines electrostatic status information associated with the plurality of components of the facility. The electrostatic status information indicates at least one of whether or not an electrostatic event at a component of the plurality of components is detected, one or more components of the plurality of components associated with one or more detected electrostatic events, or other information.

In some embodiments, the controller 514 provides one or more first signals 510 to the facility equipment 502. In some embodiments, the one or more first signals 510 are used to control at least some of the facility equipment 502, such as one, some, and/or all of the plurality of components of the facility. In some embodiments, the one or more first signals 510 are generated using a signal generator of the controller 514. The one or more first signals 510 are indicative of at least one of the electrostatic status information or other information. In some embodiments, the controller 514 transmits the one or more first signals 510 to the facility equipment 502 wirelessly, such as using a wireless communication device of the controller 514. In some embodiments, the controller 514 transmits the one or more first signals 510 to the facility equipment 502 over a physical connection between the controller 514 and the facility equipment 502.

In some embodiments, the controller 514 transmits a second signal 518 to the electrostatic information display system 506. The second signal 518 is generated using the signal generator of the controller 514. In some embodiments, the second signal 518 is indicative of one or more electrostatic field strength maps, such as one or more electrostatic field strength images, generated using electrostatic field monitoring devices of the set of electrostatic field monitoring devices 504. In some embodiments, the second signal 518 is indicative of one or more detected electrostatic events. In some embodiments, the controller 514 transmits the second signal 518 to the electrostatic information display system 506 wirelessly, such as using the wireless communication device of the controller 514. In some embodiments, the controller 514 transmits the second signal 518 to the electrostatic information display system 506 over a physical connection between the controller 514 and the electrostatic information display system 506.

FIG. 6 illustrates the electrostatic information display system 506 displaying information, according to some embodiments. In some embodiments, a display 602 of the electrostatic information display system 560 is controlled to display at least one of one or more electrostatic field strength maps, one or more electrostatic field strength measures, alerts of one or more detected electrostatic events, etc.

In some embodiments, the display 602 displays a first alert 604 associated with the first electrostatic event 242 and the second electrostatic event 244 associated with at least one of the first valve 204, the second valve 206, or the tube 208 (shown in FIG. 2A). In some embodiments, the first alert 604 comprises information “Valve System 3X4Y” that identifies where the first electrostatic event 242 and the second electrostatic event 244 are located. In some embodiments, the first alert 604 comprises a representation of the electrostatic field strength image 240. In some embodiments, the representation of the electrostatic field strength image 240 comprises indications 610 and 612 that overlay the electrostatic field strength image 240 and identify regions corresponding to the first electrostatic event 242 and the second electrostatic event 244.

In some embodiments, the display 602 displays a second alert 606 associated with the third electrostatic event 428 and the fourth electrostatic event 430 associated with the valve manifold box 414 (shown in FIG. 4A). In some embodiments, the second alert 606 comprises information “Valve Manifold Box Y22” that identifies where the third electrostatic event 428 and the fourth electrostatic event 430 are located. In some embodiments, the second alert 606 comprises a representation of the electrostatic field strength image 432. In some embodiments, the representation of the electrostatic field strength image 432 comprises indications 614 and 616 that overlay the electrostatic field strength image 432 and identify regions corresponding to the third electrostatic event 428 and the fourth electrostatic event 430.

Thus, in accordance with some embodiments, in response to detection of an electrostatic event in the facility, the electrostatic information display system 506 automatically alerts a viewer of the display 602 of the electrostatic event and where the electrostatic event is located, thereby enabling the viewer to address the electrostatic event before the electrostatic event causes damage to one or more components in the facility by at least one of ESD, arcing, micro-arcing, or other event.

In some embodiments, the controller 514 (shown in FIG. 5) transmits a third signal 516 to one or more client devices 508. The one or more client devices 508 comprise at least one of a phone, a smartphone, a mobile phone, a landline, a laptop, a desktop computer, hardware, or other type of client device. The third signal 516 is generated using the signal generator of the controller 514. In some embodiments, the third signal 516 is indicative of one or more electrostatic field strength maps, such as one or more electrostatic field strength images, generated using electrostatic field monitoring devices of the set of electrostatic field monitoring devices 504. In some embodiments, the third signal 516 is indicative of one or more detected electrostatic events. In some embodiments, the controller 514 transmits the third signal 516 to a client device of the one or more client devices 508 wirelessly, such as using the wireless communication device of the controller 514. In some embodiments, the controller 514 transmits the third signal 516 to a client device of the one or more client devices 508 over a physical connection between the controller 514 and the client device. In some embodiments, a client device of the one or more client devices 508 triggers an alarm based upon the third signal 516. In some embodiments, the client device triggers the alarm based upon the third signal 516 indicating that an electrostatic event is detected in the facility. In some embodiments, in response to triggering the alarm, an alarm message is displayed via the client device. The alarm message comprises at least one of an indication that an electrostatic event is detected in the facility, one or more indications of one or more components of the facility at which an electrostatic event is detected, or other indication. In some embodiments, an alarm sound is output via a speaker connected to the client device in response to triggering the alarm. In some embodiments, the third signal 516 comprises a message, such as at least one of an email, a text message, etc., transmitted in response to detecting an electrostatic event in the facility. In some embodiments, in response to detecting an electrostatic event in the facility, a telephonic call is made to a client device, such as a landline or a mobile phone, of the one or more client devices 508, such as using a dialer of the controller 514.

In some embodiments, the set of electrostatic field signals 512 are used as feedback based upon which operation of the facility equipment 502 is controlled by the controller 514. In some embodiments, the controller 514 controls operation of the facility equipment 502 based upon at least one of the electrostatic status information associated with the plurality of components of the facility, one or more detected electrostatic events, or other information. In some embodiments, operation of the facility equipment 502 is controlled using the one or more first signals 510. In some embodiments, a signal of the one or more first signals 510 is indicative of one or more instructions.

In some embodiments, equipment of the facility equipment 502 ceases operation based upon a signal of the one or more first signals 510, received by the equipment, at least one of indicating that an electrostatic event is detected at a component associated with the equipment or indicating an instruction to cease the operation of the equipment. In some embodiments, the signal indicates the instruction to cease the operation of the equipment based upon a determination, by the controller 514, that an electrostatic event is detected at the component associated with the equipment. In some embodiments, the component is at least one of connected to or a part of the equipment that ceases operation. In some embodiments, ceasing operation of the equipment comprises at least one of powering off one or more components of the equipment, disconnecting a power supply from one or more components of the equipment, the equipment entering a mode in which the equipment does not perform one or more operations, or other action.

In some embodiments, the equipment transfers from a first mode to a second mode based upon the signal at least one of indicating that an electrostatic event is detected or indicating an instruction to transfer from the first mode to the second mode. In some embodiments, the first mode is a mode in which the equipment performs one or more first operations and the second mode is a mode in which the equipment performs one or more second operations different than the one or more first operations. In some embodiments, the first mode is a mode in which at least one of a component of the equipment is unlocked or access to the component is not blocked and the second mode is a mode in which at least one of the component is locked or access to the component is blocked. In some embodiments, the first mode is a mode in which at least one of one or more functions of the equipment are enabled or initiation of a new process using the one or more functions is not blocked and the second mode is a mode in which at least one of the one or more functions of the equipment are disabled or initiation of a new process using the one or more functions is blocked.

Thus, in accordance with some embodiments, in response to detection of an electrostatic event in the facility, the controller 514 controls the equipment of the facility equipment 502 to automatically perform one or more actions, comprising at least one of cease operation, change modes, block one or more functions, or other action, that prevent the detected electrostatic event from causing damage to one or more components in the facility by at least one of ESD, arcing, micro-arcing, or other event.

A method 700 of determining measures of electrostatic field strength is illustrated in FIG. 7 in accordance with some embodiments. At 702, a laser signal is emitted to a semiconductor fabrication component. In some embodiments, the laser signal corresponds to the laser signal 108, and the semiconductor fabrication component corresponds to the component 104. At 704, a reflection signal is received. The reflection signal comprises light, of the laser signal, reflected by a surface of the semiconductor fabrication component. In some embodiments, the reflection signal corresponds to the reflection signal 118. At 706, the reflection signal is filtered to provide filtered light that has a wavelength within a defined range of wavelengths. In some embodiments, the defined range of wavelengths corresponds to the defined range of wavelengths 128. At 708, an electrical signal is generated based upon the filtered light. At 710, measures of electrostatic field strength at the surface of the semiconductor fabrication component are determined based upon the electrical signal.

A method 800 of determining measures of electrostatic field strength and/or detecting an electrostatic event is illustrated in FIG. 8 in accordance with some embodiments. At 802, a laser signal is emitted to a semiconductor fabrication component. In some embodiments, the laser signal corresponds to the laser signal 108, and the semiconductor fabrication component corresponds to the component 104. At 804, a reflection signal is received. The reflection signal comprises light, of the laser signal, reflected by a surface of the semiconductor fabrication component. In some embodiments, the reflection signal corresponds to the reflection signal 118. At 806, the reflection signal is filtered to provide filtered light that has a wavelength within a defined range of wavelengths. In some embodiments, the defined range of wavelengths corresponds to the defined range of wavelengths 128. At 808, an electrical signal is generated based upon the filtered light. At 810, measures of electrostatic field strength at the surface of the semiconductor fabrication component are determined based upon the electrical signal. At 812, an electrostatic field strength map is generated based upon the measures of electrostatic field strength. In some embodiments, the electrostatic field strength map comprises the electrostatic field strength image 240 or the electrostatic field strength image 432. At 814, at least one of the electrostatic field strength map is displayed on a display, or an electrostatic event is detected based upon the electrostatic field strength map. In some embodiments, the display corresponds to at least one of the display 142 or the display 602. In some embodiments, the electrostatic event corresponds to the first electrostatic event 242, the second electrostatic event 244, the third electrostatic event 428, or the fourth electrostatic event 430.

A semiconductor processing method 900 is illustrated in FIG. 9, in accordance with some embodiments. At 902, a semiconductor wafer is received in a processing chamber of a semiconductor fabrication component. In some embodiments, at least one of the semiconductor wafer corresponds to the semiconductor wafer 310, the processing chamber corresponds to the semiconductor processing chamber 304, or the semiconductor fabrication component corresponds to the component 104. In some embodiments, the semiconductor wafer is positioned on a wafer support, such as the wafer support 312, in the processing chamber. In some embodiments, the semiconductor wafer comprises at least one of a semiconductor substrate, one or more semiconductor layers, one or more epitaxial layers, etc. At 904, a laser signal is emitted to the semiconductor wafer. In some embodiments, the laser signal corresponds to the laser signal 108. At 906, a reflection signal is received. The reflection signal comprises light, of the laser signal, reflected by a surface of the semiconductor wafer. In some embodiments, the reflection signal corresponds to the reflection signal 118. At 908, the reflection signal is filtered to provide filtered light that has a wavelength within a defined range of wavelengths. In some embodiments, the defined range of wavelengths corresponds to the defined range of wavelengths 128. At 910, an electrical signal is generated based upon the filtered light. In an example, the electrical signal is indicative of a set of electrical signal data determined based upon the filtered light, such as representative of information regarding wavelength, frequency, magnitude, etc. At 912, one or more measures of electrostatic field strength at the surface of the semiconductor wafer are determined based upon the electrical signal. In some embodiments, the one or more measures of electrostatic field strength are determined based upon the set of electrical signal data. At 914, using the semiconductor fabrication component, a semiconductor fabrication process is performed on the semiconductor wafer based upon the one or more measures of electrostatic field strength. In some embodiments, one or more parameters of the semiconductor fabrication process are controlled based upon the one or more measures of electrostatic field strength.

In some embodiments, the semiconductor fabrication process is started in response to a determination that a first measure of electrostatic field strength of the one or more measures of electrostatic field strength meets a first threshold, such as a first threshold measure of electrostatic field strength. In some embodiments, the semiconductor fabrication component initiates performing the semiconductor fabrication process when the semiconductor fabrication process is started. In some embodiments, the first measure of electrostatic field strength meets the first threshold when the first measure of electrostatic field strength exceeds the first threshold. In some embodiments, the first measure of electrostatic field strength meets the first threshold when the first measure of electrostatic field strength is less than the first threshold. In some embodiments, the semiconductor fabrication process is started in response to a determination that one, some, and/or all of the one or more measures of electrostatic field strength meet the first threshold. In some embodiments, the semiconductor fabrication process is started in response to a determination that at least a threshold proportion of the one or more measures of electrostatic field strength meet the first threshold.

In some embodiments, the semiconductor fabrication process is completed in response to a determination that a second measure of electrostatic field strength of the one or more measures of electrostatic field strength meets a second threshold, such as a second threshold measure of electrostatic field strength. The second measure of electrostatic field strength is the same as or different than the first measure of electrostatic field strength. The second threshold is the same as or different than the first threshold. In some embodiments, the semiconductor fabrication component initiates one or more completion acts of the semiconductor fabrication process to complete the semiconductor fabrication process. In some embodiments, the one or more completion acts comprise at least one of rinsing the semiconductor wafer, drying the semiconductor wafer, or other completion act. In some embodiments, the semiconductor fabrication component stops performing acts of the semiconductor fabrication process to complete the semiconductor fabrication process. In some embodiments, the second measure of electrostatic field strength meets the second threshold when the second measure of electrostatic field strength exceeds the second threshold. In some embodiments, the second measure of electrostatic field strength meets the second threshold when the second measure of electrostatic field strength is less than the second threshold. In some embodiments, the semiconductor fabrication process is completed in response to a determination that one, some, and/or all of the one or more measures of electrostatic field strength meet the second threshold. In some embodiments, the semiconductor fabrication process is completed in response to a determination that at least a threshold proportion of the one or more measures of electrostatic field strength meet the second threshold.