Renesas Electronics introduces low-low, ultra miniature power MOSFETs

Renesas Electronics Corporation announced the availability of eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets. Featuring low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultra compact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors. The new µPA2600 and µPA2601 MOSFETs reduce mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and overcurrent cutoff switches in RF power amplifiers (amplifiers for high-frequency signals).