240 generate a surface acoustic wave having a wavelength λ or L.

The first acoustic device 210 is supported by a frame 270 on the second acoustic wave device 240. The first and second acoustic wave resonators or devices or dies 210, 240 each have support layer or substrate 216, 246, a functional layer 214, 244 disposed over the support layer 216, 246, a piezoelectric layer 212, 242 disposed over the functional layer 214, 244, and an interdigital transducer (IDT) electrode 218, 248 disposed on the piezoelectric layer 212, 242. In some implementations, the functional layer 214, 244 is excluded. The first and second acoustic wave resonators or devices or dies 210, 240 therefore have a multi-layer piezoelectric substrate (MPS) (e.g., are MPS dies). In one implementation, only the first acoustic wave device 210 has a multi-layer piezoelectric substrate (MPS) and the second acoustic wave device 240 has a piezoelectric layer 242 (e.g., but does not have a multi-layer piezoelectric substrate). Vias 222 extend between metal layers 220, 250 attached to the IDT electrodes 218, 248 of the first and second acoustic wave resonators or devices or dies 210, 240. The second acoustic wave device 240 has vias 254 that extend from the IDT electrode 248 to electrodes 256 on an opposite side of the support layer 246 from the IDT electrode 248. The second acoustic wave device 240 is spaced apart from and inverted relative to the first acoustic wave device 210 so that the second interdigital transducer electrode 248 is spaced apart from (e.g., spaced below) and faces the first interdigital transducer electrode 218.

In one implementation, the first and second acoustic wave devices 210, 240 can have the same materials and dimensions. In another implementation, the first and second acoustic wave devices 210, 240 can have different materials and/or dimensions. In one example, as shown in FIGS. 3-4, the functional layer 214, 244 is coextensive (e.g., extends across the same area, extends along the same length) with the support layer or substrate 216, 246. In one example, as shown in FIGS. 3-4, the piezoelectric layer 212, 242 is coextensive (e.g., extends across the same area, extends along the same length) with the functional layer 214, 244. In another implementation, as discussed further below, one or both of the functional layer 214, 244 and piezoelectric layer 212, 242 is not coextensive with (e.g., extends across a smaller area than, extends along a shorter length than) the support layer or substrate 216, 246.

With respect to the first acoustic wave device 210, the piezoelectric layer 212 can have a thickness TT1, the functional layer 214 can have a thickness TT2 and the support layer or substrate 216 can have a thickness TT3. The thickness TT3 of the support layer 216 is greater than the thickness TT1, TT2 of the piezoelectric layer 212 and the functional layer 214. Optionally, the thickness TT1 of the piezoelectric layer 212 is substantially equal to the thickness TT2 of the functional layer 214.

With respect to the second acoustic wave device 240, the piezoelectric layer 242 can have a thickness TB1, the functional layer 244 can have a thickness TB2 and the support layer or substrate 246 can have a thickness TB3. The thickness TB3 of the support layer 246 is greater than the thickness TB1, TB2 of the piezoelectric layer 242 and the functional layer 244. Optionally, the thickness TB1 of the piezoelectric layer 242 is substantially equal to the thickness TB2 of the functional layer 244.

In one implementation the thickness TT3, TB3 of the support layers 216, 246 are substantially the same. In one implementation the thickness TT2, TB2 of the functional layers 214, 244 are substantially the same. In one implementation the thickness TT1, TB1 of the piezoelectric layers 212, 242 are substantially the same.

The support layers or substrates 216, 246 of the first and second acoustic wave resonators or devices or dies 210, 240 are made of a material with high thermal conductivity. In one example, the support layers 216, 246 are made of silicon. In another example, the support layers 216, 246 are made of aluminum nitride (AIN). In another example, the support layers 216, 246 are made of sapphire. In another example, the support layers 216, 246 are made of quartz. The support layers 216, 246 have a higher thermal conductivity than the material of the piezoelectric layers 212, 242.

In one example, the functional layers 214, 244 are temperature compensation layers. In another example, the functional layers 214, 244 are dielectric layers.

The frame 270 can be made of a thermally conductive material. In one example, the frame 270 can be made of a metal, such as copper, tin, gold, etc. Other suitable thermally conductive materials (metal and non-metal) can also be used for the frame 270. The frame 270, when made of metal, can be connected to a ground of the packaged acoustic wave component 200.

The frame 270 can in one implementation extend along the periphery of the first and second acoustic wave resonators or devices or dies 210, 240 to seal or encapsulate the air cavity between the first and second acoustic wave resonators or devices or dies 210, 240. As shown in FIG. 3, the frame 270 extends between (e.g., is in thermal communication with, in thermal contact with, in direct contact with) and interconnects the first and second acoustic wave devices 210, 240 (e.g., interconnects the piezoelectric layers 212, 242 of the first and second acoustic wave devices 210, 240). The frame 270 supports the first acoustic wave device 210 on the second acoustic wave device 240. The frame 270 thermally communicates the first acoustic wave device 210 with the second acoustic wave device 240. In one example, a width of the frame 270 can be increased, which can increase the amount of heat the frame 270 transfers from the first acoustic wave device 210 to the second acoustic wave device 240. Additionally, the vias 222 can thermally communicate the first acoustic wave device 210 with the second acoustic wave device 240.

The first acoustic wave device 210 and second acoustic wave device 240 can electrically communicate via the vias 222. Said electrical communication can be directed to electrodes 256 via the vias 254, and onto a printed circuit board (PCB) on which the packaged acoustic wave component 200 is mounted.

As shown in FIG. 4, heat generated by the IDT electrode 218 of the first acoustic wave resonator or device or die 210 is directed to the frame 270, as shown by arrows C1, to transfer said heat to the second acoustic wave resonator or device or die 240. Such heat transfer to the frame 270 is facilitated by the high thermal conductivity of the support layer or substrate 216 of the first acoustic wave device 210. Additionally, though not shown, heat from the first acoustic wave device 210 can also be transferred by the vias 222 to the second acoustic wave device 240. Heat generated by the IDT electrode 248 of the second acoustic wave device 240 and heat received from the first acoustic wave device 210 (e.g., via the frame 270), shown by arrows C2, is dissipated from the second acoustic wave device 240 by the vias 254, which transfer said heat to the electrodes 256 and to the printed circuit board (PCB) on which the packaged acoustic wave component 200 is mounted.

FIGS. 5-6 shows another embodiment of a packaged acoustic wave component 200′. Some of the features of the packaged acoustic wave component 200′ are similar to features of the package acoustic wave component 200 in FIGS. 3-4. Thus, references numerals used to designate the various components of the packaged acoustic wave component 200′ are identical to those used for identifying the corresponding components of the packaged acoustic wave component 200 in FIGS. 3-4. Therefore, the structure and description for the various features of the packaged acoustic wave component 200 in FIGS. 3-4 are understood to also apply to the corresponding features of the packaged acoustic wave component 200′ in FIGS. 5-6, except as described below.

The packaged acoustic wave component 200′ differs from the packaged acoustic wave component 200 in that the functional layer 214′, 244′ and the piezoelectric layer 212′, 242′ are not coextensive with (e.g., extends across a smaller area, extends along a shorter length) than the support layer 216′, 246′. As shown in FIGS. 5-6, in one example the functional layer 214′, 244′ is coextensive with (e.g., extends across a same area as, extends along the same length as) the piezoelectric layer 212′, 242′. Additionally, the frame 270′ extends between (e.g., is in thermal communication with, in thermal contact with, in direct contact with) and interconnects the first and second acoustic wave devices 210′, 240′ (e.g., interconnects the support layer or substrate 216′, 246′ of the first and second acoustic wave devices 210′, 240′). In one example, a gap G is defined between the frame 270′ and the ends of the functional layer 214′, 244′ and the piezoelectric layer 212′, 242′ (e.g., to inhibit direct contact between the frame 270 and the functional layer 214′, 244′, and the piezoelectric layer 212′, 242′).

With reference to FIG. 6, heat generated by the IDT electrode 218′ of the first acoustic wave resonator or device or die 210′ is directed to the frame 270′, as shown by arrows C1′, to transfer said heat to the second acoustic wave resonator or device or die 240′. Such heat transfer to the frame 270′ is facilitated by the high thermal conductivity of the support layer or substrate 216′ of the first acoustic wave device 210′. Additionally, though not shown, heat from the first acoustic wave device 210′ can also be transferred by the vias 222′ to the second acoustic wave device 240′. Heat generated by the IDT electrode 248′ of the second acoustic wave device 240′ and heat received from the first acoustic wave device 210′ (e.g., via the frame 270′), shown by arrows C2′, is dissipated from the second acoustic wave device 240′ by the vias 254′, which transfer said heat to the electrodes 256′ and to the printed circuit board (PCB) on which the packaged acoustic wave component 200′ is mounted.

FIGS. 7A-7B show illustrations of thermal testing of the packaged surface acoustic wave component 200, which show that the temperature of the first acoustic wave device 210 of the packaged acoustic wave component 200 does not exceed 40 degrees Celsius during use. In some examples, the first (top) acoustic wave device 210 of the packaged acoustic wave component 200 achieves an top average temperature of approximately 30 degrees Celsius. Accordingly, the packaged acoustic wave component 200 advantageously remains under 100 degrees Celsius during use, allowing the packaged acoustic wave component 200 to avoid cracks or breaks in the first acoustic wave device 210.

Advantageously, the MPS structure of the packaged acoustic wave component 200, 200′ allows for the reduction in temperature of the first acoustic wave device 210, 210′ during operation, thereby reducing the mechanical stress they first (or top) acoustic wave device 210, 210′ is subjected to and avoid cracks or breaks therein, resulting in improved mechanical ruggedness of the acoustic wave devices and MPS structure. Such temperature performance advantageously allows use of the first acoustic wave resonator or device 210, 210′ for high power applications (e.g., in a high power transmit filter), while allowing for a size reduction in the packaged acoustic wave component 200, 200′. Additionally, the improved thermal performance (e.g., improved heat dissipation) of the packaged acoustic wave component 200, 200′ due to the improved thermal performance of the first (or top) acoustic wave device 210, 210′ allows for a reduction in the die area because filters can be arranged closer together.

The packaged acoustic wave component 200, 200′ can be formed by forming or providing the second acoustic wave device 240, 240′, forming or providing and bonding the frame 270, 270′ and vias 222, 222′ to the second acoustic wave device 240, 240′, forming or providing the first acoustic wave device 210, 210′ and boding the first acoustic wave device 210, 210′ to the frame 270, 270′ and vias 222, 222′.

The first acoustic wave device 210, 210′ can optionally be formed by forming or providing the support layer or substrate 216, 216′, forming or providing and bonding the functional layer 214, 214′ onto the support layer or substrate 216, 216′, forming or providing and bonding the piezoelectric layer 212, 212′ onto the functional layer 214, 214′, and forming or providing and bonding the IDT electrode 218, 218′ onto the piezoelectric layer 212, 212′. The second acoustic wave device 240, 240′ can optionally be formed by forming or providing the support layer or substrate 246, 246′, forming or providing and bonding the functional layer 244, 244′ onto the support layer or substrate 246, 246′, forming or providing and bonding the piezoelectric layer 242, 242′ onto the functional layer 244, 244′, forming the vias 254, 254′ through the piezoelectric layer 242, 242′, the functional layer 244, 244′, and the support layer 246, 246′, forming or providing electrodes 256, 256′ and connecting them to the vias 254, 254′, and forming or providing and bonding the IDT electrode 248, 248′ onto the piezoelectric layer 242, 242′.

The manufacturing process includes bonding the frame 270, 270′ to the first acoustic wave device 210, 210′ and second acoustic wave device 240, 240′. In one implementation, prior to bonding the frame 270, 270′ to the first acoustic wave device 210, 210′ and second acoustic wave device 240, 240′, a portion of the piezoelectric layers 212, 212′, 242, 242′ and/or a portion of the functional layers 214, 214′, 244, 244′ are removed so that the frame 270, 270′ can interconnect (e.g., contact) with the support layers 216, 216′, 246, 246′. In one implementation, such portions can be removed after the IDT electrodes 218, 218′, 248, 248′ are formed or provided over the piezoelectric layers 212, 212′, 242, 242′. In one example, such portions of the piezoelectric layers 212, 212′, 242, 242′ and/or the functional layers 214, 214′, 244, 244′ can be removed via an etching process.

FIGS. 8A-8B shows another embodiment of a packaged acoustic wave component 200″. Some of the features of the packaged acoustic wave component 200″ are similar to features of the package acoustic wave component 200 and 200′ in FIGS. 3-6. Thus, references numerals used to designate the various components of the packaged acoustic wave component 200″ are identical to those used for identifying the corresponding components of the packaged acoustic wave component 200 and 200′ in FIGS. 3-6, except that a “″” had been added to the numerical identifier. Therefore, the structure and description for the various features of the packaged acoustic wave component 200 and 200′ in FIGS. 3-6 are understood to also apply to the corresponding features of the packaged acoustic wave component 200″ in FIGS. 8A-8B, except as described below.

The packaged acoustic wave component 200″ differs from the packaged acoustic wave component 200′ in that the functional layer 214″, 244″ and the piezoelectric layer 212″, 242″ are not coextensive with (e.g., extends across a smaller area, extends along a shorter length) than the support layer 216″, 246″. As shown in FIGS. 8A-8B, in one example the functional layer 214″, 244″ is longer than the piezoelectric layer 212″, 242″. Additionally, the frame 270″ (or seal ring) extends between (e.g., is in thermal communication with, in thermal contact with, in direct contact with) and interconnects the first and second acoustic wave devices 210″, 240″ (e.g., interconnects the support layer or substrate 216″, 246″ of the first and second acoustic wave devices 210″, 240″), so that there is no functional layer 214″, 244″ or piezoelectric layer 212″, 242″ between the frame 270″ (or seal ring) and the support layer or substrate 216″, 246″ (e.g., the frame 270″ is spaced, for example outward, from ends of the piezoelectric layers 212″, 242″). Additionally, the vias 222″ extend between the metal layers 220″, 250″ that are coupled to the IDT electrodes 218″, 248″ of the first and second acoustic wave resonators or devices or dies 210″, 240″. The metal layers 220″, 250″ are disposed between the vias 222″ and the support layer or substrate 216″, 246″), so that there is no functional layer 214″, 244″ or piezoelectric layer 212″, 242″ between the vias 222″ and the support layer or substrate 216″, 246″ (e.g., the vias 222″ are spaced, for example outward, from ends of the piezoelectric layers 212″, 242″). Further, through silicon vias (TSV) 254″ that extend through the support layer or substrate 246″ to external electrodes 256″ are in contact with (e.g., direct contact with) the metal layers 220″, 250″, so that there is no functional layer 214″, 244″ or piezoelectric layer 212″, 242″ between the TSVs 254″ and the metal layers 220″, 250″ (e.g., the TSVs 254″ are spaced, for example outward, from ends of the piezoelectric layers 212″, 242″). Advantageously, this inhibits stresses (e.g., thermal stresses, mechanical stresses), for example from heat flowing through the TSVs 254″ from damaging (e.g., cracking, breaking) the piezoelectric layer 212″, 242″, thereby improving the reliability of the packaged acoustic wave component 200″.

With reference to FIG. 8B, heat generated by the IDT electrode 218″ of the first acoustic wave resonator or device or die 210″ is directed to the frame 270″ (e.g., seal ring), as shown by arrows C1″, to transfer said heat to the second acoustic wave resonator or device or die 240″. Such heat transfer to the frame 270″ is facilitated by the high thermal conductivity of the support layer or substrate 216″ of the first acoustic wave device 210″. Additionally, though not shown, heat from the first acoustic wave device 210″ can also be transferred by the vias 222″ to the second acoustic wave device 240″. Heat generated by the IDT electrode 248″ of the second acoustic wave device 240″ and heat received from the first acoustic wave device 210″ (e.g., via the frame 270″), shown by arrows C2″, is dissipated from the second acoustic wave device 240″ by the vias 254″ (e.g. TSVs), which transfer said heat to the electrodes 256″ and to the printed circuit board (PCB) on which the packaged acoustic wave component 200″ is mounted.

Advantageously, the MPS structure of the packaged acoustic wave component 200″ allows for the reduction in temperature of the first acoustic wave device 210″ during operation, thereby reducing the mechanical stress they first (or top) acoustic wave device 210″ is subjected to and avoid cracks or breaks therein, resulting in improved mechanical ruggedness of the acoustic wave devices and MPS structure. Such temperature performance advantageously allows use of the first acoustic wave resonator or device 210″ for high power applications (e.g., in a high power transmit filter), while allowing for a size reduction in the packaged acoustic wave component 200″. Additionally, the improved thermal performance (e.g., improved heat dissipation) of the packaged acoustic wave component 200″ due to the improved thermal performance of the first (or top) acoustic wave device 210″ allows for a reduction in the die area because filters can be arranged closer together.

The packaged acoustic wave component 200″ can be formed by forming or providing the second acoustic wave device 240″, forming or providing and bonding the frame 270″ (or seal ring) and vias 222″ to the second acoustic wave device 240″, forming or providing the first acoustic wave device 210″ and boding the first acoustic wave device 210″ to the frame 270″ and vias 222″.

The first acoustic wave device 210″ can optionally be formed by forming or providing the support layer or substrate 216″, forming or providing and bonding the functional layer 214″ onto the support layer or substrate 216″, forming or providing and bonding the piezoelectric layer 212″ onto the functional layer 214″, and forming or providing and bonding the IDT electrode 218″ onto the piezoelectric layer 212″. The second acoustic wave device 240″ can optionally be formed by forming or providing the support layer or substrate 246″, forming or providing and bonding the functional layer 244″ onto the support layer or substrate 246″, forming or providing and bonding the piezoelectric layer 242″ onto the functional layer 244″, forming the vias 254″ through the piezoelectric layer 242″, the functional layer 244″, and the support layer 246″, forming or providing electrodes 256″ and connecting them to the vias 254″, and forming or providing and bonding the IDT electrode 248″ onto the piezoelectric layer 242″.

The manufacturing process includes bonding the frame 270″ to the first acoustic wave device 210″ and second acoustic wave device 240″. In one implementation, prior to bonding the frame 270″ to the first acoustic wave device 210″ and second acoustic wave device 240″, a portion of the piezoelectric layers 212″, 242″ and/or a portion of the functional layers 214″, 244″ are removed so that the frame 270″ (e.g., seal ring) can interconnect (e.g., directly contact) with the support layers 216″, 246″. In one implementation, such portions can be removed after the IDT electrodes 218″, 248″ are formed or provided over the piezoelectric layers 212″, 242″. In one example, such portions of the piezoelectric layers 212″, 242″ and/or the functional layers 214″, 244″ can be removed via an etching process.

An MPS acoustic wave resonator or device or die in a packaged acoustic wave component, including any suitable combination of features disclosed herein, can be included in a filter arranged to filter a radio frequency signal in a fifth generation (5G) New Radio (NR) operating band within Frequency Range 1 (FR1). A filter arranged to filter a radio frequency signal in a 5G NR operating band can include one or more MPS acoustic wave resonators disclosed herein. FR1 can be from 410 MHz to 7.125 GHz, for example, as specified in a current 5G NR specification. In 5G applications, the thermal dissipation of the MPS acoustic wave resonators disclosed herein can be advantageous. For example, such thermal dissipation can be desirable in 5G applications with a higher time-division duplexing (TDD) duty cycle compared to fourth generation (4G) Long Term Evolution (LTE). One or more MPS acoustic wave resonators in accordance with any suitable principles and advantages disclosed herein can be included in a filter arranged to filter a radio frequency signal in a 4G LTE operating band and/or in a filter having a passband that includes a 4G LTE operating band and a 5G NR operating band.

FIG. 9A is a schematic diagram of an example transmit filter 100 that includes surface acoustic wave resonators according to an embodiment. The transmit filter 100 can be a band pass filter. The illustrated transmit filter 100 is arranged to filter a radio frequency signal received at a transmit port TX and provide a filtered output signal to an antenna port ANT. Some or all of the SAW resonators TS1 to TS7 and/or TP1 to TP5 can be a SAW resonator in accordance with any suitable principles and advantages disclosed herein. For instance, one or more of the SAW resonators of the transmit filter 100 can be an acoustic wave device 210, 210′, 210″ of a packaged acoustic wave components 200, 200′, 200″ of FIGS. 3-6, 8A-8B. Alternatively or additionally, one or more of the SAW resonators of the transmit filter 100 can be any surface acoustic wave resonator disclosed herein. Any suitable number of series SAW resonators and shunt SAW resonators can be included in a transmit filter 100.

FIG. 9B is a schematic diagram of a receive filter 105 that includes surface acoustic wave resonators according to an embodiment. The receive filter 105 can be a band pass filter. The illustrated receive filter 105 is arranged to filter a radio frequency signal received at an antenna port ANT and provide a filtered output signal to a receive port RX. Some or all of the SAW resonators RS1 to RS8 and/or RP1 to RP6 can be SAW resonators in accordance with any suitable principles and advantages disclosed herein. For instance, one or more of the SAW resonators of the receive filter 105 can be an acoustic wave device 210, 210′ of a packaged acoustic wave components 200, 200′, 200″ of FIGS. 3-6, 8A-8B. Alternatively or additionally, one or more of the SAW resonators of the receive filter 105 can be any surface acoustic wave resonator disclosed herein. Any suitable number of series SAW resonators and shunt SAW resonators can be included in a receive filter 105.

Although FIGS. 9A and 9B illustrate example ladder filter topologies, any suitable filter topology can include a SAW resonator in accordance with any suitable principles and advantages disclosed herein. Example filter topologies include ladder topology, a lattice topology, a hybrid ladder and lattice topology, a multi-mode SAW filter, a multi-mode SAW filter combined with one or more other SAW resonators, and the like.

FIG. 10 is a schematic diagram of a radio frequency module 175 that includes a surface acoustic wave component 176 according to an embodiment. The illustrated radio frequency module 175 includes the SAW component 176 and other circuitry 177. The SAW component 176 can include one or more SAW resonators with any suitable combination of features of the SAW resonators disclosed herein. The SAW component 176 can include a SAW die that includes SAW resonators.

The SAW component 176 shown in FIG. 9 includes a filter 178 and terminals 179A and 179B. The filter 178 includes SAW resonators. One or more of the SAW resonators can be implemented in accordance with any suitable principles and advantages of the acoustic wave devices 210, 210′, 210″ of the packaged acoustic wave components 200, 200′, 200″ of FIGS. 3-6, 8A-8B and/or any surface acoustic wave resonator disclosed herein. The terminals 179A and 178B can serve, for example, as an input contact and an output contact. The SAW component 176 and the other circuitry 177 are on a common packaging substrate 180 in FIG. 10. The package substrate 180 can be a laminate substrate. The terminals 179A and 179B can be electrically connected to contacts 181A and 181B, respectively, on the packaging substrate 180 by way of electrical connectors 182A and 182B, respectively. The electrical connectors 182A and 182B can be bumps or wire bonds, for example. The other circuitry 177 can include any suitable additional circuitry. For example, the other circuitry can include one or more one or more power amplifiers, one or more radio frequency switches, one or more additional filters, one or more low noise amplifiers, the like, or any suitable combination thereof. The radio frequency module 175 can include one or more packaging structures to, for example, provide protection and/or facilitate easier handling of the radio frequency module 175. Such a packaging structure can include an overmold structure formed over the packaging substrate 180. The overmold structure can encapsulate some or all of the components of the radio frequency module 175.

FIG. 11 is a schematic diagram of a radio frequency module 184 that includes a surface acoustic wave resonator according to an embodiment. As illustrated, the radio frequency module 184 includes duplexers 185A to 185N that include respective transmit filters 186A1 to 186N1 and respective receive filters 186A2 to 186N2, a power amplifier 187, a select switch 188, and an antenna switch 189. In some instances, the module 184 can include one or more low noise amplifiers configured to receive a signal from one or more receive filters of the receive filters 186A2 to 186N2. The radio frequency module 184 can include a package that encloses the illustrated elements. The illustrated elements can be disposed on a common packaging substrate 180. The packaging substrate can be a laminate substrate, for example.

The duplexers 185A to 185N can each include two acoustic wave filters coupled to a common node. The two acoustic wave filters can be a transmit filter and a receive filter. As illustrated, the transmit filter and the receive filter can each be band pass filters arranged to filter a radio frequency signal. One or more of the transmit filters 186A1 to 186N1 can include one or more SAW resonators in accordance with any suitable principles and advantages disclosed herein. Similarly, one or more of the receive filters 186A2 to 186N2 can include one or more SAW resonators in accordance with any suitable principles and advantages disclosed herein. Although FIG. 11 illustrates duplexers, any suitable principles and advantages disclosed herein can be implemented in other multiplexers (e.g., quadplexers, hexaplexers, octoplexers, etc.) and/or in switch-plexers and/or to standalone filters.

The power amplifier 187 can amplify a radio frequency signal. The illustrated switch 188 is a multi-throw radio frequency switch. The switch 188 can electrically couple an output of the power amplifier 187 to a selected transmit filter of the transmit filters 186A1 to 186N1. In some instances, the switch 188 can electrically connect the output of the power amplifier 187 to more than one of the transmit filters 186A1 to 186N1. The antenna switch 189 can selectively couple a signal from one or more of the duplexers 185A to 185N to an antenna port ANT. The duplexers 185A to 185N can be associated with different frequency bands and/or different modes of operation (e.g., different power modes, different signaling modes, etc.).

FIG. 12 is a schematic block diagram of a module 190 that includes duplexers 191A to 191N and an antenna switch 192. One or more filters of the duplexers 191A to 191N can include any suitable number of surface acoustic wave resonators in accordance with any suitable principles and advantages discussed herein. Any suitable number of duplexers 191A to 191N can be implemented. The antenna switch 192 can have a number of throws corresponding to the number of duplexers 191A to 191N. The antenna switch 192 can electrically couple a selected duplexer to an antenna port of the module 190.

FIG. 13A is a schematic block diagram of a module 410 that includes a power amplifier 412, a radio frequency switch 414, and duplexers 191A to 191N in accordance with one or more embodiments. The power amplifier 412 can amplify a radio frequency signal. The radio frequency switch 414 can be a multi-throw radio frequency switch. The radio frequency switch 414 can electrically couple an output of the power amplifier 412 to a selected transmit filter of the duplexers 191A to 191N. One or more filters of the duplexers 191A to 191N can include any suitable number of surface acoustic wave resonators in accordance with any suitable principles and advantages discussed herein. Any suitable number of duplexers 191A to 191N can be implemented.

FIG. 13B is a schematic block diagram of a module 415 that includes filters 416A to 416N, a radio frequency switch 417, and a low noise amplifier 418 according to an embodiment. One or more filters of the filters 416A to 416N can include any suitable number of acoustic wave resonators in accordance with any suitable principles and advantages disclosed herein. Any suitable number of filters 416A to 416N can be implemented. The illustrated filters 416A to 416N are receive filters. In some embodiments (not illustrated), one or more of the filters 416A to 416N can be included in a multiplexer that also includes a transmit filter. The radio frequency switch 417 can be a multi-throw radio frequency switch. The radio frequency switch 417 can electrically couple an output of a selected filter of filters